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This is the first of two books presenting the challenges and future prospects of plasma etching processes for microelectronics, reviewing the past, present and future issues of etching processes in order to improve the understanding of these issues through innovative solutions.This book focuses on back end of line (BEOL) for high performance device realization and presents an overview of all etch challenges for interconnect realization as well as the current etch solutions proposed in the semiconductor industry. The choice of copper/low-k interconnect architecture is one of the keys for integrated circuit performance, process manufacturability and scalability. Today, implementation of porous low-k material is mandatory in order to minimize signal propagation delay in interconnections. In this context, the traditional plasma process issues (plasma-induced damage, dimension and profile control, selectivity) and new emerging challenges (residue formation, dielectric wiggling) are critical points of research in order to control the reliability and reduce defects in interconnects. These issues and potential solutions are illustrated by the authors through different process architectures available in the semiconductor industry (metallic or organic hard mask strategies). - Presents the difficulties encountered for interconnect realization in very large-scale integrated (VLSI) circuits - Focused on plasma-dielectric surface interaction - Helps you further reduce the dielectric constant for the future technological nodes
Low-energy electrons are ubiquitous in nature and play an important role in natural phenomena as well as many potential and current industrial processes. Authored by 16 active researchers, this book describes the fundamental characteristics of low-energy electron–molecule interactions and their role in different fields of science and technology, including plasma processing, nanotechnology, and health care, as well as astro- and atmospheric physics and chemistry. The book is packed with illustrative examples, from both fundamental and application sides, features about 130 figures, and lists over 800 references. It may serve as an advanced graduate-level study course material where selected chapters can be used either individually or in combination as a basis to highlight and study specific aspects of low-energy electron–molecule interactions. It is also directed at researchers in the fields of plasma physics, nanotechnology, and radiation damage to biologically relevant material (such as in cancer therapy), especially those with an interest in high-energy-radiation-induced processes, from both an experimental and a theoretical point of view.
A comprehensive and up-to-date text in the field of electron scattering and ionization, covering fundamentals, experimental background, quantum scattering theories and applications. Electron impact ionization of atoms and molecules in ground/metastable states is discussed comprehensively. The text covers electron scattering phenomena for diatomic and common molecules, polyatomic molecules and radicals including hydro-carbons, fluoro-carbons and other larger molecules together with relevant radical species in detail. Applications of electron impact ionization and excitation in gaseous or plasma and condensed matter is discussed in a separate chapter. Recent advances in the field of electron molecule scattering and ionization for polyatomic molecules is covered extensively.
Advances in Atomic, Molecular, and Optical Physics, Volume 66 provides a comprehensive compilation of recent developments in a field that is in a state of rapid growth. New to this volume are chapters devoted to 2D Coherent Spectroscopy of Electronic Transitions, Nonlinear and Quantum Optical Properties and Applications of Intense Twin-Beams, Non-classical Light Generation from III-V and Group-IV Solid-State Cavity Quantum Systems, Trapping Atoms with Radio Frequency Adiabatic Potentials, Quantum Control of Optomechanical Systems, and Efficient Description of Bose–Einstein Condensates in Time-Dependent Rotating Traps. With timely articles written by distinguished experts that contain relevant review materials and detailed descriptions of important developments in the field, this series is a must have for those interested in the variety of topics covered. - Presents the work of international experts in the field - Contains comprehensive articles that compile recent developments in a field that is experiencing rapid growth, with new experimental and theoretical techniques emerging - Ideal for users interested in optics, excitons, plasmas, and thermodynamics - Topics covered include atmospheric science, astrophysics, surface physics, and laser physics, amongst others
This book has been written as part of a series of scientific books being published by Plenum Press. The scope of the series is to review a chosen topic in each volume. To supplement this information, the abstracts to the most important references cited in the text are reprinted, thus allowing the reader to find in-depth material without having to refer to many additional publications. This volume is dedicated to the field of dry (plasma) etching, as applied in silicon semiconductor processing. Although a number of books have appeared dealing with this area of physics and chemistry, these all deal with parts of the field. This book is unique in that it gives a compact, yet complete, in-depth overview of fundamentals, systems, processes, tools, and applications of etching with gas plasmas for VLSI. Examples are given throughout the fundamental sections, in order to give the reader a better insight in the meaning and magnitude of the many parameters relevant to dry etching. Electrical engineering concepts are emphasized to explain the pros and cons of reactor concepts and excitation frequency ranges. In the description of practical applications, extensive use is made of cross-referencing between processes and materials, as well as theory and practice. It is thus intended to provide a total model for understanding dry etching. The book has been written such that no previous knowledge of the subject is required. It is intended as a review of all aspects of dry etching for silicon semiconductor processing.