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Silicon technology today forms the basis of a world-wide, multi-billion dollar component industry. The reason for this expansion can be found not only in the physical properties of silicon but also in the unique properties of the silicon-silicon dioxide interface. However, silicon devices are still subject to undesired electrical phenomena called "instabilities". These are due mostly to the imperfect nature of the insulators used, to the not-so-perfect silicon-insulator interface and to the generation of defects and ionization phenomena caused by radiation. The problem of instabilities is addressed in this volume, the third of this book series. Vol.3 updates and supplements the material presented in the previous two volumes, and devotes five chapters to the problems of radiation-matter and radiation-device interactions. The volume will aid circuit manufacturers and circuit users alike to relate unstable electrical parameters and characteristics to the presence of physical defects and impurities or to the radiation environment which caused them.
This volume addresses the fundamentals of planning, designing, fabricating, testing and operating space systems. It is intended as an engineering reference and as a textbook for an advanced undergraduate or graduate level course.
Trapping, pseudo-trapping, and nontrapping regions within an observed magnetospheric configuration are described. Time averages proton and electron distributions and available data concerning the alpha particle distribution within the trapping and pseudo-trapping regions are presented. A review of the observational evidence leading to the identification of major sources, losses, and transport of magnetospherically trapped particles is given. Conclusions are summarized and additional suggestions offered in these areas for inner and outer zone protons and electrons. One general result of this review is that much is now known of source, loss, and transport processes, although specific experiments and calculations must still be done. It is shown that the inclusion of pitch angle diffusion processes within the magnetosphere significantly alters the concept of a stable trapping and allows a consistent quiescent description of outer zone electrons to be formulated from energies of a few tens of kilovolts to several Mev.
This report describes a radio investigation of traveling ionospheric disturbances carried out near Boulder, Colorado, over a 1-year period from June 1967 to June 1968. The three-dimensional motions of F2 layer disturbances were measured by the high frequency Doppler technique with spaced transmitters and at several probing frequencies. Horizontal motions were determined by cross-correlating three signals on frequencies near 5 MHz, whose reflection points were approximately at the corners of a horizontal equilateral triangle with 40-km sides. Vertical motions were determined from cross-correlation of signals on frequencies of 3.3, 4.0, and 5.1 MHz, whose reflection points were aligned vertically.