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In the “More than Moore” era, performance requirements for leading edge semiconductor devices are demanding extremely fine pitch interconnection in semiconductor packaging. Direct copper interconnection has emerged as the technology of choice in the semiconductor industry for fine pitch interconnection, with significant benefits for interconnect density and device performance. Low-temperature direct copper bonding, in particular, will become widely adopted for a broad range of highperformance semiconductor devices in the years to come. This book offers a comprehensive review and in-depth discussions of the key topics in this critical new technology. Chapter 1 reviews the evolution and the most recent advances in semiconductor packaging, leading to the requirement for extremely fine pitch interconnection, and Chapter 2 reviews different technologies for direct copper interconnection, with advantages and disadvantages for various applications. Chapter 3 offers an in-depth review of the hybrid bonding technology, outlining the critical processes and solutions. The area of materials for hybrid bonding is covered in Chapter 4, followed by several chapters that are focused on critical process steps and equipment for copper electrodeposition (Chapter 5), planarization (Chapter 6), wafer bonding (Chapter 7), and die bonding (Chapter 8). Aspects related to product applications are covered in Chapter 9 for design and Chapter 10 for thermal simulation. Finally, Chapter 11 covers reliability considerations and computer modeling for process and performance characterization, followed by the final chapter (Chapter 12) outlining the current and future applications of the hybrid bonding technology. Metrology and testing are also addressed throughout the chapters. Business, economic, and supply chain considerations are discussed as related to the product applications and manufacturing deployment of the technology, and the current status and future outlook as related to the various aspects of the ecosystem are outlined in the relevant chapters of the book. The book is aimed at academic and industry researchers as well as industry practitioners, and is intended to serve as a comprehensive source of the most up-to-date knowledge, and a review of the state-of-the art of the technology and applications, for direct copper interconnection and advanced semiconductor packaging in general.
In the "More than Moore" era, performance requirements for leading edge semiconductor devices are demanding extremely fine pitch interconnection in semiconductor packaging. Direct copper interconnection has emerged as the technology of choice in the semiconductor industry for fine pitch interconnection, with significant benefits for interconnect density and device performance. Low-temperature direct copper bonding, in particular, will become widely adopted for a broad range of highperformance semiconductor devices in the years to come. This book offers a comprehensive review and in-depth discussions of the key topics in this critical new technology. Chapter 1 reviews the evolution and the most recent advances in semiconductor packaging, leading to the requirement for extremely fine pitch interconnection, and Chapter 2 reviews different technologies for direct copper interconnection, with advantages and disadvantages for various applications. Chapter 3 offers an in-depth review of the hybrid bonding technology, outlining the critical processes and solutions. The area of materials for hybrid bonding is covered in Chapter 4, followed by several chapters that are focused on critical process steps and equipment for copper electrodeposition (Chapter 5), planarization (Chapter 6), wafer bonding (Chapter 7), and die bonding (Chapter 8). Aspects related to product applications are covered in Chapter 9 for design and Chapter 10 for thermal simulation. Finally, Chapter 11 covers reliability considerations and computer modeling for process and performance characterization, followed by the final chapter (Chapter 12) outlining the current and future applications of the hybrid bonding technology. Metrology and testing are also addressed throughout the chapters. Business, economic, and supply chain considerations are discussed as related to the product applications and manufacturing deployment of the technology, and the current status and future outlook as related to the various aspects of the ecosystem are outlined in the relevant chapters of the book. The book is aimed at academic and industry researchers as well as industry practitioners, and is intended to serve as a comprehensive source of the most up-to-date knowledge, and a review of the state-of-the art of the technology and applications, for direct copper interconnection and advanced semiconductor packaging in general.
