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In the 50 years since the invention of transistor, silicon integrated circuit (IC) technology has made astonishing advances. A key factor that makes these advances possible is the ability to have precise control on material properties and physical dimensions. The introduction of plasma processing in pattern transfer and in thin film deposition is a critical enabling advance among other things. In state of the art silicon Ie manufacturing process, plasma is used in more than 20 different critical steps. Plasma is sometimes called the fourth state of matter (other than gas, liquid and solid). It is a mixture of ions (positive and negative), electrons and neutrals in a quasi-neutral gaseous steady state very far from equilibrium, sustained by an energy source that balances the loss of charged particles. It is a very harsh environment for the delicate ICs. Highly energetic particles such as ions, electrons and photons bombard the surface of the wafer continuously. These bombardments can cause all kinds of damage to the silicon devices that make up the integrated circuits.
Proven processes for ensuring semiconductor device reliability Co-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide. Coverage includes: Basic device physics Process flow for MOS manufacturing Measurements useful for device reliability characterization Hot carrier injection Gate-oxide integrity (GOI) and time-dependent dielectric breakdown (TDDB) Negative bias temperature instability Plasma-induced damage Electrostatic discharge protection of integrated circuits Electromigration Stress migration Intermetal dielectric breakdown
These proceedings highlight the fundamental researches and up-to-data developments on energy conversion and high-voltage application by means of low temperature and atmospheric pressure plasma. In recent years, plasma-assisted energy conversion gains increasing attention as an alternative to thermal-catalysis or electro-catalysis. These proceedings discuss and exchange cutting-edge scientific innovations and technological advances in fields like plasma-enabled synthesis of chemicals and fuels, plasma-enabled the environmental clean-up, plasma-enabled catalysis treatment, in-situ probing of plasma-catalyst interactions and its high-voltage applications, which show great potentials in industrial demands like CO2 hydrogenation, CH4 reforming and nitrogen fixation, plasma deposition, chemical synthesis, VOC abatement and high-voltage insulation. This collection of papers presents the main applications of plasma-induced energy conversion and high-voltage discharge in the form of separate chapters, including cutting-edge studies on conversion technology, complex mechanism simulation, in-situ detection and converged applications by artificial intelligence. These proceedings are suitable for researchers engaged in fields like plasma-catalysis, discharge diagnosis and modelling, chemical modelling and high-voltage applications. The major topics covered in the conference proceedings are: 1) Advanced plasma-catalysis conversion technology; 2) Advanced in-situ discharge diagnosis technology; 3) Advanced in-situ plasma-catalysis characterization; 4) Multi-scale or innovative modelling technology; 5) High-voltage discharge and application.
This book provides for the first time a good understanding of the etching profile technologies that do not disturb the plasma. Three types of sensors are introduced: on-wafer UV sensors, on-wafer charge-up sensors and on-wafer sheath-shape sensors in the plasma processing and prediction system of real etching profiles based on monitoring data. Readers are made familiar with these sensors, which can measure real plasma process surface conditions such as defect generations due to UV-irradiation, ion flight direction due to charge-up voltage in high-aspect ratio structures and ion sheath conditions at the plasma/surface interface. The plasma etching profile realistically predicted by a computer simulation based on output data from these sensors is described.