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Research objectives were the theoretical investigation of single- electron tunneling phenomena in semiconductor heterostructures, and their application possibilities in the development of ultradense logic and memory circuits. Report period objectives: (1) To design and model simple digital circuits based on capacitively coupled single-electron transistors; and (2) To extend the orthodox theory of correlated single-electron tunneling to ultrasmall quantum dots.
This book provides a review of research on single-electron devices and circuits in silicon. It considers the design, fabrication, and characterization of single-electron transistors, single-electron memory devices, few-electron transfer devices such as electron pumps and turnstiles, and single-electron logic devices. In all cases, a review of various device designs is provided, and in many cases, the devices developed during the author's own research work are used as detailed examples. An introduction to the physics of the single-electron charging effects is also provided.
This book reviews research on single-electron devices and circuits in silicon. These devices provide a means to control electronic charge at the one-electron level and are promising systems for the development of few-electron, nanoscale electronic circuits. The book considers the design, fabrication, and characterization of single-electron transistors, single-electron memories, few-electron transfer devices such as electron pumps and turnstiles, and single-electron logic devices. A review of the many different approaches used for the experimental realisation of these devices is provided and devices developed during the author''s own research are used as detailed examples. An introduction to the physics of single-electron charging effects is included. Sample Chapter(s). Chapter 1: Introduction (301 KB). Contents: Introduction; Single-Electron Charging Effects; Single-Electron Transistors in Silicon; Single-Electron Memory; Few-Electron Transfer Devices; Single-Electron Logic Circuits. Readership: Researchers, academics, and postgraduate students in nanoelectronics, nanofabrication, nanomaterials and nanostructures, quantum physics and electrical & electronic engineering.
CD-ROM contains SET analytical model MIB coded in C++, MATLAB, and Verilog-A language, allowing user to cosimulate and codesign hybrid CMOS-SET circuits. Numerous circuit examples are also provided.
The electronic circuit is a proud child of twentieth century natural science. In a hundred short years it has developed to the point that it now enhances nearly every aspect of human life. Yet our basic understanding of electronic-circuit operation, electronic -circuittheory, has not made significant progress during the semiconductor industry's explosive growth from 1950s to the present. This is because the electronic circuit has never been considered to be a challenging research subject by physi cists. Linear passive circuit theory was established by the late 1940s. After the advent of the semiconductor electron devices, the interest of the technical community shifted away from circuit theory. Twenty years later, when integrated circuit technology began an explosive growth, cir cuit theory was again left behind in the shadow of rapidly progressing computer-aided design (CAD) technology. The present majority view is that electronic-circuit theory stands in a subordinate position to CAD and to device-processing technology. In 1950s and 1960s, several new semiconductor devices were invented every year, and each new device seemed to have some interesting funda mental physical mechanisms that appeared worth investigating. Com pared to attractive device physics, the problems of the semiconductor device circuit appeared less sophisticated and less attractive. Bright minds of the time drifted away from circuit theory to electron-device physics. After thirty years only one type of semiconductor device, the electron triode with several variations survived, whereas hundreds of them went into oblivion.
Device and Circuit Cryogenic Operation for Low Temperature Electronics is a first in reviewing the performance and physical mechanisms of advanced devices and circuits at cryogenic temperatures that can be used for many applications. The first two chapters cover bulk silicon and SOI MOSFETs. The electronic transport in the inversion layer, the influence of impurity freeze-out, the special electrical properties of SOI structures, the device reliability and the interest of a low temperature operation for the ultimate integration of silicon down to nanometer dimensions are described. The next two chapters deal with Silicon-Germanium and III-V Heterojunction Bipolar Transistors, as well as III-V High Electron Mobility Transistors (HEMT). The basic physics of the SiGe HBT and its unique cryogenic capabilities, the optimization of such bipolar devices, and the performance of SiGe HBT BiCMOS technology at liquid nitrogen temperature are examined. The physical effects in III-V semiconductors at low temperature, the HEMT and HBT static, high frequency and noise properties, and the comparison of various cooled III-V devices are also addressed. The next chapter treats quantum effect devices made of silicon materials. The major quantum effects at low temperature, quantum wires, quantum dots as well as single electron devices and applications are investigated. The last chapter overviews the performances of cryogenic circuits and their applications. The low temperature properties and performance of inverters, multipliers, adders, operational amplifiers, memories, microprocessors, imaging devices, circuits and systems, sensors and read-out circuits are analyzed. Device and Circuit Cryogenic Operation for Low Temperature Electronics is useful for researchers, engineers, Ph.D. and M.S. students working in the field of advanced electron devices and circuits, new semiconductor materials, and low temperature electronics and physics.