In the “More than Moore” era, performance requirements for leading edge semiconductor devices are demanding extremely fine pitch interconnection in semiconductor packaging. Direct copper interconnection has emerged as the technology of choice in the semiconductor industry for fine pitch interconnection, with significant benefits for interconnect density and device performance. Low-temperature direct copper bonding, in particular, will become widely adopted for a broad range of highperformance semiconductor devices in the years to come. This book offers a comprehensive review and in-depth discussions of the key topics in this critical new technology. Chapter 1 reviews the evolution and the most recent advances in semiconductor packaging, leading to the requirement for extremely fine pitch interconnection, and Chapter 2 reviews different technologies for direct copper interconnection, with advantages and disadvantages for various applications. Chapter 3 offers an in-depth review of the hybrid bonding technology, outlining the critical processes and solutions. The area of materials for hybrid bonding is covered in Chapter 4, followed by several chapters that are focused on critical process steps and equipment for copper electrodeposition (Chapter 5), planarization (Chapter 6), wafer bonding (Chapter 7), and die bonding (Chapter 8). Aspects related to product applications are covered in Chapter 9 for design and Chapter 10 for thermal simulation. Finally, Chapter 11 covers reliability considerations and computer modeling for process and performance characterization, followed by the final chapter (Chapter 12) outlining the current and future applications of the hybrid bonding technology. Metrology and testing are also addressed throughout the chapters. Business, economic, and supply chain considerations are discussed as related to the product applications and manufacturing deployment of the technology, and the current status and future outlook as related to the various aspects of the ecosystem are outlined in the relevant chapters of the book. The book is aimed at academic and industry researchers as well as industry practitioners, and is intended to serve as a comprehensive source of the most up-to-date knowledge, and a review of the state-of-the art of the technology and applications, for direct copper interconnection and advanced semiconductor packaging in general.
Since overall circuit performance has depended primarily on transistor properties, previous efforts to enhance circuit and system speed were focused on transistors as well. During the last decade, however, the parasitic resistance, capacitance, and inductance associated with interconnections began to influence circuit performance and will be the primary factors in the evolution of nanoscale ULSI technology. Because metallic conductivity and resistance to electromigration of bulk copper (Cu) are better than aluminum, use of copper and low-k materials is now prevalent in the international microelectronics industry. As the feature size of the Cu-lines forming interconnects is scaled, resistivity of the lines increases. At the same time electromigration and stress-induced voids due to increased current density become significant reliability issues. Although copper/low-k technology has become fairly mature, there is no single book available on the promise and challenges of these next-generation technologies. In this book, a leader in the field describes advanced laser systems with lower radiation wavelengths, photolithography materials, and mathematical modeling approaches to address the challenges of Cu-interconnect technology.
A textbook designed to accompany The Society of Photo-Optical Instrumentation Engineers' short course on improving interconnect performance for increased speed in overall circuit performance authored by Steinbrnchel (materials science and engineering, Renselaer Polytechnic Institute) and Chin (senio
Comprising the proceedings of an MRS symposium held in April of 1998, contributions in this volume are divided into ten sections: interconnection frontiers; aluminum interconnects; cobalt and other silicides; titanium silicide; MOSFET, source, drain, and interconnect engineering; copper interconnects and barriers; a poster session on advanced interconnects and contacts; contacts to compound semiconductor devices; novel interconnect materials and schemes; and diffusion barriers. Annotation copyrighted by Book News, Inc., Portland, OR
All recent developments of nitrides and of their technology are gathered here in a single book, with chapters written by world leaders in the field.
The need for advanced thermal management materials in electronic packaging has been widely recognized as thermal challenges become barriers to the electronic industry’s ability to provide continued improvements in device and system performance. With increased performance requirements for smaller, more capable, and more efficient electronic power devices, systems ranging from active electronically scanned radar arrays to web servers all require components that can dissipate heat efficiently. This requires that the materials have high capability of dissipating heat and maintaining compatibility with the die and electronic packaging. In response to critical needs, there have been revolutionary advances in thermal management materials and technologies for active and passive cooling that promise integrable and cost-effective thermal management solutions. This book meets the need for a comprehensive approach to advanced thermal management in electronic packaging, with coverage of the fundamentals of heat transfer, component design guidelines, materials selection and assessment, air, liquid, and thermoelectric cooling, characterization techniques and methodology, processing and manufacturing technology, balance between cost and performance, and application niches. The final chapter presents a roadmap and future perspective on developments in advanced thermal management materials for electronic packaging.
