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A handbook of data on the elastic properties of single crystals collected from the literature through mid-1970.
Data on the elastic properties of single crystals have been collected from the literature published through mid-1964. The elastic properties of isotropic aggregates (Young's modulus, Poisson's ratio, shear modulus, bulk modulus, compressibility, velocity of shear waves, and the velocity of compressional waves) are calculated according to the schemes of Voigt and Reuss. The tables include about 1100 determinations. (Author).
Solid State Physics
This three-volume handbook provides reliable, comprehensive data on the properties of rocks, minerals, and other related materials. The format is largely tabular and graphical, designed for ease of use in comparisons and referencing. The chapters are contributed by recognized experts from leading university, industrial, and governmental scientific establishments.
Extensively revised and updated, this new edition of a classic text presents a unified approach to crystallography and to the defects found within crystals. The book combines the classical and exact description of symmetry of a perfect crystal with the possible geometries of the major defects-dislocations, stacking faults, point defects, twins, interfaces and the effects of martensitic transformations. A number of important concepts and exciting new topics have been introduced in this second edition, including piezoelectricity, liquid crystals, nanocrystalline concepts, incommensurate materials and the structure of foamed and amorphous solids. The coverage of quasicrystalline materials has been extended, and the data tables, appendices and references have been fully updated. Reinforcing its unrivalled position as the core text for teaching crystallography and crystal defects, each chapter includes problem sets with brief numerical solutions at the end of the book. Detailed worked solutions, supplementary lecture material and computer programs for crystallographic calculations are provided online (http://booksupport.wiley.com).
In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.