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The scaling of device dimensions with a simultaneous increase in functional density has imposed tremendous challenges for materials, technology, integration and reliability of interconnects. To meet requirements of the ITRS roadmap, new materials are being introduced at a faster pace in all functions of multilevel interconnects. The issues addressed in this book cannot be dispelled as simply selecting a low-k material and integrating it into a copper damascene process. The intricacies of the back end for sub-100nm technology include novel processing of low-k materials, employing pore-sealing techniques and capping layers, introducing advanced dielectric and diffusion barriers, and developing novel integration schemes. This is in addition to concerns of performance, yield, and reliability appropriate to nanoscaled interconnects. Although many challenges continue to impede progress along the ITRS roadmap, the contributions in this book confront them head-on. It provides a scientific understanding of the issues and stimulate new approaches to advanced multilevel interconnects.
Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.
Retaining the comprehensive and in-depth approach that cemented the bestselling first edition's place as a standard reference in the field, the Handbook of Semiconductor Manufacturing Technology, Second Edition features new and updated material that keeps it at the vanguard of today's most dynamic and rapidly growing field. Iconic experts Robert Doering and Yoshio Nishi have again assembled a team of the world's leading specialists in every area of semiconductor manufacturing to provide the most reliable, authoritative, and industry-leading information available. Stay Current with the Latest Technologies In addition to updates to nearly every existing chapter, this edition features five entirely new contributions on... Silicon-on-insulator (SOI) materials and devices Supercritical CO2 in semiconductor cleaning Low-κ dielectrics Atomic-layer deposition Damascene copper electroplating Effects of terrestrial radiation on integrated circuits (ICs) Reflecting rapid progress in many areas, several chapters were heavily revised and updated, and in some cases, rewritten to reflect rapid advances in such areas as interconnect technologies, gate dielectrics, photomask fabrication, IC packaging, and 300 mm wafer fabrication. While no book can be up-to-the-minute with the advances in the semiconductor field, the Handbook of Semiconductor Manufacturing Technology keeps the most important data, methods, tools, and techniques close at hand.
Since overall circuit performance has depended primarily on transistor properties, previous efforts to enhance circuit and system speed were focused on transistors as well. During the last decade, however, the parasitic resistance, capacitance, and inductance associated with interconnections began to influence circuit performance and will be the primary factors in the evolution of nanoscale ULSI technology. Because metallic conductivity and resistance to electromigration of bulk copper (Cu) are better than aluminum, use of copper and low-k materials is now prevalent in the international microelectronics industry. As the feature size of the Cu-lines forming interconnects is scaled, resistivity of the lines increases. At the same time electromigration and stress-induced voids due to increased current density become significant reliability issues. Although copper/low-k technology has become fairly mature, there is no single book available on the promise and challenges of these next-generation technologies. In this book, a leader in the field describes advanced laser systems with lower radiation wavelengths, photolithography materials, and mathematical modeling approaches to address the challenges of Cu-interconnect technology.
Handbook of Thin Film Deposition, Fourth Edition, is a comprehensive reference focusing on thin film technologies and applications used in the semiconductor industry and the closely related areas of thin film deposition, thin film micro properties, photovoltaic solar energy applications, materials for memory applications and methods for thin film optical processes. The book is broken up into three sections: scaling, equipment and processing, and applications. In this newly revised edition, the handbook will also explore the limits of thin film applications, most notably as they relate to applications in manufacturing, materials, design and reliability. - Offers a practical survey of thin film technologies aimed at engineers and managers involved in all stages of the process: design, fabrication, quality assurance, applications and the limitations faced by those processes - Covers core processes and applications in the semiconductor industry and new developments within the photovoltaic and optical thin film industries - Features a new chapter discussing Gates Dielectrics
An authoritative, systematic, and comprehensive description of current CMP technology Chemical Mechanical Planarization (CMP) provides the greatest degree of planarization of any known technique. The current standard for integrated circuit (IC) planarization, CMP is playing an increasingly important role in other related applications such as microelectromechanical systems (MEMS) and computer hard drive manufacturing. This reference focuses on the chemical aspects of the technology and includes contributions from the foremost experts on specific applications. After a detailed overview of the fundamentals and basic science of CMP, Microelectronic Applications of Chemical Mechanical Planarization: * Provides in-depth coverage of a wide range of state-of-the-art technologies and applications * Presents information on new designs, capabilities, and emerging technologies, including topics like CMP with nanomaterials and 3D chips * Discusses different types of CMP tools, pads for IC CMP, modeling, and the applicability of tribometrology to various aspects of CMP * Covers nanotopography, CMP performance and defect profiles, CMP waste treatment, and the chemistry and colloidal properties of the slurries used in CMP * Provides a perspective on the opportunities and challenges of the next fifteen years Complete with case studies, this is a valuable, hands-on resource for professionals, including process engineers, equipment engineers, formulation chemists, IC manufacturers, and others. With systematic organization and questions at the end of each chapter to facilitate learning, it is an ideal introduction to CMP and an excellent text for students in advanced graduate courses that cover CMP or related semiconductor manufacturing processes.
Handbook of Thin Film Deposition, Fifth Edition, is a comprehensive reference focusing on thin film technologies and applications used in the semiconductor industry. When pursuing patents, there is a phase called 'reduction to practice' where the idea for a technology transitions from a concept to actual use. The section 'Thin Film Reduction to Practice' includes chapters that review the most relevant methods to fabricate thin films towards practical applications. Then, the latest applications of thin film deposition technologies are discussed. Handbook of Thin Film Deposition, 5th Edition is suitable for materials scientists and engineers in academia and working in semiconductor R&D. - Offers a practical survey of thin film technologies including design, fabrication, and reliability - Covers core processes and applications in the semiconductor industry and discusses latest advances in new thin film development - Features new chapters that review methods on front-end and back-end thin films
The topic of thin films is an area of increasing importance in materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are a few examples of the miniaturized device technologies that depend on the utilization of thin film materials. This book presents an in-depth overview of the novel developments made by the scientific leaders in the area of modern dielectric films for advanced microelectronic applications. It contains clear, concise explanations of material science of dielectric films and their problem for device operation, including high-k, low-k, medium-k dielectric films and also specific features and requirements for dielectric films used in the packaging technology. A broad range of related topics are covered, from physical principles to design, fabrication, characterization, and applications of novel dielectric films.
Understanding and limiting electromigration in thin films is essential to the continued development of advanced copper interconnects for integrated circuits. Electromigration in thin films and electronic devices provides an up-to-date review of key topics in this commercially important area.Part one consists of three introductory chapters, covering modelling of electromigration phenomena, modelling electromigration using the peridynamics approach and simulation and x-ray microbeam studies of electromigration. Part two deals with electromigration issues in copper interconnects, including x-ray microbeam analysis, voiding, microstructural evolution and electromigration failure. Finally, part three covers electromigration in solder, with chapters discussing topics such as electromigration-induced microstructural evolution and electromigration in flip-chip solder joints.With its distinguished editor and international team of contributors, Electromigration in thin films and electronic devices is an essential reference for materials scientists and engineers in the microelectronics, packaging and interconnects industries, as well as all those with an academic research interest in the field. - Provides up-to-date coverage of the continued development of advanced copper interconnects for integrated circuits - Comprehensively reviews modelling of electromigration phenomena, modelling electromigration using the peridynamics approach and simulation, and x-ray microbeam studies of electromigration - Deals with electromigration issues in copper interconnects, including x-ray microbeam analysis, voiding, microstructural evolution and electromigration failure