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The conversion efficiency of a solar cell can substantially be increased by improved material properties and associated designs. In this book, it has been shown that how the parametric optimization can lead to successful design of amorphous silicon thin film solar cells by using a software called AMPS-1D (Analysis of Microelectronic and Photonic Structures) prior to fabrication. Solar cells of single junction based on hydrogenated amorphous (a-Si: H) have been analyzed by using AMPS-1D simulator. The efficiency of single junction a-Si: H can be achieved as high as over 19% after parametric optimization in the simulation. Therefore, the numerically designed and optimized a-SiC: H/a-SiC: H-buffer/a-Si: H/a-Si: H solar cells have been fabricated by using PECVD (plasma enhanced chemical vapor deposition) where the best initial conversion efficiency of 10.02% has been achieved (Voc= 0.88 V, Jsc= 15.57 mA/cm2 and FF= 0.73) as one of the highest recorded efficiency to
Amorphous silicon solar cell technology has evolved considerably since the first amorphous silicon solar cells were made at RCA Laboratories in 1974. Scien tists working in a number of laboratories worldwide have developed improved alloys based on hydrogenated amorphous silicon and microcrystalline silicon. Other scientists have developed new methods for growing these thin films while yet others have developed new photovoltaic (PV) device structures with im proved conversion efficiencies. In the last two years, several companies have constructed multi-megawatt manufacturing plants that can produce large-area, multijunction amorphous silicon PV modules. A growing number of people be lieve that thin-film photovoltaics will be integrated into buildings on a large scale in the next few decades and will be able to make a major contribution to the world's energy needs. In this book, Ruud E. I. Schropp and Miro Zeman provide an authoritative overview of the current status of thin film solar cells based on amorphous and microcrystalline silicon. They review the significant developments that have occurred during the evolution of the technology and also discuss the most im portant recent innovations in the deposition of the materials, the understanding of the physics, and the fabrication and modeling of the devices.
Silicon Based Thin Film Solar Cells explains concepts related to technologies for silicon (Si) based photovoltaic applications. Topics in this book focus on ‘new concept’ solar cells. These kinds of cells can make photovoltaic power production an economically viable option in comparison to the bulk crystalline semiconductor technology industry. A transition from bulk crystalline Si solar cells toward thin-film technologies reduces usage of active material and introduces new concepts based on nanotechnologies. Despite its importance, the scientific development and understanding of new solar cells is not very advanced, and educational resources for specialized engineers and scientists are required. This textbook presents the fundamental scientific aspects of Si thin films growth technology, together with a clear understanding of the properties of the material and how this is employed in new generation photovoltaic solar cells. The textbook is a valuable resource for graduate students working on their theses, young researchers and all people approaching problems and fundamental aspects of advanced photovoltaic conversion.
Today’s solar cell multi-GW market is dominated by crystalline silicon (c-Si) wafer technology, however new cell concepts are entering the market. One very promising solar cell design to answer these needs is the silicon hetero-junction solar cell, of which the emitter and back surface field are basically produced by a low temperature growth of ultra-thin layers of amorphous silicon. In this design, amorphous silicon (a-Si:H) constitutes both „emitter“ and „base-contact/back surface field“ on both sides of a thin crystalline silicon wafer-base (c-Si) where the electrons and holes are photogenerated; at the same time, a-Si:H passivates the c-Si surface. Recently, cell efficiencies above 23% have been demonstrated for such solar cells. In this book, the editors present an overview of the state-of-the-art in physics and technology of amorphous-crystalline heterostructure silicon solar cells. The heterojunction concept is introduced, processes and resulting properties of the materials used in the cell and their heterointerfaces are discussed and characterization techniques and simulation tools are presented.
This book, first published in 2001, provides an international forum to exchange research results on topics ranging from silicon thin-film physics and chemistry, to novel device design and engineering. It covers all aspects of hydrogenated amorphous silicon (a-Si:H) science and technology, and is the fourth consecutive volume in the series to cover heterogeneous silicon film materials, including the nanocrystalline, microcrystalline, and polycrystalline films. A special 'Millennium Session' celebrating the most important achievements of the last three decades in the field of amorphous and microcrystalline silicon thins films, is featured. Topics include: amorphous film growth and properties; nanocrystalline/microcrystalline film growth and properties; ordering, ordering transitions and photocrystalline films: polycrystalline films, epitaxial growth and properties; catalytic/hot-wire CVD - amorphous to polycrystalline films; implantation, annealing and crystallization; structure and hydrogen; band, band tails and defect states; metastability and equilibration; thin-film transistors, displays and imagers; thin-film solar cells and solar-cell structures; amorphous silicon detectors and other devices; and heterogeneous silicon transport and device applications.
Photovoltaic technology has now developed to the extent that it is close to fulfilling the vision of a "solar-energy world," as devices based on this technology are becoming efficient, low-cost and durable. This book provides a comprehensive treatment of thin-film silicon, a prevalent PV material, in terms of its semiconductor nature, startin
Solar cells are photovoltaic devices that convert the energy of light to electricity by the photovoltaic effect. Crystalline silicon-based solar cells are the most dominant solar cells in the market today due to the high efficiency and relatively low cost. However, the cost of such solar cell is still high due to the large amount of material that is consumed in fabricating such a device. Polycrystalline/amorphous thin films and nanomaterial technologies have emerged to reduce the high cost of c-Si based solar cells and increase the efficiency. In this research, we combined these two technologies to propose and fabricate silicon nanowires (SiNWs)/amorphous Silicon (a-Si) composite solar cell structure at low temperatures using heavily doped polycrystalline silicon/glass as a substrate. Silicon Nanowire (SiNW) is one of the promising 1D semiconductor nanomaterial which has recently attracted significant attention due to its potential applications in many fields, including photovoltaic (PV) solar cells. SiNW is a term that is used widely to describe a rod with a diameter of between 1 to 100 nm and length of several microns. The vertical array geometry of such a device has great advantages in increasing the efficiency of solar cells due to its high light absorption and efficient light scattering. Replacing the silicon with polycrystalline silicon that was fabricated on glass substrate by means of aluminum induced crystallization method of amorphous silicon is considered a significant step in reducing the cost since glass is a cheaper material. In this research, heavily doped polycrystalline (p+ polySi/ITO/glass) silicon film was fabricated successfully by the means of aluminum induced crystallization of a-Si on ITO/glass substrate. Raman spectroscope, optical microscope, Hall Effect measurement, and SEM were used for the characterizing the (p+ polySi/ITO/glass). P-type SiNW were grown successfully in the PECVD system on silicon, a-Si/ITO/glass, and p+ polySi/ITO/glass substrates using Au nanoparticles as a catalyst at temperatures between (310°C and 346°C). It is to be noted that this temperature range is still lower than the eutectic temperature of Au-Si (363°C). SEM and TEM systems were used to characterize the SiNW on c-Si and p+ polySi/ITO/glass substrates.