Download Free High Performance Low Voltage Power Mosfet For High Frequency Synchronous Buck Converters Book in PDF and EPUB Free Download. You can read online High Performance Low Voltage Power Mosfet For High Frequency Synchronous Buck Converters and write the review.

Low Voltage Power MOSFETs focuses on the design of low voltage power MOSFETs and the relation between the device structure and the performance of a power MOSFET used as a switch in power management applications. This SpringerBriefs close the gap between detailed engineering reference books and the numerous technical papers on the subject of power MOSFETs. The material presented covers low voltage applications extending from battery operated portable electronics, through point of load converters, internet infrastructure, automotive applications, to personal computers and server computers. The issues treated in this volume are explained qualitatively using schematic illustrations, making the discussion easy to follow for all prospective readers.
This book presents an in-depth treatment of various power reduction and speed enhancement techniques based on multiple supply and threshold voltages. A detailed discussion of the sources of power consumption in CMOS circuits will be provided whilst focusing primarily on identifying the mechanisms by which sub-threshold and gate oxide leakage currents are generated. The authors present a comprehensive review of state-of-the-art dynamic, static supply and threshold voltage scaling techniques and discuss the pros and cons of supply and threshold voltage scaling techniques.
This book deals with energy delivery challenges of the power processing unit of modern computer microprocessors. It describes in detail the consequences of current trends in miniaturization and clock frequency increase, upon the power delivery unit, referred to as voltage regulator. This is an invaluable reference for anybody needing to understand the key performance limitations and opportunities for improvement, from both a circuit and systems perspective, of state-of-the-art power solutions for next generation CPUs.
Because of the demand for higher efficiencies, smaller output ripple, and smaller converter size for modern power electronic systems, integrated power electronic converters could soon replace conventional switched-mode power supplies. Synthesized integrated converters and related digital control techniques address problems related to cost, space, flexibility, energy efficiency, and voltage regulation—the key factors in digital power management and implementation. Meeting the needs of professionals working in power electronics, as well as advanced engineering students, Integrated Power Electronic Converters and Digital Control explores the many benefits associated with integrated converters. This informative text details boost type, buck type, and buck-boost type integrated topologies, as well as other integrated structures. It discusses concepts behind their operation as well specific applications. Topics discussed include: Isolated DC-DC converters such as flyback, forward, push-pull, full-bridge, and half-bridge Power factor correction and its application Definition of the integrated switched-mode power supplies Steady-state analysis of the boost integrated flyback rectifier energy storage converter Dynamic analysis of the buck integrated forward converter Digital control based on the use of digital signal processors (DSPs) With innovations in digital control becoming ever more pervasive, system designers continue to introduce products that integrate digital power management and control integrated circuit solutions, both hybrid and pure digital. This detailed assessment of the latest advances in the field will help anyone working in power electronics and related industries stay ahead of the curve.
