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This book presents an overview of the current understanding of the physics of zero-dimensional semiconductors. It concentrates mainly on quantum dots of wide-gap semiconductors, but touches also on zero-dimensional systems based on silicon and III-V materials. After providing the reader with a theoretical background, the author illustrates the specific properties of three-dimensionally confined semiconductors, such as the size dependence of energy states, optical transitions, and dephasing mechanisms with the results from numerous experiments in linear and nonlinear spectroscopy. Technological concepts of the growth concepts and the potential of this new class of semiconductor materials for electro-optic and nonlinear optical devices are also discussed.
Semiconductor Quantum Dots presents an overview of the background and recent developments in the rapidly growing field of ultrasmall semiconductor microcrystallites, in which the carrier confinement is sufficiently strong to allow only quantized states of the electrons and holes. The main emphasis of this book is the theoretical analysis of the confinement induced modifications of the optical and electronic properties of quantum dots in comparison with extended materials. The book develops the theoretical background material for the analysis of carrier quantum-confinement effects, introduces the different confinement regimes for relative or center-of-mass motion quantization of the electron-hole-pairs, and gives an overview of the best approximation schemes for each regime. A detailed discussion of the carrier states in quantum dots is presented and surface polarization instabilities are analyzed, leading to the self-trapping of carriers near the surface of the dots. The influence of spin-orbit coupling on the quantum-confined carrier states is discussed. The linear and nonlinear optical properties of small and large quantum dots are studied in detail and the influence of the quantum-dot size distribution in many realistic samples is outlined. Phonons in quantum dots as well as the influence of external electric or magnetic fields are also discussed. Last but not least the recent developments dealing with regular systems of quantum dots are also reviewed. All things included, this is an important piece of work on semiconductor quantum dots not to be dismissed by serious researchers and physicists.
This textbook presents the basic elements needed to understand and engage in research in semiconductor physics. It deals with elementary excitations in bulk and low-dimensional semiconductors, including quantum wells, quantum wires and quantum dots. The basic principles underlying optical nonlinearities are developed, including excitonic and many-body plasma effects. The fundamentals of optical bistability, semiconductor lasers, femtosecond excitation, optical Stark effect, semiconductor photon echo, magneto-optic effects, as well as bulk and quantum-confined Franz-Keldysh effects are covered. The material is presented in sufficient detail for graduate students and researchers who have a general background in quantum mechanics. Request Inspection Copy
Examines the optical properties of low-dimensional semiconductor structures, a hot research area - for graduate students and researchers.
Semiconductor structures containing zero-dimensional objects — quantum dots — are the subject of intensive research worldwide. This monograph describes a detailed theory of the electronic band structure and optical properties of semiconductor quantum dots.The author provides a comprehensive description of an original approach based on a combination of the Fourier transform, the Green's function and plane-wave expansion techniques in the framework of multiband 8x8 kp theory. The calculated band structure, optical properties and device applications are analyzed in line with available experiments for a large number of realistic quantum dot structures and various combinations of materials, such as InGaN, GaN/AlN, ZnSe, InGaAs (including dots-in-the-well), ZnSe/CdSe, and lead salts.
Captures the most up-to-date research in the field, written in an accessible style by the world's leading experts.
