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The self-assembled nanostructured materials described in this book offer a number of advantages over conventional material technologies in a wide range of sectors. World leaders in the field of self-organisation of nanostructures review the current status of research and development in the field, and give an account of the formation, properties, and self-organisation of semiconductor nanostructures. Chapters on structural, electronic and optical properties, and devices based on self-organised nanostructures are also included. Future research work on self-assembled nanostructures will connect diverse areas of material science, physics, chemistry, electronics and optoelectronics. This book will provide an excellent starting point for workers entering the field and a useful reference to the nanostructured materials research community. It will be useful to any scientist who is involved in nanotechnology and those wishing to gain a view of what is possible with modern fabrication technology. Mohamed Henini is a Professor of Applied Physics at the University of Nottingham. He has authored and co-authored over 750 papers in international journals and conference proceedings and is the founder of two international conferences. He is the Editor-in-Chief of Microelectronics Journal and has edited three previous Elsevier books. - Contributors are world leaders in the field - Brings together all the factors which are essential in self-organisation of quantum nanostructures - Reviews the current status of research and development in self-organised nanostructured materials - Provides a ready source of information on a wide range of topics - Useful to any scientist who is involved in nanotechnology - Excellent starting point for workers entering the field - Serves as an excellent reference manual
This volume looks at optical spectroscopy of semiconductir nanostructures. Some of the topics it covers include: kingdom of nanostructures; quantum confinement in low-dimensional systems; resonant light reflection; and transmission and absorption.
In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. - Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures - Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field - Each chapter starts with a didactic introduction on the technique - The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors
Semiconductor nanostructures are attracting a great deal of interest as the most promising device with which to implement quantum information processing and quantum computing. This book surveys the present status of nanofabrication techniques, near field spectroscopy and microscopy to assist the fabricated nanostructures. It will be essential reading for academic and industrial researchers in pure and applied physics, optics, semiconductors and microelectronics. - The first up-to-date review articles on various aspects on quantum coherence, correlation and decoherence in semiconductor nanostructures
Ultrafast spectroscopy of semiconductors and semiconductor nanostructures is currently one of the most exciting areas of research in condensed-matter physics. Remarkable recent progress in the generation of tunable femtosecond pulses has allowed direct investigation of the most fundamental dynamical processes in semiconductors. This second edition presents the most striking recent advances in the techniques of ultrashort pulse generation and ultrafast spectroscopy; it discusses the physics of relaxation, tunneling and transport dynamics in semiconductors and semiconductor nanostructures following excitation by femtosecond laser pulses.
Examines the optical properties of low-dimensional semiconductor structures, a hot research area - for graduate students and researchers.
Reducing the size of a coherently grown semiconductor cluster in all three directions of space to a value below the de Broglie wavelength of a charge carrier leads to complete quantization of the energy levels, density of states, etc. Such “quantum dots” are more similar to giant atoms in a dielectric cage than to classical solids or semiconductors showing a dispersion of energy as a function of wavevector. Their electronic and optical properties depend strongly on their size and shape, i.e. on their geometry. By designing the geometry by controlling the growth of QDs, absolutely novel possibilities for material design leading to novel devices are opened. This multiauthor book written by world-wide recognized leaders of their particular fields and edited by the recipient of the Max-Born Award and Medal 2006 Professor Dieter Bimberg reports on the state of the art of the growing of quantum dots, the theory of self-organised growth, the theory of electronic and excitonic states, optical properties and transport in a variety of materials. It covers the subject from the early work beginning of the 1990s up to 2006. The topics addressed in the book are the focus of research in all leading semiconductor and optoelectronic device laboratories of the world.
Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Annotation Tiny structures measurable on the nanometer scale (one-billionth of a meter) are known as nanostructures, and nanotechnology is the emerging application of these nanostructures into useful nanoscale devices. As we enter the 21st century, more and more professional are using nanotechnology to create semiconductors for a variety of applications, including communications, information technology, medical, and transportation devices. Written by today's best researchers of semiconductor nanostructures, this cutting-edge resource provides a snapshot of this exciting and fast-changing field. The book covers the latest advances in nanotechnology and discusses the applications of nanostructures to optoelectronics, photonics, and electronics.
The International Workshop on "Intersubband Transitions in Quantum Wells:: Physics and Applications," was held at National Cheng Kung University, in Tainan, Taiwan, December 15-18, 1997. The objective of the Workshop is to facilitate the presentation and discussion of the recent results in theoretical, experimental, and applied aspects of intersubband transitions in quantum wells and dots. The program followed the tradition initiated at the 1991 conference in Cargese-France, the 1993 conference in Whistler, B. C. Canada, and the 1995 conference in Kibbutz Ginosar, Israel. Intersubband transitions in quantum wells and quantum dots have attracted considerable attention in recent years, mainly due to the promise of various applications in the mid- and far-infrared regions (2-30 J. lm). Over 40 invited and contributed papers were presented in this four-day workshop, with topics covered most aspects of the intersubband transition phenomena including: the basic intersubband transition processes, multiquantum well infrared photodetector (QWIP) physics, large format (640x480) GaAs QWIP (with 9. 0 J. lffi cutoff) focal plane arrays (FPAs) for IR imaging camera applications, infrared modulation, intersubband emission including mid- and long- wavelength quantum cascade (QC) lasers such as short (A. "" 3. 4 J. lm) and long (A. "" 11. 5 J. lm) wavelength room temperature QC lasers, quantum fountain intersubband laser at 15. 5 J. lm wavelength in GaAs/AIGaAs quantum well, harmonic generation and nonlinear effects, ultra-fast phenomena such as terahertz (THz) intersubband emission and detection. The book divides into five Chapters.