Increasing demand for efficiency and power density pushes Si-based devices to some of their inherent material limits, including those related to temperature operation, switching frequency, and blocking voltage. Recently, SiC-based power devices are promising candidates for high-power and high-frequency switching applications. Today, SiC MOSFETs are commercially available from several manufacturers. Although technology affiliated with SiC MOSFETs is improving rapidly, many challenges remain, and some of them are investigated in this work. The research work in this dissertation is divided into the three following parts. Firstly, the static and switching characteristics of the state-of-the-art 1.2 kV planar and double-trench SiC MOSFETs from two different manufacturers are evaluated. The effects of different biasing voltages, DC link voltages, and temperatures are analysed. The characterisation results show that the devices exhibit superior switching performances under different operating conditions. Moreover, several aspects of using the SiC MOSFET’s body diode in a DC/DC converter are investigated, comparing the body-diodes of planar and double-trench devices. Reverse recovery is evaluated in switching tests considering the case temperature, switching rate, forward current, and applied voltage. Based on the measurement results, the junction temperature is estimated to guarantee safe operation. A simple electro-thermal model is proposed in order to estimate the maximum allowed switching frequency based on the thermal design of the SiC devices. Using these results, hard- and soft-switching converters are designed, and devices are characterised as being in continuous operation at a very high switching frequency of 1 MHz. Thereafter, the SiC MOSFETs are operated in a continuous mode in a 10 kW / 100-250 kHz buck converter, comparing synchronous rectification, the use of the body diode, and the use of an external Schottky diode. Further, the parallel operation of the planar devices is considered. Thus, the paralleling of SiC MOSFETs is investigated before comparing the devices in continuous converter operation. In this regard, the impact of the most common mismatch parameters on the static and dynamic current sharing of the transistors is evaluated, showing that paralleling of SiC MOSFETs is feasible. Subsequently, an analytical model of SiC MOSFETs for switching loss optimisation is proposed. The analytical model exhibits relatively close agreement with measurement results under different test conditions. The proposed model tracks the oscillation effectively during both turn-on and –off transitions. This has been achieved by considering the influence of the most crucial parasitic elements in both power and gate loops. In the second part, a comprehensive short-circuit ruggedness evaluation focusing on different failure modes of the planar and double-trench SiC devices is presented. The effects of different biasing voltages, DC link voltages, and gate resistances are evaluated. Additionally, the temperature-dependence of the short-circuit capability is evaluated, and the associated failure modes are analysed. Subsequently, the design and test of two different methods for overcurrent protection are proposed. The desaturation technique is applied to the SiC MOSFETs and compared to a second method that depends on the stray inductance of the devices. Finally, the benefits of using SiC devices in continuous high-frequency, high-power DC/DC converters is experimentally evaluated. In this regard, a design optimisation of a high-frequency transformer is introduced, and the impact of different core materials, conductor designs, and winding arrangements are evaluated. A ZVZCS Phase-Shift Full-Bridge unidirectional DC/DC converter is proposed, using only the parasitic leakage inductance of the transformer. Experimental results for a 10 kW, (100-250) kHz prototype indicate an efficiency of up to 98.1% for the whole converter. Furthermore, an optimized control method is proposed to minimise the circulation current in the isolated bidirectional dual active bridge DC/DC converter, based on a modified dual-phase-shift control method. This control method is also experimentally compared with traditional single-phase shift control, yielding a significant improvement in efficiency. The experimental results confirm the theoretical analysis and show that the proposed control can enhance the overall converter efficiency and expand the ZVZCS range. Die steigende Nachfrage nach Effizienz und Leistungsdichte bringt Si-basierte eistungsbauteile an einige inhärente Materialgrenzen, die unter anderem mit der Temperaturbelastung, der Schaltfrequenz und der