Download Free Metalorganic Molecular Beam Epitaxial Growth Of Indium Gallium Arsenide Indium Phosphide Heterostructures Book in PDF and EPUB Free Download. You can read online Metalorganic Molecular Beam Epitaxial Growth Of Indium Gallium Arsenide Indium Phosphide Heterostructures and write the review.

Metalorganic molecular beam epitaxy (MOMBE) offers several potential advantages over molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) for the development of high-speed/reliability C-doped In$\rm\sb{0.53}Ga\sb{0.47}$As/InP heterojunction bipolar transistors (HBTs). Improvements in reproducibility of alloy composition and layer thickness for $\rm In\sb xGa\sb{1-x}As$ and InP, which are afforded by MOMBE relative to MBE, offer clear advantages for manufacturing. The potential for reduction of the H passivation of C acceptors and substrate temperature sensitivity of the alloy composition, using CCl$\sb4$ as the C source, offers advantages relative to MOCVD. However, the lack of an efficient gaseous n-type dopant source limits the potential for scalability of MOMBE. This thesis describes recent work on the development of MOMBE for the growth of C-doped $\rm In\sb{0.53}Ga\sb{0.47}As/InP$ HBTs. Issues relevant to obtaining abrupt heterointerfaces, the development of a new gaseous Si dopant source, SiBr$\sb4$, and the sources of H passivation of C acceptors in C-doped $\rm In\sb{0.53}Ga\sb{0.47}As$ have been investigated. The use of a common Ta-baffled hydride cracker for the dissociation of AsH$\sb3$ and PH$\sb3$ at 950$\sp\circ$C was found to result in the generation of As$\sb2$, P$\sb2$, and H$\sb2$. However, severe group V memory effects were observed for P and As. Significantly faster switching was obtained, by using separate open Ta tube crackers. Single and multiple quantum well $\rm In\sb{0.53}Ga\sb{0.47}As/InP$ heterostructures containing quantum wells as narrow as 10 A exhibit intense photoluminescence and ninth order satellite peaks in resolution x-ray diffraction rocking curves. SiBr$\sb4$ has been demonstrated as an extremely efficient gaseous Si doping source which is compatible with MOMBE. Net electron concentrations of n = $\rm2.3\times10\sp{20}\ cm\sp{-3}$ have been obtained in InP grown at 450$\sp\circ$C without morphology degradation. Specific contact resistances of $\rm\rho\sb c=6\times10\sp{-8}\ \Omega$-cm$\sp{2}$ have been obtained by using nonalloyed Ti/Pt/Au contacts directly to these heavily-doped InP layers. $\rm In\sb{0.53}Ga\sb{0.47}As/InP$ HBTs using InP contact layers with comparably low specific contact resistances have been demonstrated. A blue shift in the photoluminescence peak energy of approximately 265 meV is observed for InP layers doped to n = $\rm7\times10\sp{19}\ cm\sp{-3}.$ Carbon doping of $\rm In\sb{0.53}Ga\sb{0.47}As$ in gas source molecular beam epitaxy and MOMBE using CCl$\sb4$ has been investigated. Net hole concentrations of p = $\rm1.8\times10\sp{20}\ cm\sp{-3}$ have been obtained with negligible H passivation for hole concentrations as high as p = $\rm8\times10\sp{19}\ cm\sp{-3}$. The degree of H passivation was found to be highly dependent on the AsH$\sb3$ cracking temperature with an enhanced effect at substrate temperatures ${
InGaP/GaAs system presents an attractive alternative to GaAs/AlGaAs system for heterojunction devices because of its unique heterojunction properties, wide band gap of about 1.90 eV for the lattice matched composition and absence of oxidation problems typical for AlGaAs. However, the growth of InGaP requires the use of phosphine, which necessitated the use of Gas Source Molecular Beam Epitaxy (GSMBE). The gases involved are very hazardous, extremely toxic, highly inflammable and explosive at elevated temperatures. Adequate care has been taken for the safe use of these gases so that this attractive technique is properly utilized. The GSMBE system is equipped with a central alarm command system with audio-visual alarms for a variety of monitored conditions and interlocks for automatic shutdown. Samples studied were grown on (100) GaAs substrates under various growth conditions. Reproducible growth conditions have been established with respect to optimisation of pressure and temperature so as to achieve good material properties. Structural characterization using X ray has been carried out for the determination of material composition and evaluation of crystal quality. Very narrow full width at half maxima values indicated good crystal quality. Additionally, cross-sectional TEM has shown smooth heterointerface. Subsequent to this, good hall mobility at room temperature and at 77K, confirmed the material quality. Photoluminescence has been utilized for the evaluation of the E$\sb0$ gap. The PL exhibited very narrow full width at half maxima for lattice matched composition. Apart from evaluation of the E$\sb1$ gap, spectroscopic ellipsometry has been used to investigate the compositional dependence of the E$\sb1$ gap (and its broadening). P-type modulation doped heterostructures has been implemented using InGaP/GaAs, demonstrating two dimensional hole gas (2DHG) with good p-type hole mobilities measured from room temperature up to very low temperatures. The approximate constant value of mobility in the low temperature region strongly confirms the presence of 2DHG. A simple model has been formulated for the estimation of valence band discontinuity from the measured 2DHG data at cryogenic temperatures. Heterostructure Bipolar Transistor has been demonstrated using InGaP/GaAs system with the realisation of good current gain and low offset voltages. The double heterostructure bipolar transistor showed even smaller offset voltages. The classical V$\sb{CE}$ versus I$\sb{c}$ plots and gummel plots for the devices shows an ideality factor close to unity for I$\sb{c}$ and other usual characteristic features.
even other mismatched substrates.