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Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.
The fifth in this series of conferences was held in Santander, Spain from 6 to 10 September 1993, and was attended by workers from industry and research institutes worldwide. Device yield is a crucial factor for determining the choice of semiconducting material made by manufacturers, and that choice is based upon a knowledge of how defects might affect a particular substrate, epilayer or base material. The DRIP conference series was instigated to address the mapping of these technologically important defects. Topics covered at the meeting included silicon, and compound semiconductor substrates and epilayers. Methods for defect recognition included tunelling microscopy, inelastic light scattering (Raman), elastic light scattering, photoluminescence mapping, defect characterization, optical probe beams, and effects of defects on devices. The meeting focused in particular on the microscopic nature of as-grown defects: their distribution as a function of growth conditions, and their redistribution under subsequent heat treatments. The conference dealt with the increasing number and sophistication of visualization techniques which map physical properties of defects, and which may in future permit better control of defect engineering. Researchers in solid state or device physics, or electrical engineering will find this volume an invaluable, up to date reference on the latest techniques for the identification of defects, developments in their control, implications for device fabrication, and future directions for the analysis and mapping of semiconductors.
The systematic study of defects in semiconductors began in the early fifties. FrQm that time on many questions about the defect structure and properties have been an swered, but many others are still a matter of investigation and discussion. Moreover, during these years new problems arose in connection with the identification and char acterization of defects, their role in determining transport and optical properties of semiconductor materials and devices, as well as from the technology of the ever in creasing scale of integration. This book presents to the reader a view into both basic concepts of defect physics and recent developments of high resolution experimental techniques. The book does not aim at an exhaustive presentation of modern defect physics; rather it gathers a number of topics which represent the present-time research in this field. The volume collects the contributions to the Advanced Research Workshop "Point, Extended and Surface Defects in Semiconductors" held at the Ettore Majo rana Centre at Erice (Italy) from 2 to 7 November 1988, in the framework of the International School of Materials Science and Technology. The workshop has brought together scientists from thirteen countries. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.
This volume is a collection of 96 papers presented at the above Conference. The scope of the work includes optical and electrical methods as well as techniques for structural and compositional characterization. The contributed papers report on topics such as X-ray diffraction, TEM, depth profiling, photoluminescence, Raman scattering and various electrical methods. Of particular interest are combinations of different techniques providing complementary information. The compound semiconductors reviewed belong mainly to the III-V and III-VI families. The papers in this volume will provide a useful reference on the implications of new technologies in the characterization of compound semiconductors.
Space science in China is one of the most active areas in modern science, and China has played a dynamic and steadily increasing role in this field since the 1960s. Until recently, however, activity in China was a mystery to the rest of the world. With the commercial importance of space, and the fact that space is now used as a laboratory to carry out various experiments, China has recently emerged as an important international competitor. Space Science in China provides a clear understanding of the latest research and progress in such wide-ranging areas as the development and research in solar-terrestrial science, space astronomy, geoscience, remote sensing, microgravity science, and life science.
Semiconductors and Semimetals