Download Free Polycrystalline Semiconductors Book in PDF and EPUB Free Download. You can read online Polycrystalline Semiconductors and write the review.

This book summarizes the most recent aspects of polycrystalline semiconductors as presented at the conference Polycrystalline Semiconductors - Grain Boundaries and Interfaces. It contains 12 review articles on selected topics written by experts in their fields and 41 complementary contributed papers. The structure, chemistry and physics of grain boundaries and other interfaces are experimentally and theoretically studied. Aspects of the technologically important polycrystalline silicon are discussed in detail. Also covered are other polycrystalline semiconductors, germanium and compound semiconductors, that are currently of interest in fundamental research and in the technology of solar cells and thin film devices. Anyone interested in polycrystalline semiconductors will be able to use this comprehensive collection to advantage. It also suggests directions for new research and development.
In terms of structure, the field of semiconductors spans a wide range, from the perfect order of single crystals to the non-periodic, disordered amorph ous state. The two extremes of this range attract a large amount of inter est. On one side, glamorous novel phenomena are being found which can only occur in specially tailored ultra-perfect periodic lattices. On the other side, the exotic and challenging nature of the amorphous state has triggered a surge of activity in recent years. Po1ycrystall i ne semi conductors are in between. They are among the work horses in the field, useful in many applications, a handy solution to many practical problems and still - they have not received in the past the amount of research interest that they deserve. It is the aim of the present book to improve this situation. The book originated from the lectures and seminars presented at the course on "Po1ycrystall i ne Semi conductors - Physical Properties and Applications" of "the International School on Materials Scien ce and Technology, hel d at the Centre for Sci entifi c Culture "Ettore Majorana" in Erice, Italy, July 1-15, 1984.
Physics, Chemistry and Technology Proceedings of the 4th International Conference on Polycrystalline Semiconductors - Physics, Chemistry and Technology (POLYSE '95), Gargnano, Italy, September, 1995
This book comprises the over 100 contributions that were presented at the International Conference on Polycrystalline Semiconductors which took place from September 10 to 13, 2002, in Nara, Japan.
This book comprises the contributions to the sixth conference on polycrystalline semiconductors (POLYSE). The conference covered many aspects of polycrystalline semiconductors, but was more applications-oriented than on previous occasions; thereby reflecting the rapid evolution of these technologies. POLYSE 2000 brought together research specialists from basic research, as well as from research & development engineering, all of whom are working on devices such as thin-film transistors, micro-electromechanical systems, or sensors and actuators. In particular, ten internationally recognized scientists (J. Morante, S.Périchon, M. Konagai, S. Wagner, R. Hagenbeck, D.A. Bonnell, G. Horowitz, T.Fuyuki, J. Kocka and V. Chuwere) were invited to review their work on several interesting and promising aspects of the subject: such as, micro-systems, solar cells, thin-film transistors, organic polycrystalline devices and polycrystalline ceramics.
The book provides an overview of the fascinating spectrum of semiconductor physics, devices and applications, presented from a historical perspective. It covers the development of the subject from its inception in the early nineteenth century to the recent millennium. Written in a lively, informal style, it emphasizes the interaction between pure scientific push and commercial pull, on the one hand, and between basic physics, materials, and devices, on the other. It also sets the various device developments in the context of systems requirements and explains how such developments met wide ranging consumer demands. It is written so as to appeal to students at all levels in physics, electrical engineering, and materials science, to teachers, lecturers, and professionals working in the field, as well as to a non-specialist scientific readership.
This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field. These volumes include sections on basic materials and substrates properties, fundamental device physics, critical fabrication processes (structures, a-Si: H, dielectric, metallization, catalytic CVD), and existing and new applications. The chapters are written by leading researchers who have extensive experience with reputed track records. Thin Film Transistors provides practical information on preparing individual functional a-Si: H TFTs and poly-Si TFTs as well as large-area TFT arrays. Also covered are basic theories on the a-Si: H TFT operations and unique material characteristics. Readers are also exposed to a wide range of existing and new applications in industries.
Contributed papers of the workshop held at IIT, Madras, in 2003.
A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Hydrogen on semiconductor surfaces has been an area of considerable activity over the last two decades. Structural, thermal, and dynamical properties of hydrogen chemisorbed on crystalline silicon and other semiconductors have been studied in great detail. These properties serve as a reference for related, but more complex systems such as hydrogen at multiple vacancies in crystalline semiconductors or at microvoids in amorphous samples. Interesting from a surface physics point of view is the fact that hydrogen as a monovalent element is an ideal terminator for unsaturated bonds on surfaces and therefore tends to have a large influence on surface reconstruction. A related phenomenon with large technological impact (for example in low cost solar cells) is the passivation of grain boundaries in microcrystalline semiconductors. Finally, hydrogenated semiconductor surfaces always appear as a boundary layer during low-energy hydrogenation of bulk semiconductors, so that a complete description of hydrogen uptake or desorption necessarily has to take these surfaces into account. This collection of invited and contributed papers has been carefully balanced to deal with amorphous and crystalline semiconductors and surfaces and presents basic and experimental work (basic and applied) as well as theory. The resulting volume presents a summary of the state-of-the-art in the field of hydrogen in semiconductors and will hopefully stimulate future work in this area.