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High Excitation and Short Pulse Phenomena contains the proceeding of the Third Trieste ICTP-IUPAP Semiconductor Symposium on ""High Excitation and Short Pulse Phenomena"", held at the International Center for Theoretical Physics, Trieste, Italy on July, 2-6 1984. This book contains the keynote papers of the symposium and the contributions from the participants. It describes the non-equilibrium electron-hole plasmas in direct and indirect gap semiconductors; transport of plasmas and of hot carriers; and expansion velocities. The book also elucidates the screening effects involved in the exciton-plasma transition; the optical bistability and nonlinearity; and experimental techniques with short pulse spectroscopy. Other topics emphasized are the physical aspects of laser annealing and of melting at the highest excitation levels, as well as the results of high excitation and short pulse physics of quantum wells. The fast relaxation processes, as well as the carrier-carrier and carrier-phonon interactions are also explained. This material will serve as a source of information and reference, and will stimulate ways for further research.
This book contains the proceedings of the NATO Advanced Research Workshop on "Resonant Tunneling in Semiconductors: Physics and Applications", held at Escorial, Spain, on May 14-18, 1990. The tremendous growth in the past two decades in the field of resonant tunneling in semiconductor heterostructures has followed, if not outpaced, the expansion wit nessed in quantum structures in general. Resonant tunneling shares also the multi disciplinary nature of that broad area, with an emphasis on the underlying physics but with a coverage of material systems on the one end and device applications on the other. Indeed, that resonant tunneling provides great flexibility in terms of materials and configurations and that it is inherently a fast process with obvious device impli cations by the presence of a negative differential resistance have contributed to the unrelenting interest in this field. These proceedings consist of 49 refereed articles; they correspond to both invited and contributed talks at the workshop. Because of the intertwinning nature of the subject matter, it has been difficult to subdivide them in well-defined sections. Instead, they are arranged in several broad categories, meant to serve only as guidelines of emphasis on different topics and aspects. The book starts with an introduction to res onant tunneling by providing a perspective of the field in the first article. This is fol lowed by discussions of different material systems with various band-structure effects.
Optical Nonlinearities and Instabilities in Semiconductors deals with various aspects of nonlinear optical phenomena and related optical instabilities in semiconductors. Measurements and explanations of the optical nonlinearities of various semiconductor materials and structures are presented, along with optical bistability and diode laser thresholds; self-oscillations; and chaos. This text consists of 17 chapters and begins with an introductory chapter to the historical background of investigations of the resonance-enhanced nonlinear optical properties of semiconductors and their manifestations in optical instabilities. The discussion then turns to the experimentally observed optical nonlinearities in homogeneous semiconductors and the microscopic theory of the optical band edge nonlinearities. This book considers the studies of the spectral region close to the band gap meant to exploit the resonance enhancement of the nonlinear optical behavior. The remaining chapters focus on nonlinear optical properties of semiconductor quantum wells; dense nonequilibrium excitations in gallium arsenide; optical decay and spatial relaxation; and optical bistability in semiconductor laser amplifiers. A chapter that describes instabilities in semiconductor lasers concludes the book. This book is intended for research students and active research workers who are interested in the basic physics or in the device applications of optical nonlinearities and instabilities in semiconductors.
Ultrashort Laser Pulse Phenomena, Second Edition serves as an introduction to the phenomena of ultra short laser pulses and describes how this technology can be used to examine problems in areas such as electromagnetism, optics, and quantum mechanics. Ultrashort Laser Pulse Phenomena combines theoretical backgrounds and experimental techniques and will serve as a manual on designing and constructing femtosecond ("faster than electronics") systems or experiments from scratch. Beyond the simple optical system, the various sources of ultrashort pulses are presented, again with emphasis on the basic concepts and how they apply to the design of particular sources (dye lasers, solid state lasers, semiconductor lasers, fiber lasers, and sources based on frequency conversion). - Provides an easy to follow guide through "faster than electronics" probing and detection methods - THE manual on designing and constructing femtosecond systems and experiments - Discusses essential technology for applications in micro-machining, femtochemistry, and medical imaging
This volume on the novelties in the electronic properties of solids appears in occasion of Franco Bassani sixtieth birthday, and is dedicated to honour a scientific activity which has contributed so much of the development of this very active area of research. It is re markable that this book can cover so large a part of the current research on electronic properties of solids by contributions from Bassani's former students, collaborators at different stages of his scientific life, and physicists from all over the world who have been in close scientific relationship with him. A personal flavour therefore accompanies a number of the papers of this volume, which are both up-to-date reports on present research and original recollections of the early events of modern solid state physics. The volume begins with a few contributions dealing with theoretical procedures for electronic energy levels, a primary step toward the interpretation of structural and optical properties of extended and confined systems. Other papers concern the interacting state of electrons with light (polaritons) and the effect of the coupling of electrons with lattice vibrations, with emphasis on the thermal behaviour of the electron levels and on such experimental procedures as piezospectroscopy. Electron-lattice interaction in external magnetic field and transport-related properties due to high light excitation are also con sidered. The impact of synchroton radiation on condensed matter spectroscopy is dis cussed in a topical contribution, and optical measurements are presented for extended and impurity levels.
Advanced Nanomaterials for Solar Cells and Light Emitting Diodes discusses the importance of nanomaterials as the active layers in solar cells and light emitting diodes (LEDs), along with the progress of nanomaterials as the electron and hole transporting layers. Specifically, the book reviews the use of nano-morphology of polymers, small molecules, and the organic-inorganic perovskites as the active layers in solar cells and LEDs. The design, fabrication and properties of metal-oxide-based nano-structures as electron and hole transporting layers are also reviewed. In addition, the development of plasmonic nanomaterials for solar cells and LEDs is discussed. Each topic in this book includes an overview of the materials system from principles to process. The advantages, disadvantages and related methodologies are highlighted. The book includes applications based on materials and emphasize how to improve the performance of solar cells and LEDs by the materials design, with a focus on nanomaterials.
This Briefs volume describes the properties and structure of elementary excitations in isotope low-dimensional structures. Without assuming prior knowledge of quantum physics, the present book provides the basic knowledge needed to understand the recent developments in the sub-disciplines of nanoscience isotopetronics, novel device concepts and materials for nanotechnology. It is the first and comprehensive interdisciplinary account of the newly developed scientific discipline isotopetronics.
This book describes new trends in the nanoscience of isotopic materials science. Assuming a background in graduate condensed matter physics and covering the fundamental aspects of isotopic materials science from the very beginning, it equips readers to engage in high-level professional research in this area. The book ́s main objective is to provide insight into the question of why solids are the way they are, either because of how their atoms are bonded with one another, because of defects in their structure, or because of how they are produced or processed. Accordingly, it explores the science of how atoms interact, connects the results to real materials properties, and demonstrates the engineering concepts that can be used to produce or improve semiconductors by design. In addition, it shows how the concepts discussed are applied in the laboratory. The book addresses the needs of researchers, graduate students and senior undergraduate students alike. Although primarily written for materials science audience, it will be equally useful to those teaching in electrical engineering, materials science or even chemical engineering or physics curricula. In order to maintain the focus on materials concepts, however, the book does not burden the reader with details of many of the derivations and equations nor does it delve into the details of electrical engineering topics.