Blockierspannung in Zusammenhang stehen. In jüngster Zeit sind SiC-basierte Leistungsbauelemente vielversprechende Kandidaten für Hochleistungs- und Hochfrequenzanwendungen. Aktuell sind SiC-MOSFETs von mehreren Herstellern im Handel erhältlich. Obwohl sich die Technologie der SiC-MOSFETs rasch verbessert, werden viele Herausforderungen bestehen bleiben. Einige dieser Herausforderungen werden in dieser Arbeit untersucht. Die Untersuchungen in dieser Dissertation gliedern sich in die drei folgenden Teile: Im ersten Teil erfolgt, die statische und die transiente Charakterisierung der aktuellen 1,2 kV Planarund Doubletrench SiC-MOSFETs verschiedener Hersteller. Die Auswirkungen unterschiedlicher Gatespannungen, Zwischenkreisspannungen und Temperaturen werden analysiert. Die Ergebnisse der Charakterisierung zeigen, dass die Bauteile überlegene Schaltleistungen unter verschiedenen Betriebsbedingungen aufweisen. Darüber hinaus wird der Einsatz der internen SiC-Bodydioden in einem DC/DC-Wandler untersucht, wobei die Unterschiede zwischen Planar- und Doppeltrench-Bauteilen aufgezeigt werden. Das Reverse-Recovery-Verhalten wird unter Berücksichtigung der Gehäusetemperatur, der Schaltgeschwindigkeit, des Durchlassstroms und der angelegten Spannung bewertet. Anhand der Messergebnisse wird die Sperrschichttemperatur geschätzt, damit ein sicherer Betrieb gewährleistet ist. Ein einfaches elektrothermisches Modell wird vorgestellt, um die maximal zulässige Schaltfrequenz auf der Grundlage des thermischen Designs der SiC-Bauteile abzuschätzen. Anhand dieser Ergebnisse werden hart- und weichschaltende Umrichter konzipiert und die Bauteile werden im Dauerbetrieb mit einer sehr hohen Schaltfrequenz von 1 MHz untersucht. Danach werden die SiC-MOSFETs im Dauerbetrieb in einem 10 kW / 100-250 kHz-Tiefsetzsteller betrieben. Dabei wird die Synchrongleichrichtung, die Verwendung der internen Diode und die Verwendung einer externen Schottky-Diode verglichen. Außerdem wird die Parallelisierung von SiC-MOSFETs untersucht, bevor die Parallelschaltung der verschiedenen Bauelemente ebenso im kontinuierlichen Konverterbetrieb verglichen wird. Es wird der Einfluss der häufigsten Parametervariationen auf die statische und dynamische Stromaufteilung der Transistoren analysiert, was zeigt, dass eine Parallelisierung von SiC-MOSFETs möglich ist. Anschließend wird ein analytisches Modell der SiC-MOSFETs zur Schaltverlustoptimierung vorgeschlagen. Das analytische Modell zeigt eine relativ enge Übereinstimmung mit den Messergebnissen unter verschiedenen Testbedingungen. Das vorgeschlagene Modell bildet die Schwingungen sowohl beim Ein- als auch beim Ausschalten effektiv nach. Dies wurde durch die Berücksichtigung der wichtigsten parasitären Elemente in Strom- und Gatekreisen erreicht. Im zweiten Teil wird eine umfassende Bewertung der Kurzschlussfestigkeit mit Fokus auf verschiedene Ausfallmodi der planaren und double-trench SiC-Bauelemente vorgestellt. Die Auswirkungen unterschiedlicher Gatespannungen, Zwischenkreisspannungen und Gate-Widerstände werden ausgewertet. Zusätzlich wird die temperaturabhängige Kurzschlussfähigkeit ausgewertet und die zugehörigen Fehlerfälle werden analysiert. Anschließend wird die Auslegung und Prüfung von zwei verschiedenen Verfahren zum Überstromschutz evaluiert. Die „Desaturation“-Technik wird auf SiC-MOSFETs angewendet und mit einer zweiten Methode verglichen, welche die parasitäre Induktivität der Bauelemente nutzt. Schließlich wird der Nutzen des Einsatzes von SiC-Bauteilen in kontinuierlichen Hochfrequenz-Hochleistungs-DC/DC-Wandlern experimentell untersucht. In diesem Zusammenhang wird eine Designoptimierung eines Hochfrequenztransformators vorgestellt und der Einfluss verschiedener Kernmaterialien, Leiterausführungen und Wicklungsanordnungen wird bewertet. Es wird ein unidirektionaler ZVZCS Vollbrücken-DC/DC-Wandler vorgestellt, der nur die parasitäre Streuinduktivität des Transformators verwendet. Experimentelle Ergebnisse für einen 10 kW, (100-250) kHz Prototyp zeigen einenWirkungsgrad von bis zu 98,1% für den gesamten Umrichter. Abschließend wird ein optimiertes Regelverfahren verwendet, welches auf einem modifizierten Dual-Phase-Shift-Regelverfahren basiert, um den Kreisstrom im isolierten bidirektionalen Dual-Aktiv-Brücken-DC/DC-Wandler zu minimieren. Diese Regelmethode wird experimentell mit der herkömmlichen Single-Phase-Shift-Regelung verglichen. Hierbei zeigt sich eine deutliche Effizienzsteigerung durch die neue Regelmethode. Die experimentellen Ergebnisse bestätigen die theoretische Analyse und zeigen, dass die vorgeschlagene Regelung den Gesamtwirkungsgrad des Umrichters erhöhen und den ZVZCS-Bereich erweitern kann.
