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Low-Dimensional Semiconductor Structures offers a seamless, atoms-to-devices introduction to the latest quantum heterostructures. It covers their fabrication; electronic, optical, and transport properties; role in exploring new physical phenomena; and utilization in devices. The authors describe the epitaxial growth of semiconductors and the physical behavior of electrons and phonons in low-dimensional structures. They then go on to discuss nonlinear optics in quantum heterostructures. The final chapters deal with semiconductor lasers, mesoscopic devices, and high-speed heterostructure devices. The book contains many exercises and comprehensive references.
Low-dimensional semiconductor quantum structures are a major, high-technological development that has a considerable industrial potential. The field is developing extremely rapidly and the present book represents a timely guide to the latest developments in device technology, fundamental properties, and some remarkable applications. The content is largely tutorial, and the book could be used as a textbook. The book deals with the physics, fabrication, characteristics and performance of devices based on low-dimensional semiconductor structures. It opens with fabrication procedures. The fundamentals of quantum structures and electro-optical devices are dealt with extensively. Nonlinear optical devices are discussed from the point of view of physics and applications of exciton saturation in MQW structures. Waveguide-based devices are also described in terms of linear and nonlinear coupling. The basics of pseudomorphic HEMT technology, device physics and materials layer design are presented. Each aspect is reviewed from the elementary basics up to the latest developments. Audience: Undergraduates in electrical engineering, graduates in physics and engineering schools. Useful for active scientists and engineers wishing to update their knowledge and understanding of recent developments.
This volume on Advanced Electronic Technologies and Systems based on Low Dimensional Quantum Devices closes a three years series of NATO -AS!' s. The first year was focused on the fundamental properties and applications. The second year was devoted to Devices Based on Low-Dimensional Semiconductor Structures. The third year is covering Systems Based on Low-Dimensional Quantum Semiconductor Devices. The three volumes containing the lectures given at the three successive NATO -ASI's constitute a complete review on the latest advances in semiconductor Science and Technology from the methods of fabrication of the quantum structures through the fundamental physics am basic knowledge of properties and projection of performances to the technology of devices and systems. In the first volume: " Fabrication, Properties and Application of Low Dimensional Semiconductors" are described the practical ways in which quantum structures are produced, the present status of the technology, difficulties encountered, and advances to be expected. The basic theory of Quantum Wells, Double Quantum Wells and Superlattices is introduced and the fundamental aspects of their optical properties are presented. The effect of reduction of dimensionality on lattice dynamics of quantum structures is also discussed. In the second volume: " Devices Based on Low Dimensional Structures" the fundamentals of quantum structures and devices in the two major fields: Electro-Optical Devices and Pseudomorphic High Eectron Mobility Transistors are extensively discussed.
This volume on Advanced Electronic Technologies and Systems based on Low Dimensional Quantum Devices closes a three years series of NATO -AS!' s. The first year was focused on the fundamental properties and applications. The second year was devoted to Devices Based on Low-Dimensional Semiconductor Structures. The third year is covering Systems Based on Low-Dimensional Quantum Semiconductor Devices. The three volumes containing the lectures given at the three successive NATO -ASI's constitute a complete review on the latest advances in semiconductor Science and Technology from the methods of fabrication of the quantum structures through the fundamental physics am basic knowledge of properties and projection of performances to the technology of devices and systems. In the first volume: " Fabrication, Properties and Application of Low Dimensional Semiconductors" are described the practical ways in which quantum structures are produced, the present status of the technology, difficulties encountered, and advances to be expected. The basic theory of Quantum Wells, Double Quantum Wells and Superlattices is introduced and the fundamental aspects of their optical properties are presented. The effect of reduction of dimensionality on lattice dynamics of quantum structures is also discussed. In the second volume: " Devices Based on Low Dimensional Structures" the fundamentals of quantum structures and devices in the two major fields: Electro-Optical Devices and Pseudomorphic High Eectron Mobility Transistors are extensively discussed.
This book focuses on the fundamental phenomena at nanoscale. It covers synthesis, properties, characterization and computer modelling of nanomaterials, nanotechnologies, bionanotechnology, involving nanodevices. Further topics are imaging, measuring, modeling and manipulating of low dimensional matter at nanoscale. The topics covered in the book are of vital importance in a wide range of modern and emerging technologies employed or to be employed in most industries, communication, healthcare, energy, conservation , biology, medical science, food, environment, and education, and consequently have great impact on our society.
