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This book offers a thorough survey of long wavelength infrared semiconductor emitters based primarily on quantum wells and superlattices. Featuring contributions from the most prominent researchers in the field, this volume allows readers to compare different types of lasers as well as examine investigations of potential far-infrared/terrahertz sources. This is an essential reference for researchers, engineers and graduate students who wish to obtain comprehensive knowledge about infrared semiconductor sources and recent developments in this field.
InP is a key semiconductor for the production of optoelectronic and photonic devices. Its related compounds, such as InGaAsP alloy, have been realized as very important materials for communication in the 1.3 and 1.55 micron spectral regions. Furthermore, the applications on InP and related compounds have extended to other areas that include laser d
The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications. This compilation is very timely given the level of interest and the current stage of research in nitride semiconductor materials and device applications. This volume consists of chapters written by a number of leading researchers in nitride materials and device technology addressing Ohmic and Schottky contacts, AIGalnN multiple quantum well laser diodes, nitride vertical cavity emitting lasers, and ultraviolet photodetectors. This unique volume provides a comprehensive review and introduction to application and devices based on GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers.
II-VI Semiconductor Materials and Their Applications deals with II-VI compound semiconductors and the status of the two areas of current optoelectronics applications: blue-green emitters and IR detectors. Specifically, the growth, charactrtization, materials and device issues for these two applications are described. Emphasis is placed on the wide bandgap emitters where much progress has occurred recently.The book also presents new directions that have potential, future applications in optoelectronics for II-VI materials. In particular, it discusses the status of dilute magnetic semiconductors for mango-optical and electromagnetic devices, nonlinear optical properties, photorefractive effects and new materials and physics phenomena, such as self-organized, low-dimensional structures.II_VI Semiconductor Materials and Their Applications is a valuable reference book for researchers in the field as well as a textbook for materials science and applied physics courses.
Each chapter in this book is written by a group of leading experts in one particular type of microprobe technique. They emphasize the ability of that technique to provide information about small structures (i.e. quantum dots, quantum lines), microscopic defects, strain, layer composition, and its usefulness as diagnostic technique for device degradation. Different types of probes are considered (electrons, photons and tips) and different microscopies (optical, electron microscopy and tunneling). It is an ideal reference for post-graduate and experienced researchers, as well as for crystal growers and optoelectronic device makers.
This book will provide useful information to material growers and evaluators, device design and processing engineers as well as potential users of SiC technologies. This book will help identify remaining challenging issues to stimulate further investigation to realize the full potential of wide band gap SiC for optoelectronic and microelectronic applications.
Carbon (C) and Silicon Germanium (SiGe) work like a magic sauce. At least in small concentrations, they make everything taste better. It is remarkable enough that SiGe, a new material, and the heterobipolar transistor, a new device, appear on the brink of impacting the exploding wireless market. The addition of C to SiGe, albeit in small concentrations, looks to have breakthrough potential. Here, at last, is proof that materials science can put a rocket booster on the silicon-mind, the silicon transistor. Scientific excitement arises, as always, from the new possibilities a multicomponent materials system offers. Bandgaps can be changed, strains can be tuned, and properties can be tailored. This is catnip to the materials scientist. The wide array of techniques applied here to the SiGeC system bear testimony to the ingenious approaches now available for mastering the complexities of new materials
Lead Chalcogenides remain one of the basic materials of modern infrared optoelectronics. This volume presents the [roperties of lead chalcogenides, including the basic physical features, the bulk and epitaxial growth technique, and the 2-D physics of lead chalcogenide-based structures. In addition, the theoretical appraoches for band structure and impurity state calculations are reviewed.
This second part presents a comprehensive overview of fundamental optical properties of the III Nitride Semiconductor. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the second of a two part Volume in the seriesOptoelectronic Properties of Semiconductors and Superlattices. Part II consists of chapters with emphasis on the optical spectroscopy of highly excited group III-nitrides, theoretical calculations and experimental measurements of optical constants of III-nitrides. The remaining five chapters focus on the relationships and properties of GaN and InGaN as relating to III Nitrides. This unique volume provides a comprehensive review and introduction of the defects and structural properties of GaN and related compounds for newcomers to the field and will be a stimulus to further advances for experienced researchers. The chapters contained in this volume constitutes a representative sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.
Since their development in the 1990s, it has been discovered that diluted nitrides have intriguing properties that are not only distinct from those of conventional semiconductor materials, but also are conducive to various applications in optoelectronics and photonics. The book examines these applications and presents a broad and in-depth look at t