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Transient radiation effects was investigated on bipolar and MOS MSI/LSI devices as well as basic thin-film devices. The transient susceptibility of the junction-isolated bipolar and MOS devices was due primarily to the substrate junction photocurrent. Transient failure levels were generally in the range of 10 to the 8th power to 10 to the 9th power rads(Si)/s for the bipolar devices, and on the order of 1-10 rads(Si) for the dose-dependent MOS devices. Failure level of the hardened bipolar MSI device was approximately 3 x 10 to the 8th power rads(Si)/s. No electrical performance degradation, latch-up or burn-out was observed on any device through exposure to a narrow-pulse 10 to the 11th power rads(Si)/s (2900 rads(Si)) ionizing radiation environment. (Author).
This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level.
Ionizing Radiation Effects in Electronics: From Memories to Imagers delivers comprehensive coverage of the effects of ionizing radiation on state-of-the-art semiconductor devices. The book also offers valuable insight into modern radiation-hardening techniques. The text begins by providing important background information on radiation effects, their underlying mechanisms, and the use of Monte Carlo techniques to simulate radiation transport and the effects of radiation on electronics. The book then: Explains the effects of radiation on digital commercial devices, including microprocessors and volatile and nonvolatile memories—static random-access memories (SRAMs), dynamic random-access memories (DRAMs), and Flash memories Examines issues like soft errors, total dose, and displacement damage, together with hardening-by-design solutions for digital circuits, field-programmable gate arrays (FPGAs), and mixed-analog circuits Explores the effects of radiation on fiber optics and imager devices such as complementary metal-oxide-semiconductor (CMOS) sensors and charge-coupled devices (CCDs) Featuring real-world examples, case studies, extensive references, and contributions from leading experts in industry and academia, Ionizing Radiation Effects in Electronics: From Memories to Imagers is suitable both for newcomers who want to become familiar with radiation effects and for radiation experts who are looking for more advanced material or to make effective use of beam time.
This book provides readers with invaluable overviews and updates of the most important topics in the radiation-effects field, enabling them to face significant challenges in the quest for the insertion of ever-higher density and higher performance electronic components in satellite systems. Readers will benefit from the up-to-date coverage of the various primary (classical) sub-areas of radiation effects, including the space and terrestrial radiation environments, basic mechanisms of total ionizing dose, digital and analog single-event transients, basic mechanisms of single-event effects, system-level SEE analysis, device-level, circuit-level and system-level hardening approaches, and radiation hardness assurance. Additionally, this book includes in-depth discussions of several newer areas of investigation, and current challenges to the radiation effects community, such as radiation hardening by design, the use of Commercial-Off-The-Shelf (COTS) components in space missions, CubeSats and SmallSats, the use of recent generation FPGA’s in space, and new approaches for radiation testing and validation. The authors provide essential background and fundamentals, in addition to information on the most recent advances and challenges in the sub-areas of radiation effects. Provides a concise introduction to the fundamentals of radiation effects, latest research results, and new test methods and procedures; Discusses the radiation effects and mitigation solutions for advanced integrated circuits and systems designed to operate in harsh radiation environments; Includes coverage of the impact of Small Satellites in the space industry.
Space applications, nuclear physics, military operations, medical imaging, and especially electronics (modern silicon processing) are obvious fields in which radiation damage can have serious consequences, i.e., degradation of MOS devices and circuits. Zeroing in on vital aspects of this broad and complex topic, Radiation Effects in Semiconductors addresses the ever-growing need for a clear understanding of radiation effects on semiconductor devices and circuits to combat potential damage it can cause. Features a chapter authored by renowned radiation authority Lawrence T. Clark on Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation This book analyzes the radiation problem, focusing on the most important aspects required for comprehending the degrading effects observed in semiconductor devices, circuits, and systems when they are irradiated. It explores how radiation interacts with solid materials, providing a detailed analysis of three ways this occurs: Photoelectric effect, Compton effect, and creation of electron-positron pairs. The author explains that the probability of these three effects occurring depends on the energy of the incident photon and the atomic number of the target. The book also discusses the effects that photons can have on matter—in terms of ionization effects and nuclear displacement Written for post-graduate researchers, semiconductor engineers, and nuclear and space engineers with some electronics background, this carefully constructed reference explains how ionizing radiation is creating damage in semiconducting devices and circuits and systems—and how that damage can be avoided in areas such as military/space missions, nuclear applications, plasma damage, and X-ray-based techniques. It features top-notch international experts in industry and academia who address emerging detector technologies, circuit design techniques, new materials, and innovative system approaches.
This volume provides an extensive overview of radiation effects on integrated circuits, offering major guidelines for coping with radiation effects on components. It contains a set of chapters based on the tutorials presented at the International School on Effects of Radiation on Embedded Systems for Space Applications (SERESSA) that was held in Manaus, Brazil, November 20-25, 2005.
This summary tabulates nuclear radiation effects data on large scale integrated (LSI) circuits. It is intended to be a handy reference to help engineers select components for systems that must survive a given radiation level or evaluate the radiation hardness of previously designed systems. Most of the data in this report were compiled from papers presented at the Annual IEEE Conference on Nuclear and Space Radiation Effects (1971 through 1979). The remainder came from a variety of government and industry reports. Due to the complexity of testing procedures of LSI devices and the space constraints of a tabular format, not all pertinent data can be presented in this summary. We have attempted to give most of the data needed for assessing the hardness of a given component. The balance of the information can be found in the references.