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This volume presents state-of-the-art works from top academic and research institutions in the areas of high performance semiconductor materials, devices, and circuits. A broad coverage of topics relating to high performance devices and circuits is featured here. There are 46 contributed papers covering a wide range of materials, device types, and applications. These papers describe the results of ongoing research in three general areas: high speed technologies for advanced mixed signal and terahertz applications, advanced technologies for high performance optical links and light sources, and high power density and high efficiency technologies for next generation microwave front ends and power electronics.
This volume presents state-of-the-art works from top academic and research institutions in the areas of high performance semiconductor materials, devices, and circuits. A broad coverage of topics relating to high performance devices and circuits is featured here. There are 46 contributed papers covering a wide range of materials, device types, and applications. These papers describe the results of ongoing research in three general areas: high speed technologies for advanced mixed signal and terahertz applications, advanced technologies for high performance optical links and light sources, and high power density and high efficiency technologies for next generation microwave front ends and power electronics.
This volume presents state-of-the-art works from top academic and research institutions in the areas of high performance semiconductor materials, devices, and circuits. A broad coverage of topics relating to high performance devices and circuits is featured here. There are 46 contributed papers covering a wide range of materials, device types, and applications. These papers describe the results of ongoing research in three general areas: high speed technologies for advanced mixed signal and terahertz applications, advanced technologies for high performance optical links and light sources, and.
III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more. Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas – RF and power electronics Outlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologies Written by a panel of academic and industry experts in each field
Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.
Thermal Management of Gallium Nitride Electronics outlines the technical approaches undertaken by leaders in the community, the challenges they have faced, and the resulting advances in the field. This book serves as a one-stop reference for compound semiconductor device researchers tasked with solving this engineering challenge for future material systems based on ultra-wide bandgap semiconductors. A number of perspectives are included, such as the growth methods of nanocrystalline diamond, the materials integration of polycrystalline diamond through wafer bonding, and the new physics of thermal transport across heterogeneous interfaces. Over the past 10 years, the book's authors have performed pioneering experiments in the integration of nanocrystalline diamond capping layers into the fabrication process of compound semiconductor devices. Significant research efforts of integrating diamond and GaN have been reported by a number of groups since then, thus resulting in active thermal management options that do not necessarily lead to performance derating to avoid self-heating during radio frequency or power switching operation of these devices. Self-heating refers to the increased channel temperature caused by increased energy transfer from electrons to the lattice at high power. This book chronicles those breakthroughs. Includes the fundamentals of thermal management of wide-bandgap semiconductors, with historical context, a review of common heating issues, thermal transport physics, and characterization methods Reviews the latest strategies to overcome heating issues through materials modeling, growth and device design strategies Touches on emerging, real-world applications for thermal management strategies in power electronics
TSV 3D RF Integration: High Resistivity Si Interposer Technology systematically introduces the design, process development and application verification of high-resistivity silicon interpose technology, addressing issues of high frequency loss and high integration level. The book includes a detailed demonstration of the design and process development of Hr-Si interposer technology, gives case studies, and presents a systematic literature review. Users will find this to be a resource with detailed demonstrations of the design and process development of HR-Si interposer technologies, including quality monitoring and methods to extract S parameters. A series of cases are presented, including an example of an integrated inductor, a microstrip inter-digital filter, and a stacked patch antenna. Each chapter includes a systematic and comparative review of the research literature, offering researchers and engineers in microelectronics a uniquely useful handbook to help solve problems in 3D heterogenous RF integration oriented Hr-Si interposer technology. Provides a detailed demonstration of the design and process development of HR-Si (High-Resistivity Silicon) interposer technology Presents a series of implementation case studies that detail modeling and simulation, integration, qualification and testing methods Offers a systematic and comparative literature review of HR-Si interposer technology by topic Offers solutions to problems with TSV (through silicon via) interposer technology, including high frequency loss and cooling problems Gives a systematic and accessible accounting on this leading technology
This book considers some aspects of diamond-based technologies: CVD diamond synthesis, application of diamond as a material with high hardness and thermal conductivity, and the investigation of charge carrier transport properties of synthetic diamond and chemical properties of diamond surfaces.