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Tiivistelmä.
This investigation covers an effort directed at the problem of obtaining Indium phosphide, by liquid phase epitaxy, for use in high-electric-field applications such as in microwave electron devices. It covers the area of determining the growth rate, the area of obtaining high purity, the area of alloyed contacts, and the determination of high-field properties. It is concluded that multiple-layer InP can be grown predictably and repeatably by liquid phase epitaxy using a multiple-well boat with the substrate on the bottom of the melt. It is also concluded that the density of total ionized impurities is the major remaining problem preventing the use of liquid phase epitaxial InP in microwave device applications. It also appears that carbon, as well as silicon, may contribute substantially to this impurity density.
Annotation This collection of 49 papers identifies the significant advances and distills the current knowledge from the literature which has been published on indium phosphate (InP) in the last ten years. The major areas of discussion are the importance on InP properties in devices; mechanical, thermal, piezoelectric and electro-optic properties; electronic transport properties; band structure; optical properties; defects, deep levels and their detection; and processing technologies. Topics include InP-based alloys as optical amplifiers and lasers, electron and hole mobilities in InP, conduction band and valance band offsets at various InP/semiconductor interfaces, defect energy levels in irradiated or implanted InP, and etching of InP. Some of the material is reprinted from published in 1991. Distributed by INSPEC. Annotation c. Book News, Inc., Portland, OR (booknews.com)
Annotation Scientists from France, Japan, and the US summarize the advances in direct synthesis, in large crystal growth with low dislocation densities, and in epitaxial layer growth. They provide a description of substrate preparation and evaluation, and methods for the reduction of dislocations and measurement of stoichiometric defects. Topics include the state of the art in liquid encapsulated Czochralski (LEC), growth of dislocation-free InP, epitaxial InP grown by the hydride vapor phase process, commercial production of InP single crystals and substrates, and the use of low pressure MOCVD to prepare epitaxial layers of InP, GaInAs and GaInP heterostructures on InP substrates. Annotation(c) 2003 Book News, Inc., Portland, OR (booknews.com).
Invaluble to those studying or exploiting Indium Phosphide, which can provide tunable light sources at wavelengths which undergo minimum attenuation in fiber optic cables.
We have developed a liquid phase epitaxy system for growth of thin- film, III-V materials. We have focused primarily on InP, InGaAs, and InGaAsP growth for fabricating electro-optical devices. We have developed a standard approach for each type of growth and diagnostic techniques for characterization purposes.