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The state-of-the-art of quantum transport and quantum kinetics in semiconductors, plus the latest applications, are covered in this monograph. Since the publishing of the first edition in 1996, the nonequilibrium Green function technique has been applied to a large number of new research topics, and the revised edition introduces the reader to many of these areas. This book is both a reference work for researchers and a self-tutorial for graduate students.
tailor-made molecules and indicated what kind of compounds could be prepared in the near future. In several evening and weekend sessions some participants presented summaries of their recent work and these and other new results were discussed. A draft of these discussions could not be added in printed form because of the 1 imitations set by the total page number of this volume, but to give at least an idea of the problems touched upon during these sessions, a 1 ist of the main contributors together with the title of the conribution discussed is given as an appendix. The reader might contact these authors directly if interested in special recent results. I hope that the participants have profited from the meeting and, furthermore, that at least some of the readers of the following papers are stimulated to high-dimensional cooperative efforts on low-dimensional conductive sol ids. Primarily I have to thank NATO who made this project possible through generous financial support. Especially I would 1 ike to men tion gratefully the excellent cooperation with Dr. T. Kester of the NATO Scientific Affairs Division, whose personal efforts helped in the preparation and organization of the meeting. The Advanced Study Institute could not have taken place without the efforts of Mrs.
Introduces many-body theory of modern quantum statistical mechanics to graduate students in physics, chemistry, engineering and biology.
Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.
This volume contains articles covering a wide range of current directions in modern statistical mechanics and dynamical systems theory. Scientists, researchers, and students working in mathematical physics and statistical mechanics will find this book of great interest. Among the topics covered are: phase transition problems, including superconductivity and superfluidity; methods of nonequilibrium statistical mechanics and fluctuation theory; quantum collective phenomena; superradiance; spin glasses; polaron problems; chains of Bogolyubov equations and kinetic equations; algebraic aspects of quantum-dynamical semigroups; the collective variables method; and qualitative properties of classical dynamical systems."
Heterostructure and quantum-mechanical devices promise significant improvement in the performance of electronic and optoelectronic integrated circuits (ICs). Though these devices are the subject of a vigorous research effort, the current literature is often either highly technical or narrowly focused. This book presents heterostructure and quantum devices to the nonspecialist, especially electrical engineers working with high-performance semiconductor devices. It focuses on a broad base of technical applications using semiconductor physics theory to develop the next generation of electrical engineering devices. The text covers existing technologies and future possibilities within a common framework of high-performance devices, which will have a more immediate impact on advanced semiconductor physics-particularly quantum effects-and will thus form the basis for longer-term technology development.
The Cargese Summer Institute 1975 on Weak and EZeotromagnetio Interaotions at High Energies was organized by the Universite Pierre et Marie Curie (M. LEVY et J.L. BASDEVANT)~ the KathoZieke Universiteit te Leuven (R. GASTMANS) and the Universite CathoZique de Louvain (D. SPEISER~ J. WEYERS) who made in 1973 the first oon taots with some Zeoturers~ who~ on the advioe of NATO joined their efforts and worked in oommon. It was the 16th Summer Institute rd heZd at Cargese and the 3 one organized by the two departments of TheoreticaZ Physios at Leuven and Louvain-Za-Neuve. When the two groups decided (independentZy) on the subjeot of the sohooZ~ they oouZd not know how Zuoky their ohoioe eventuaZZy wouZd turn out to be : rareZy has it being possibZe to present an audienoe with suoh a great number of new and deoisive disooveries who are Zikely to stimuZate the imagination of theoreticians and the researoh projeots of experimentaZists aZike. Suoh were the decisive oonfirmation of the neutraZ ourrents~ the di-muon events~ the sZowZy deoaying new partioZes~ eto. The organizers were grate JUZ indeed that they oouZd find physioists from aZmost alZ great oenters of high energy physios Who had themseZves participated in these disooveries. AZthough the theorists oouZd not matoh during the Zast two years the speotaouZar suooess of their experimentaZ ooZZeagues~ there has been enough important program~ especiaZZy in fieZd theory : renormaZization of gauge theories~ the mechanism disoovered by R. BROUT et aZ. ~ eto.