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The tremendous impact of electronic devices on our lives is the result of continuous improvements of the billions of nanoelectronic components inside integrated circuits (ICs). However, ultra-scaled semiconductor devices require nanometer control of the many parameters essential for their fabrication. Through the years, this created a strong alliance between microscopy techniques and IC manufacturing. This book reviews the latest progress in IC devices, with emphasis on the impact of electrical atomic force microscopy (AFM) techniques for their development. The operation principles of many techniques are introduced, and the associated metrology challenges described. Blending the expertise of industrial specialists and academic researchers, the chapters are dedicated to various AFM methods and their impact on the development of emerging nanoelectronic devices. The goal is to introduce the major electrical AFM methods, following the journey that has seen our lives changed by the advent of ubiquitous nanoelectronics devices, and has extended our capability to sense matter on a scale previously inaccessible.
Today, the availability of bright and highly coherent electron sources and sensitive detectors has radically changed the type and quality of the information which can be obtained by transmission electron microscopy (TEM). TEMs are now present in large numbers not only in academia, but also in industrial research centers and fabs. This book presents in a simple and practical way the new quantitative techniques based on TEM which have recently been invented or developed to address most of the main challenging issues scientists and process engineers have to face to develop or optimize semiconductor layers and devices. Several of these techniques are based on electron holography; others take advantage of the possibility of focusing intense beams within nanoprobes. Strain measurements and mappings, dopant activation and segregation, interfacial reactions at the nanoscale, defect identification and specimen preparation by FIB are among the topics presented in this book. After a brief presentation of the underlying theory, each technique is illustrated through examples from the lab or fab.
Includes bibliographical references and index.
The Electronic Device Failure Analysis Society proudly announces the Seventh Edition of the Microelectronics Failure Analysis Desk Reference, published by ASM International. The new edition will help engineers improve their ability to verify, isolate, uncover, and identify the root cause of failures. Prepared by a team of experts, this updated reference offers the latest information on advanced failure analysis tools and techniques, illustrated with numerous real-life examples. This book is geared to practicing engineers and for studies in the major area of power plant engineering. For non-metallurgists, a chapter has been devoted to the basics of material science, metallurgy of steels, heat treatment, and structure-property correlation. A chapter on materials for boiler tubes covers composition and application of different grades of steels and high temperature alloys currently in use as boiler tubes and future materials to be used in supercritical, ultra-supercritical and advanced ultra-supercritical thermal power plants. A comprehensive discussion on different mechanisms of boiler tube failure is the heart of the book. Additional chapters detailing the role of advanced material characterization techniques in failure investigation and the role of water chemistry in tube failures are key contributions to the book.
More than 1,100 TEM images illustrate the science of ULSI The natural outgrowth of VLSI (Very Large Scale Integration), Ultra Large Scale Integration (ULSI) refers to semiconductor chips with more than 10 million devices per chip. Written by three renowned pioneers in their field, ULSI Semiconductor Technology Atlas uses examples and TEM (Transmission Electron Microscopy) micrographs to explain and illustrate ULSI process technologies and their associated problems. The first book available on the subject to be illustrated using TEM images, ULSI Semiconductor Technology Atlas is logically divided into four parts: * Part I includes basic introductions to the ULSI process, device construction analysis, and TEM sample preparation * Part II focuses on key ULSI modules--ion implantation and defects, dielectrics and isolation structures, silicides/salicides, and metallization * Part III examines integrated devices, including complete planar DRAM, stacked cell DRAM, and trench cell DRAM, as well as SRAM as examples for process integration and development * Part IV emphasizes special applications, including TEM in advanced failure analysis, TEM in advanced packaging development and UBM (Under Bump Metallization) studies, and high-resolution TEM in microelectronics This innovative guide also provides engineers and managers in the microelectronics industry, as well as graduate students, with: * More than 1,100 TEM images to illustrate the science of ULSI * A historical introduction to the technology as well as coverage of the evolution of basic ULSI process problems and issues * Discussion of TEM in other advanced microelectronics devices and materials, such as flash memories, SOI, SiGe devices, MEMS, and CD-ROMs
Most of the books on infrared characterization are for applications in chemistry and no book has been dedicated to infrared characterization for microelectronics. The focus of the book will be on practical applications useful to the production line and to the research and development of microelectronics. The background knowledge and significance of doing a particular type of infrared measurement will be discussed in detail. The principal purpose of the book is to serve as a useful handbook for practising engineers and scientists in the field of microelectronics.
With IC technology continuing to advance, the analysis of very small structures remains critically important. Microscopy of Semiconducting Materials provides an overview of advances in semiconductor studies using microscopy. The book explores the use of transmission and scanning electron microscopy, ultrafine electron probes, and EELS to investigate semiconducting structures. It also covers specimen preparation using focused ion beam milling and advances in microscopy techniques using different types of scanning probes, such as AFM, STM, and SCM. In addition, the book discusses a range of materials, from finished devices to partly processed materials and structures, including nanoscale wires and dots. This volume provides an authoritative reference for all academics and researchers in materials science, electrical and electronic engineering and instrumentation, and condensed matter physics.
Micro/nanotribology as a field is concerned with experimental and theoretical investigations of processes ranging from atomic and molecular scales to the microscale, occurring during adhesion, friction, wear, and thin-film lubrication at sliding surfaces. As a field it is truly interdisciplinary, but this confronts the would-be entrant with the difficulty of becoming familiar with the basic theories and applications: the area is not covered in any undergraduate or graduate scientific curriculum. The present work commences with a history of tribology and micro/nanotribology, followed by discussions of instrumentation, basic theories of friction, wear and lubrication on nano- to microscales, and their industrial applications. A variety of research instruments are covered, including a variety of scanning probe microscopes and surface force apparatus. Experimental research and modelling are expertly dealt with, the emphasis throughout being applied aspects.