Currently, the term 3D integration includes a wide variety of different integration methods, such as 2.5-dimensional (2.5D) interposer-based integration, 3D integrated circuits (3D ICs), 3D systems-in-package (SiP), 3D heterogeneous integration, and monolithic 3D ICs. The goal of this book is to provide readers with an understanding of the latest challenges and issues in 3D integration. TSVs are not the only technology element needed for 3D integration. There are numerous other key enabling technologies required for 3D integration, and the speed of the development in this emerging field is very rapid. To provide readers with state-of-the-art information on 3D integration research and technology developments, each chapter has been contributed by some of the world’s leading scientists and experts from academia, research institutes, and industry from around the globe. Covers chip/wafer level 3D integration technology, memory stacking, reconfigurable 3D, and monolithic 3D IC. Discusses the use of silicon interposer and organic interposer. Presents architecture, design, and technology implementations for 3D FPGA integration. Describes oxide bonding, Cu/SiO2 hybrid bonding, adhesive bonding, and solder bonding. Addresses the issue of thermal dissipation in 3D integration.
Multi-chip integration with emerging technologies such as a 3D IC stack or 2.5D interposer is primarily enabled by the off-chip interconnections. The I/O density, speed and bandwidth requirements for emerging mobile and high-performance systems are projected to drive the interconnection pitch to less than 20 microns by 2015. A new class of low-temperature, low-pressure, high-throughput, cost-effective and maufacturable technologies are needed to enable such fine-pitch interconnections. A range of interconnection technologies are being pursued to achieve these fine-pitch interconnections, most notably direct Cu-Cu interconnections and copper pillars with solder caps. Direct Cu-Cu bonding has been a target in the semiconductor industry due to the high electrical and thermal conductivity of copper, its high current-carrying capability and compatibility with CMOS BEOL processes. However, stringent coplanarity requirements and high temperature and high pressure bonding needed for assembly have been the major barriers for this technology. Copper-solder interconnection technology has therefore become the main workhouse for off-chip interconnections, and has recently been demonstrated at pitches as low as 40 microns. However, the current interconnection approaches using copper-solder structures are not scalable to finer feature sizes due to electromigration, and reliability issues arising with decreased solder content. Solid Liquid Inter-Diffusion (SLID) bonding is a promising solution to achieve ultra-fine-pitch and ultra-short interconnections with a copper-solder system, as it relies on the conversion of the entire solder volume into thermally-stable and highly electromigration-resistant intermetallics with no residual solder. Such a complete conversion of solders to stable intermetallics, however, relies on a long assembly time or a subsequent post-annealing process. To achieve pitches lower than 30 micron pitch, this research aims to study two ultra-short copper-solder interconnection approaches: (i) copper pillar and solder cap technology, and (ii) a novel technology which will enable interconnections with improved electrical performance by fast and complete conversion of solders to stable intermetallics (IMCs) using Solid Liquid Diffusion (SLID) bonding approach. SLID bonding, being a liquid state diffusion process, combined with a novel, alternate layered copper-solder bump structure, leads to higher diffusion rates and a much faster conversion of solder to IMCs. Moreover this assembly bonding is done at a much lower temperature and pressure as compared to that used for Cu-Cu interconnections. FEM was used to study the effect of various assembly and bump-design characteristics on the post-assembly stress distribution in the ultra-short copper-solder joints, and design guidelines were evolved based on these results. Test vehicles, based on these guidelines, were designed and fabricated at 50 and 100 micron pitch for experimental analysis. The bumping process was optimized, and the effect of current density on the solder composition, bump-height non-uniformity and surface morphology of the deposited solder were studied. Ultra-short interconnections formed using the copper pillar and solder cap technology were characterized. A novel multi-layered copper-solder stack was designed based on diffusion modeling to optimize the bump stack configuration for high-throughput conversion to stable Cu3Sn intermetallic. Following this modeling, a novel bumping process with alternating copper and tin plating layers to predesigned thicknesses was then developed to fabricate the interconnection structure. Alternate layers of copper and tin were electroplated on a blanket wafer, as a first demonstration of this stack-technology. Dies with copper-solder test structures were bonded using SLID bonding to validate the formation of stable intermetallics.