This text is a first attempt to pull together the whole of semiconductor science and technology since 1970 in so far as semiconductor multilayers are concerned. Material, technology, physics and device issues are described with approximately equal emphasis, and form a single coherant point of view. The subject matter is the concern of over half of today's active semiconductor scientists and technologists, the remainder working on bulk semiconductors and devices. It is now routine to design and the prepare semiconductor multilayers at a time, with independent control over the dropping and composition in each layer. In turn these multilayers can be patterned with features that as a small as a few atomic layers in lateral extent. The resulting structures open up many new ares of exciting solid state and quantum physics. They have also led to whole new generations of electronic and optoelectronic devices whose superior performance relates back to the multilayer structures. The principles established in the field have several decades to go, advancing towards the ultimate of materials engineering, the design and preparation of solids atom by atom. The book should appeal equally to physicists, electronic engineers and materials scientists.
This Advanced Study Institute on the Electronic Properties of Multilayers and Low Dimensional Semiconductor Structures focussed on several of the most active areas in modern semiconductor physics. These included resonant tunnelling and superlattice phenomena and the topics of ballistic transport, quantised conductance and anomalous magnetoresistance effects in laterally gated two-dimensional electron systems. Although the main emphasis was on fundamental physics, a series of supporting lectures described the underlying technology (Molecular Beam Epitaxy, Metallo-Organic Chemical Vapour Deposition, Electron Beam Lithography and other advanced processing technologies). Actual and potential applications of low dimensional structures in optoelectronic and high frequency devices were also discussed. The ASI took the form of a series of lectures of about fifty minutes' duration which were given by senior researchers from a wide range of countries. Most of the lectures are recorded in these Proceedings. The younger members of the Institute made the predominant contribution to the discussion sessions following each lecture and, in addition, provided most of the fifty-five papers that were presented in two lively poster sessions. The ASl emphasised the impressive way in which this research field has developed through the fruitful interaction of theory, experiment and semiconductor device technology. Many of the talks demonstrated both the effectiveness and limitations of semiclassical concepts in describing the quantum phenomena exhibited by electrons in low dimensional structures.
Experimental progress over the past few years has made it possible to test a n- ber of fundamental physical concepts related to the motion of electrons in low dimensions. The production and experimental control of novel structures with typical sizes in the sub-micrometer regime has now become possible. In parti- lar, semiconductors are widely used in order to con?ne the motion of electrons in two-dimensional heterostructures. The quantum Hall e?ect was one of the ?rst highlights of the new physics that is revealed by this con?nement. In a further step of the technological development in semiconductor-heterostructures, other arti?cial devices such as quasi one-dimensional ‘quantum wires’ and ‘quantum dots’ (arti?cial atoms) have also been produced. These structures again di?er very markedly from three- and two-dimensional systems, especially in relation to the transport of electrons and the interaction with light. Although the technol- ical advances and the experimental skills connected with these new structures are progressing extremely fast, our theoretical understanding of the physical e?ects (such as the quantum Hall e?ect) is still at a very rudimentary level. In low-dimensional structures, the interaction of electrons with one another and with other degrees of freedoms such as lattice vibrations or light gives rise to new phenomena that are very di?erent from those familiar in the bulk ma- rial. The theoretical formulation of the electronic transport properties of small devices may be considered well-established, provided interaction processes are neglected.
The composition of modern semiconductor heterostructures can be controlled precisely on the atomic scale to create low-dimensional systems. These systems have revolutionised semiconductor physics, and their impact on technology, particularly for semiconductor lasers and ultrafast transistors, is widespread and burgeoning. This book provides an introduction to the general principles that underlie low-dimensional semiconductors. As far as possible, simple physical explanations are used, with reference to examples from actual devices. The author shows how, beginning with fundamental results from quantum mechanics and solid-state physics, a formalism can be developed that describes the properties of low-dimensional semiconductor systems. Among numerous examples, two key systems are studied in detail: the two-dimensional electron gas, employed in field-effect transistors, and the quantum well, whose optical properties find application in lasers and other opto-electronic devices. The book includes many exercises and will be invaluable to undergraduate and first-year graduate physics or electrical engineering students taking courses in low-dimensional systems or heterostructure device physics.
Presenting the latest advances in artificial structures, this volume discusses in-depth the structure and electron transport mechanisms of quantum wells, superlattices, quantum wires, and quantum dots. It will serve as an invaluable reference and review for researchers and graduate students in solid-state physics, materials science, and electrical and electronic engineering.