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The past three decades have been a period where useful current and voltage instabilities in solids have progressed from exciting research problems to a wide variety of commercially available devices. Materials and electronics research has led to devices such as the tunnel (Esaki) diode, transferred electron (Gunn) diode, avalanche diodes, real-space transfer devices, and the like. These structures have proven to be very important in the generation, amplification, switching, and processing of microwave signals up to frequencies exceeding 100 GHz. In this treatise we focus on a detailed theoretical understanding of devices of the kind that can be made unstable against circuit oscillations, large amplitude switching events, and in some cases, internal rearrangement of the electric field or current density distribution. The book is aimed at the semiconductor device physicist, engineer, and graduate student. A knowledge of solid state physics on an elementary or introductory level is assumed. Furthermore, we have geared the book to device engineers and physicists desirous of obtaining an understanding substantially deeper than that associated with a small signal equivalent circuit approach. We focus on both analytical and numerical treatment of specific device problems, concerning ourselves with the mechanism that determines the constitutive relation governing the device, the boundary conditions (contact effects), and the effect of the local circuit environment.
This volume contains the notes of lectures given at the school on "Nonlinear Dy namics in Solids" held at the Physikzentrum Bad Honnef, 2-6 October 1989 under the patronage of the Deutsche Physikalische Gesellschaft. Nonlinear dynamics has become a highly active research area, owing to many interesting developments during the last three decades in the theoretical analysis of dynamical processes in both Hamiltonian and dissipative systems. Research has been focused on a variety of problems, such as the characteristics of regular and chaotic motion in Hamiltonian dynamics, the problem of quantum chaos, the forma tion and properties of solitary spatio-temporal structures, the occurrence of strange attractors in dissipative systems, and the bifurcation scenarios leading to complex time behaviour. Until recently, predictions of the theory have been tested predominantly on insta bilities in hydrodynamic systems, where many interesting experiments have provided valuable input and have led to a fruitful interaction between experiment and theory. Fluid systems are certainly good candidates for performing clean experiments free from disturbing influences: with fluids, compared to solids, it is simpler to prepare good samples, the relevant length and time scales are in easily accessible ranges, and it is possible to do measurements "inside" the fluid, because it can be filled in after the construction of the apparatus. Further, the theory describing the macroscopic dynamics of fluids is well established and contains only very few parameters, all of which have well-known values.
In 438 alphabetically-arranged essays, this work provides a useful overview of the core mathematical background for nonlinear science, as well as its applications to key problems in ecology and biological systems, chemical reaction-diffusion problems, geophysics, economics, electrical and mechanical oscillations in engineering systems, lasers and nonlinear optics, fluid mechanics and turbulence, and condensed matter physics, among others.
Semiconductors can exhibit electrical instabilities like current runaway, threshold switching, current filamentation, or oscillations, when they are driven far from thermodynamic equilibrium. This book presents a coherent theoretical des- cription of such cooperative phenomena induced by generation and recombination processes of charge carriers in semicon- ductors.
This book brings together concepts from semiconductor physics, nonlinear-dynamics and chaos to examine semiconductor transport phenomena.
Gallium Arsenide and Related Compounds 1993 covers III-V compounds from crystal growth of materials to their device applications. Focusing on the fields of optical communications and satellite broadcasting, the book describes the practical applications for GaAs and III-V compounds in devices and circuits, both conventional and those based on quantum effects. It also discusses ultrafast GaAs transistors and integrated circuits, novel laser diodes, and tunneling devices, and considers the direction for future technologies. In addition, this volume addresses the increasing demands of ultra high speed systems that require careful selection of III-V materials to optimize the performance of electronic and optoelectronic components. It is ideal reading for physicists, materials scientists, electrical, and electronics engineers investigating III-V compound materials, properties, and devices.
This monograph is devoted to an entirely new branch of nonlinear physics - solitary intrinsic states, or autosolitons, which form in a broad class of physical, chemical and biological dissipative systems. Autosolitons are often observed as highly nonequilibrium regions in slightly nonequilibrium systems, in many ways resembling ball lightning which occurs in the atmosphere. We develop a new approach to problems of self-organization and turbulence, treating these phenomena as a result of spontaneous formation and subsequent evolution of autosolitons. Scenarios of self-organization involve sophisticated interactions between autosolitons, whereas turbulence is regarded as a pattern of autosolitons which appear and disappear at random in different parts of the system. This monograph is the first attempt to provide a comprehensive summary of the theory of autosolitons as developed by the authors over the years of research. The monograph is comprised of three more or less autonomous parts. Part I deals with the physical nature and experimental studies of autosolitons and self organization in various physical systems: semiconductor and gas plasma, heated gas mixture, semiconductor structures, composite superconductors, optical and magnetic media, systems with uniformly generated combustion matter, distributed gas-discharge and electronic systems. We discuss feasibility of autosolitons in the form of highly nonequilibrium regions in slightly nonequilibrium gases and semiconductors, "hot" and "cold" regions in semiconductor and gas plasmas, static, pulsating and traveling combustion fronts.
This volume contains invited and contributed papers of the Ninth International Conference on Hot Carriers in Semiconductors (HCIS-9), held July 3 I-August 4, 1995 in Chicago, Illinois. In all, the conference featured 15 invited oral presentations, 60 contributed oral presentations, and 105 poster presentations, and an international contingent of 170 scientists. As in recent conferences, the main themes of the conference were related to nonlinear transport in semiconductor heterojunctions and included Bloch oscillations, laser diode structures, and femtosecond spectroscopy. Interesting questions related to nonlinear transport, size quantization, and intersubband scattering were addressed that are relevant to the new quantum cascade laser. Many lectures were geared toward quantum wires and dots and toward nanostructures and mesoscopic systems in general. It is expected that such research will open new horizons to nonlinear transport studies. An attempt was made by the program committee to increase the number of presen tations related directly to devices. The richness of nonlocal hot electron effects that were discussed as a result, in our opinion, suggests that future conferences should further encourage reports on such device research. On behalf of the Program and International Advisory Committees, we thank the participants, who made the conference a successful and pleasant experience, and the support of the Army Research Office, the Office of Naval Research, and the Beckman Institute of the University of Illinois at Urbana-Champaign. We are also indebted to Mrs. Sara Starkey and Mrs.