Today, the concepts of single-electron tunneling (SET) are used to understand and model single-atom and single-molecule nanoelectronics. The characteristics of nanoelectronic devices, especially SET transistors, can be understood on the basis of the physics of nanoelectronic devices and circuit models. A circuit theory approach is necessary for considering possible integration with current microelectronic circuitry. To explain the properties and possibilities of SET devices, this book follows an approach to modeling these devices using electronic circuit theory. All models and equivalent circuits are derived from the first principles of circuit theory. Based on energy conservation, the circuit model of SET is an impulsive current source, and modeling distinguishes between bounded and unbounded currents. The Coulomb blockade is explained as a property of a single junction. In addition, this edition differs from the previous one by elaborating on the section on spice simulations and providing a spice simulation on the SET electron box circuit, including the spice netlist. Also, a complete, new proof of the two-capacitor problem in circuit theory is presented; the importance of this proof in understanding energy conservation in SET circuits cannot be underestimated. This book will be very useful for advanced undergraduate- and graduate-level students of electrical engineering and nanoelectronics and researchers in nanotechnology, nanoelectronic device physics, and computer science. Only book modeling both single-electron tunneling and many electron tunneling from the points of view of electronics; starting from experiments, via a physics description, working towards a circuit description; and based on energy conservation, in electrical circuits, developing the impulse circuit model for single-electron tunneling.
This is perhaps the most comprehensive undergraduate textbook on the fundamental aspects of solid state electronics. It presents basic and state-of-the-art topics on materials physics, device physics, and basic circuit building blocks not covered by existing textbooks on the subject. Each topic is introduced with a historical background and motivations of device invention and circuit evolution. Fundamental physics is rigorously discussed with minimum need of tedious algebra and advanced mathematics. Another special feature is a systematic classification of fundamental mechanisms not found even in advanced texts. It bridges the gap between solid state device physics covered here with what students have learnt in their first two years of study.Used very successfully in a one-semester introductory core course for electrical and other engineering, materials science and physics junior students, the second part of each chapter is also used in an advanced undergraduate course on solid state devices. The inclusion of previously unavailable analyses of the basic transistor digital circuit building blocks and cells makes this an excellent reference for engineers to look up fundamental concepts and data, design formulae, and latest devices such as the GeSi heterostructure bipolar transistors.
"Take advantage of the low-power consumption and enhanced functionality of SETs (single electron transistors) along with the high-speed driving and voltage gain of CMSO technology. This cutting-edge resource provides you with the conceptual framework for CMSO-SET hybrid circuit design. Supported with over 180 illustrations and packaged with a CD-ROM of practical supplementary material, the book explains spice simulation of SETs and co-simulation with CMOS, introduces specific design strategies for hybrid CMOS-SET circuits, and presents CMOS-SET co-fabrication techniques. You gain a thorough understanding of the pros and cons of digital SETs, learn how SETs can help to solve the intrinsic drawbacks of CMOS technology, and discover how the hybridization of both technologies can produce new analog functionalities which are difficult to achieve in a pure CMOS approach. From the basic physics of single electron transistors and SET modeling, to advanced concepts like CMSO-SET co-integration, the book helps you realize significant performance benefits by showing you how to incorporate SET technology into your design projects."--Publisher's website.
This book, now in its Second Edition, provides a basis for understanding the characteristics, working principle, operation and limitations of semi-conductor devices. In this new edition, many sections are re-written to present the concepts related to device physics in more clearer and easy to understand manner. The primary objective of this textbook is to provide all the relevant topics on the semiconductor materials and semiconductor devices in a single volume. It includes enough mathematical expressions to provide a good foundation for the basic understanding of the semiconductor devices. It covers not only the state-of-the-art devices but also future approaches that go beyond the current technology. Designed primarily as a text for the postgraduate students of physics and electronics, the book would also be useful for the undergraduate students of electronics and electrical engineering, and electronics and communi-cation engineering. Highlights of the Book : Includes topics on the latest technologies Covers important points in each chapter Provides a number of solved and unsolved problems along with explanation type questions Emphasizes on the mathematical derivation