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This book examines some of the charge carrier transport issues encountered in the field of modern semiconductor devices and novel materials. Theoretical approaches to the understanding and modeling of the relevant physical phenomena, seen in devices that have very small spatial dimensions and that operate under high electric field strength, are described in papers written by leading experts and pioneers in this field. In addition, the book examines the transport physics encountered in novel materials such as wide band gap semiconductors (GaN, SiC, etc.) as well as organic semiconductors. Topics in High Field Transport in Semiconductors provides a comprehensive overview that will be beneficial to newcomers as well as engineers and researchers engaged in this exciting field.
The information revolution would have been radically different, or impossible, without the use of the materials known generically as semiconductors. The properties of these materials, particularly the potential for doping with impurities to create transistors and diodes and controlling the local potential by gates, are essential for microelectronics. Semiconductor Transport is an introductory text on electron transport in semiconductor materials and is written for advanced undergraduates and graduate students. The book provides a thorough treatment of modern approaches to the transport properties of semiconductors and their calculation. It also introduces those aspects of solid state physics, which are vitally important for understanding transport in them.
The state-of-the-art of quantum transport and quantum kinetics in semiconductors, plus the latest applications, are covered in this monograph. Since the publishing of the first edition in 1996, the nonequilibrium Green function technique has been applied to a large number of new research topics, and the revised edition introduces the reader to many of these areas. This book is both a reference work for researchers and a self-tutorial for graduate students.
This review volume is based primarily on the balance equation approach developed since 1984. It provides a simple and analytical description about hot electron transport, particularly, in semiconductors with higher carrier density where the carrier-carrier collision is much stronger than the single particle scattering. The steady state and time-dependent hot electron transport, thermal noise, hot phonon effect, the memory effect, and other related subjects of charge carriers under strong electric fields are reviewed. The application of Zubarev's nonequilibrium statistical operator to hot electron transport and its equivalence to the balance equation method are also presented. For semiconductors with very low carrier density, the problem can be regarded as a single carrier transport which will be treated non-perturbatively by the nonequilibrium Green's function technique and the path integral theory. The last part of this book consists of a chapter on the dynamic conductivity and the shot noise suppression of a double-carrier resonant tunneling system.
This book presents in summary the state of our knowledge of oxide reliability. The articles have been written by experts who are among the most knowledgeable in the field. The book will be an invaluable aid to reliability engineers and manufacturing engineers, helping them to produce and characterize reliable oxides. It can be used as an introduction for new engineers interested in oxide reliability, besides being a reference for engineers already engaged in the field.
The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials known presently are analyzed in detail and exciting new fields of research in this direction are discussed.
The 2002 Workshop on Frontiers in Electronics was the third in the series of WOFE workshops. Over 70 leading experts from academia, industry, and government agencies reported on the most recent developments in their fields and exchanged views on future trends and directions of the electronics and photonics industry. The issues they addressed ranged from system-on-chip to DNA doping, from ultrathin SOI to electrotextiles, from photonics integration on the ULSI platform to wide band gap semiconductor devices and solid state lighting. The rapid pace of electronic technology evolution compels a merger of different technical areas, and WOFE-02 provided a unique opportunity for cross-fertilization of the emerging fields of microelectronics, photonics, and nanoelectronics. The workshop was informal and stimulated provocative views, visionary outlooks, and discussions on controversial issues.
Novel heterostructure devices. Electron-phonon interactions in intersubband laser heterostructures / M.V. Kisin, M. Dutta, and M.A. Stroscio -- Quantum dot infrared detectors and sources / P. Bhattacharya ... [et al.] -- Generation of terahertz emission based on intersubband transitions / Q. Hu -- Mid-infrared GaSb-based lasers with Type-I heterointerfaces / D.V. Donetsky, R.U. Martinelli, and G.L. Belenky -- Advances in quantum-dot research and technology: the path to applications in biology / M.A. Stroscio and M. Dutta -- Potential device applications and basic properties. High-field electron transport controlled by optical phonon emission in nitrides / S.M. Komirenko ... [et al.] -- Cooling by inverse Nottingham effect with resonant tunneling / Y. Yu, R.F. Greene, and R. Tsu -- The physics of single electron transistors / M.A. Kastner -- Carrier capture and transport within tunnel injection lasers: a quantum transport analysis / L.F. Register ... [et al.] -- The influence of environmental effects on the acoustic phonon spectra in quantum-dot heterostructures / S. Rufo, M. Dutta, and M.A. Stroscio -- Quantum devices with multipole-electrode - heterojunctions hybrid structures / R. Tsu.
The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.
The last research frontier in high frequency electronics now lies in the so-called THz (or submillimeter-wave) regime between the traditional microwave and infrared domains. Significant scientific and technical challenges within the terahertz (THz) frequency regime have recently motivated an array of new research activities. During the last few years, major research programs have emerged that are focused on advancing the state of the art in THz frequency electronic technology and on investigating novel applications of THz frequency sensing. This book serves as a detailed reference for the new THz frequency technological advances that are emerging across a wide spectrum of sensing and technology areas. Contents: THz Technology: An Overview (P H Siegel); Two-Terminal Active Devices for Terahertz Sources (G I Haddad et al.); Multiplier and Harmonic Generator Technologies for Terahertz Applications (R M Weikle II et al.); Submicron InP-Based HBTs for Ultra-High Frequency Amplifiers (M Urteaga et al.); THz Generation by Photomixing in Ultrafast Photoconductors (E R Brown); Silicon-Germanium Quantum-Cascade Lasers (R W Kelsall & R A Soref); Plasma Wave Electronics (M S Shur & V Ryzhii); T-Ray Sensing and Imaging (S P Mickan & X-C Zhang); Multistatic Reflection Imaging with Terahertz Pulses (T D Dorney et al.). Readership: Undergraduates, graduate students, academics and researchers in electrical & electronic engineering.