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Bringing together international experts from 16 countries, Gallium Arsenide and Related Compounds 1992 focuses on device applications for Gallium Arsenide and related compounds. A topic of importance discussed is the first GaAs supercomputer from Fujitsu. The book also explores carbon doping and device applications in laser diodes, light modulators, and amplifiers, emphasizing business opportunity in consumer applications such as personal communications and TV tuners. It includes an account of the use of scanning tunneling microscopies in GaAs and related compounds. This book is ideal for physicists, materials scientists, and electronics and electrical engineers involved in III-V compound research.
The 24th Symposium attracted over 250 submissions, predominantly on growth and characterization. Compound semiconductors have become pervasive in applications that are unique and could not be addressed in any other viable manner, such as laser diodes in compact disk players, high brightness LEDs in automotive tail lights, low noise and low power amplifiers in cellular phones, infra-red diodes in remote controls, low noise amplifier front ends in televisions, and the recent high-brightness blue LEDs. Many of the contributions that engendered these novel products were first reported at the International Symposium on Compound Semiconductors. The procceedings of this conferences are an essential reference for all researchers in semiconductor physics, optoelectronics, electronic and electrical engineering, researching the properties and applications of compound materials.
This book offers a comprehensive overview of the development, current state, and future prospects of wide bandgap semiconductor materials and related optoelectronics devices. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap semiconductors and related optoelectronics devices.
Plasma processing of semiconductors is an interdisciplinary field requiring knowledge of both plasma physics and chemical engineering. The two authors are experts in each of these fields, and their collaboration results in the merging of these fields with a common terminology. Basic plasma concepts are introduced painlessly to those who have studied undergraduate electromagnetics but have had no previous exposure to plasmas. Unnecessarily detailed derivations are omitted; yet the reader is led to understand in some depth those concepts, such as the structure of sheaths, that are important in the design and operation of plasma processing reactors. Physicists not accustomed to low-temperature plasmas are introduced to chemical kinetics, surface science, and molecular spectroscopy. The material has been condensed to suit a nine-week graduate course, but it is sufficient to bring the reader up to date on current problems such as copper interconnects, low-k and high-k dielectrics, and oxide damage. Students will appreciate the web-style layout with ample color illustrations opposite the text, with ample room for notes. This short book is ideal for new workers in the semiconductor industry who want to be brought up to speed with minimum effort. It is also suitable for Chemical Engineering students studying plasma processing of materials; Engineers, physicists, and technicians entering the semiconductor industry who want a quick overview of the use of plasmas in the industry.
These proceedings focus on the materials, devices and applications based on III-V compound and alloy semiconductors; GaAs, InP and other compounds, ternary and quarternary alloys. They report on the discussions that took place between researchers and engineers allowing a unique opportunity for them to discuss subjects from different aspects of the disciplines. For researchers in III-V materials and related compounds.