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Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. - Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices - Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more - Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face
The Chemistry of Titanium, Zirconium and Hafnium deals with the chemistry of titanium, zirconium, and hafnium and covers topics ranging from the occurrence and metallurgy of all three elements to their nuclear, physical, and chemical properties as well as analytical chemistry. The compounds of titanium, zirconium, and hafnium are also discussed. This volume is comprised of two chapters and opens with a historical overview and discovery of titanium, along with its occurrence and distribution, metallurgical aspects, and nuclear and physicochemical properties. The compounds of titanium are also considered, including alloys and complexes; hydrides and oxides; halides and oxyhalides; titanates and antimonides; and carbides and borides. The second chapter is devoted to zirconium and hafnium, their occurrence and metallurgy; and physical, chemical, and biological properties. Compounds of zirconium and hafnium are described, from alloys and hydrides to zirconates and hafnates; nitrides, phosphides, and arsenides; carbides, silicides, and germanides; molybdates, tungstates, halates, and perchlorates; alkoxides, mercaptides, and dithiocarbamates; and amides, alkylamides, triazenes, phthalocyanines, and bipyridyls. This book will be a valuable source of information for inorganic chemists.
This proceedings volume from the 1999 TMS Annual Meeting is intended to serve as a compendium on reactive metals. Specifically, this book concentrates on zirconium, hafnium, molybdenum, niobium, beryllium, and titanium. Covering different aspects of extraction and recovery, metal refining, processing, and current and potential applications of these metals, this volume serves as a valuable reference source on reactive metals.
Analysis of the New Metals.