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GADEST '99 Proceedings of GADEST 99
Ever since the invention of the transistor, a fantastic and continual growth in silicon technology has been witnessed; leading to yet more complex functions and higher densities of devices. The current book summarises the key issues of this field. Among other topics, the outlook for silicon wafer technology and silicon materials engineering in the next millennium is reviewed and new approaches to the production of a 200 GHz silicon-based devices are described. Possible applications of dislocation luminescence in silicon are discussed as well as the hopes for, and limitations of, the Si:Er - based 1.54 mm emitter. Various properties of silicon-based materials and heterojunctions are characterised by using novel and state-of-the-art measurement techniques. Hydrogen- and oxygen-related defects, rare-earth impurities as well as radiation and gettering effects are discussed from various points of view. Contents Sections: 1. Keynote Address. 2. Invited Papers. 3. Silicon-Based Materials. 4. Gettering Techniques. 5. Oxygen in Silicon and Germanium. 6. Rare Earth Impurities in Silicon. 7. Radiation Effects in Semiconductors. 8. Dislocations in Silicon. 9. Material Characterisation. 10. Device Characterisation. 11. Hydrogen-Related Defects and Processes.
GADEST 2005 Proceedings of the 11th International Autumn Meeting, Giens, France, September 25-30, 2005
Proceedings of the 3rd International Conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST '89) held at Garzau, GDR, October 1989
Proceedings of the 4th International Conference on Gettering and Defect Engineering In Semiconductor Technology (GADEST '91), Frankfurt, Germany, October 1991
This eighth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective VII (Volumes 230-232) and the end of 2005 (allowing for vagaries of journal availability).
Gettering Defects in Semiconductors fulfills three basic purposes: – to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics; – to identify new directions in research, particularly to enhance the perspective of professionals and young researchers and specialists; – to fill a gap in the contemporary literature on the underlying semiconductor-material theory. The authors address not only well-established gettering techniques but also describe contemporary trends in gettering technologies from an international perspective. The types and properties of structural defects in semiconductors, their generating and their transforming mechanisms during fabrication are described. The primary emphasis is placed on classifying and describing specific gettering techniques, their specificity arising from both their position in a general technological process and the regimes of their application. This book addresses both engineers and material scientists interested in semiconducting materials theory and also undergraduate and graduate students in solid–state microelectronics and nanoelectronics. A comprehensive list of references provides readers with direction for further reading.
GADEST 2013 Selected, peer reviewed papers from the 15th Gettering and Defect Engineering in Semiconductor Technology (GADEST 2013), September 22-27, 2013, Oxford, UK