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Organic Field Effect Transistors presents the state of the art in organic field effect transistors (OFETs), with a particular focus on the materials and techniques useful for making integrated circuits. The monograph begins with some general background on organic semiconductors, discusses the types of organic semiconductor materials suitable for making field effect transistors, the fabrication processes used to make integrated Circuits, and appropriate methods for measurement and modeling. Organic Field Effect Transistors is written as a basic introduction to the subject for practitioners. It will also be of interest to researchers looking for references and techniques that are not part of their subject area or routine. A synthetic organic chemist, for example, who is interested in making OFETs may use the book more as a device design and characterization reference. A thin film processing electrical engineer, on the other hand, may be interested in the book to learn about what types of electron carrying organic semiconductors may be worth trying and learning more about organic semiconductor physics.
The fabrication of the 4H-silicon carbide metal semiconductor field effect transistor (MESFET) is occurring in the Microelectronics Engineering Laboratory (MEL). There are various experiments occurring that characterize different aspects of the device, in order to achieve its optimum performance. The silicon dioxide (SiO2) layer achieves widespread use in the microelectronics industry. This may be used for the dielectric field effect in MOS (metal oxide semiconductor) devices, as a field oxide for isolation between source, gate, and drain contacts, or for device isolation on a very crowded integrated circuit (IC). In this project, the SiO2 is used for isolation between source, gate, drain, and devices. It is imperative to minimize the defect density in the SiO2 layer to increase the reliability and performance of these devices. The quality of the SiO2 is thus characterized by the fabrication of SiC MOS capacitors. Thermal oxidation has been utilized in the fabrication of the SiO2 in the 4H-SiC MOS capacitors adopting the nickel-SiO2-4H-SiC (Ni/SiO2/4H-SiC) structure. The SiO2 layers have been grown onto Si-face and C-face 4H-SiC substrates employing the techniques of sputtering and wet thermal oxidation. The recipes for deposition by these techniques are optimized by trial and error method. Atomic force microscopy (AFM) analysis is employed in the investigation of growth effects of SiO2 on the Si- and C-face of these SiC substrates. MOS capacitors are made utilizing sputtering and wet oxidation methods on the Si-face of 4H-SiC wafers, which are studied utilizing C-V (capacitance versus voltage) techniques.
Silicon-on-Insulator (SOI) Technology reviews the past decade of research, presenting developments which have elapsed between the early SOI fabrication techniques and current VLSI and high-speed SOI circuits. The book explains the principles and the physics of SOI materials fabrication and characterization, SOI processing SOI MOSFET device physics, and the use of SOI material in novel device design. The performances of SOI circuits for VLSI/ULSI and for niche applications are also described. The SOI specialist will find this book invaluable as a source of compiled references covering the different aspects of SOI technology. For the non-specialist, the book serves as an excellent introduction to the topic with guidelines for possible future SOI activity. Simple descriptions of the materials, characterization, design, processing and device options are gathered from the literature, and detailed descriptions of the most important areas of SOI technology are presented. Silicon-on-Insulator Technology may also be used as a textbook for students who want to learn more about the fabrication techniques for silicon-on-insulator materials, the s

Fabrication and Characterization of the Normally-off N-channel Lateral 4H–SiC Metal–oxide–semiconductor Field-effect Transistors*Projcet Supported by the National Natural Science Foundation of China (Grant Nos. 61404098, 61176070, and 61274079), the Doctoral Fund of Ministry of Education of China (Grant Nos. 20110203110010 and 20130203120017), the National Key Basic Research Program of China (Grant No. 2015CB759600), and the Key Specific Projects of Ministry of Education of China (Grant No. 625010101).

Published: 2016

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Abstract: In this paper, the normally-off N-channel lateral 4H–SiC metal–oxide–semiconductor field-effect transistors (MOSFFETs) have been fabricated and characterized. A sandwich- (nitridation–oxidation–nitridation) type process was used to grow the gate dielectric film to obtain high channel mobility. The interface properties of 4H–SiC/SiO2 were examined by the measurement of HF I – V, G – V, and C – V over a range of frequencies. The ideal C – V curve with little hysteresis and the frequency dispersion were observed. As a result, the interface state density near the conduction band edge of 4H–SiC was reduced to 2 × 10 11 eV −1 ·cm −2, the breakdown field of the grown oxides was about 9.8 MV/cm, the median peak field-effect mobility is about 32.5 cm 2 ·V −1 ·s −1, and the maximum peak field-effect mobility of 38 cm 2 ·V −1 ·s −1 was achieved in fabricated lateral 4H–SiC MOSFFETs.
Graphite-oxide based metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated and used as glucose sensor. Herein, graphite-oxide was assembled between two planer electrical electrodes. The sensitivity of the sensor has been enhanced by adding copper (Cu) or silver (Ag) nanoparticles. The nanoparticles were produced by sputtering and inert gas condensation inside an ultra-high vacuum compatible system, and they were self-assembled on the graphite-oxide. The sensitivity of the sensor was increased by an order of magnitude when the silver nanoparticles were added. The sensitivity of each MOSFET was studied at different concentrations of non-enzymatic glucose for potential use in medical and industrial applications.
Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.