Design Note Collection, the third book in the Analog Circuit Design series, is a comprehensive volume of applied circuit design solutions, providing elegant and practical design techniques. Design Notes in this volume are focused circuit explanations, easily applied in your own designs. This book includes an extensive power management section, covering switching regulator design, linear regulator design, microprocessor power design, battery management, powering LED lighting, automotive and industrial power design. Other sections span a range of analog design topics, including data conversion, data acquisition, communications interface design, operational amplifier design techniques, filter design, and wireless, RF, communications and network design. Whatever your application -industrial, medical, security, embedded systems, instrumentation, automotive, communications infrastructure, satellite and radar, computers or networking; this book will provide practical design techniques, developed by experts for tackling the challenges of power management, data conversion, signal conditioning and wireless/RF analog circuit design. - A rich collection of applied analog circuit design solutions for use in your own designs. - Each Design Note is presented in a concise, two-page format, making it easy to read and assimilate. - Contributions from the leading lights in analog design, including Bob Dobkin, Jim Williams, George Erdi and Carl Nelson, among others. - Extensive sections covering power management, data conversion, signal conditioning, and wireless/RF.
Photovoltaic Power System: Modelling, Design and Control is an essential reference with a practical approach to photovoltaic (PV) power system analysis and control. It systematically guides readers through PV system design, modelling, simulation, maximum power point tracking and control techniques making this invaluable resource to students and professionals progressing from different levels in PV power engineering. The development of this book follows the author's 15-year experience as an electrical engineer in the PV engineering sector and as an educator in academia. It provides the background knowledge of PV power system but will also inform research direction. Key features: Details modern converter topologies and a step-by-step modelling approach to simulate and control a complete PV power system. Introduces industrial standards, regulations, and electric codes for safety practice and research direction. Covers new classification of PV power systems in terms of the level of maximum power point tracking. Contains practical examples in designing grid-tied and standalone PV power systems. Matlab codes and Simulink models featured on a Wiley hosted book companion website.
Analog circuit and system design today is more essential than ever before. With the growth of digital systems, wireless communications, complex industrial and automotive systems, designers are being challenged to develop sophisticated analog solutions. This comprehensive source book of circuit design solutions aids engineers with elegant and practical design techniques that focus on common analog challenges. The book's in-depth application examples provide insight into circuit design and application solutions that you can apply in today's demanding designs. - This is the companion volume to the successful Analog Circuit Design: A Tutorial Guide to Applications and Solutions (October 2011), which has sold over 5000 copies in its the first 6 months of since publication. It extends the Linear Technology collection of application notes, which provides analog experts with a full collection of reference designs and problem solving insights to apply to their own engineering challenges - Full support package including online resources (LTSpice) - Contents include more application notes on power management, and data conversion and signal conditioning circuit solutions, plus an invaluable circuit collection of reference designs
This book presents select peer-reviewed proceedings of the International Conference on Advances in Renewable Energy and Electric Vehicles (AREEV 2022). The topics covered include renewable energy sources, electric vehicles, energy storage systems, power system protection & security, smart grid, and wide bandgap semiconductor technologies. The book also discusses applications of signal processing, artificial neural networks, optimal and robust control systems, and modeling and simulation of power electronic converters. The book is a valuable reference for academics and professionals interested in power systems, renewable energy, and electric vehicles.