The vast technological potential of nanocrystalline materials, as well as current intense interest in the physics and chemistry of nanoscale phenomena, has led to explosive growth in research on semiconductor nanocrystals, also known as nanocrystal quantum dots, and metal nanoparticles. Semiconductor and Metal Nanocrystals addresses current topics impacting the field including synthesis and assembly of nanocrystals, theory and spectroscopy of interband and intraband optical transitions, single-nanocrystal optical and tunneling spectroscopies, electrical transport in nanocrystal assemblies, and physical and engineering aspects of nanocrystal-based devices. Written by experts who have contributed pioneering research, this reference comprises key advances in the field of semiconductor nanocrystal quantum dots and metal nanoparticles over the past several years. Focusing specifically on nanocrystals generated through chemical techniques, Semiconductor and Metal Nanocrystals Merges investigative frontiers in physics, chemistry, and engineering Documents advances in nanocrystal synthesis and assembly Explores the theory of electronic excitations in nanoscale particles Presents comprehensive information on optical spectroscopy of interband and intraband optical transitions Reviews data on single-nanocrystal optical and tunneling spectroscopies Weighs controversies related to carrier relaxation dynamics in ultrasmall nanoparticles Discusses charge carrier transport in nanocrystal assemblies Provides examples of lasing and photovoltaic nanocrystal-based devices Semiconductor and Metal Nanocrystals is a must read for scientists, engineers, and upper-level undergraduate and graduate students interested in the physics and chemistry of nanoscale semiconductor and metal particles, as well as general nanoscale science. About the Editor: VICTOR I. KLIMOV is Team Leader, Softmatter Nanotechnology and Advanced Spectroscopy Team, Chemistry Division, Los Alamos National Laboratory, New Mexico. The recipient of the Los Alamos Fellows Prize (2000), he is a Fellow of the Alexander von Humboldt Foundation, leader of the Nanophotonics and Nanoelectronics Thrust of the Center for Integrated Nanotechnologies (U.S. Department of Energy), a member of the Los Alamos Board of Governors of the Institute for Complex Adaptive Matter, and a member of the Steering Committee for the Los Alamos Quantum Institute. He received the M.S. (1978), Ph.D. (1981), and Dr. Sci. (1993) degrees from Moscow State University, Russia.
Semiconductor quantum dots represent one of the fields of solid state physics that have experienced the greatest progress in the last decade. Recent years have witnessed the discovery of many striking new aspects of the optical response and electronic transport phenomena. This book surveys this progress in the physics, optical spectroscopy and application-oriented research of semiconductor quantum dots. It focuses especially on excitons, multi-excitons, their dynamical relaxation behaviour and their interactions with the surroundings of a semiconductor quantum dot. Recent developments in fabrication techniques are reviewed and potential applications discussed. This book will serve not only as an introductory textbook for graduate students but also as a concise guide for active researchers.
A graduate textbook presenting the underlying physics behind devices that drive today's technologies. The book covers important details of structural properties, bandstructure, transport, optical and magnetic properties of semiconductor structures. Effects of low-dimensional physics and strain - two important driving forces in modern device technology - are also discussed. In addition to conventional semiconductor physics the book discusses self-assembled structures, mesoscopic structures and the developing field of spintronics. The book utilizes carefully chosen solved examples to convey important concepts and has over 250 figures and 200 homework exercises. Real-world applications are highlighted throughout the book, stressing the links between physical principles and actual devices. Electronic and Optoelectronic Properties of Semiconductor Structures provides engineering and physics students and practitioners with complete and coherent coverage of key modern semiconductor concepts. A solutions manual and set of viewgraphs for use in lectures are available for instructors, from [email protected].
This book reflects the current status of theoretical and experimental research of graphene based nanostructures, in particular quantum dots, at a level accessible to young researchers, graduate students, experimentalists and theorists. It presents the current state of research of graphene quantum dots, a single or few monolayer thick islands of graphene. It introduces the reader to the electronic and optical properties of graphite, intercalated graphite and graphene, including Dirac fermions, Berry's phase associated with sublattices and valley degeneracy, covers single particle properties of graphene quantum dots, electron-electron interaction, magnetic properties and optical properties of gated graphene nanostructures. The electronic, optical and magnetic properties of the graphene quantum dots as a function of size, shape, type of edge and carrier density are considered. Special attention is paid to the understanding of edges and the emergence of edge states for zigzag edges. Atomistic tight binding and effective mass approaches to single particle calculations are performed. Furthermore, the theoretical and numerical treatment of electron-electron interactions at the mean-field, HF, DFT and configuration-interaction level is described in detail.