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Over the last few years there has been increasing need for systematic and straregically designed experiments of surface morphology evolution resulting form ion bombardment induced sputtering. Although there is an impressive number of investi gations {1} concerned with semiconductor materials as a result of immediate applications, the most systematic investigations have been conducted with fcc metals with particular interest on single crystal Cu {2,3}. Evidence now exists that within certain para meters (i. e ion species (Ar+), ion energy (20-44 KeV), substrate 2 temperature (80-550° K), dose rate (100-500 gA cm- ) , residual x 5 9 pressure (5 10- to 5x10- mm Hg) and polar and azimuthal angle of ion incidence {4} reproducible surface morphology (etch pits and pyramids) is achieved on the (11 3 1) specific crystallographic orientation. The temporal development of individual surface features was alsoobserved in this laterstudy {4}, by employing an in situ ion source in the scanning electron microscope at Salford, a technique also empolyed in studies of the influence of polar angle of ion incidence {5} and surface contaminants {6} on the topographyof Ar+ bombarded Si. Studies have also been made on the variation of incident ion species with the (11 3 1) Cu surface and it was fully recognized {7} that residual surface contaminants when present could playa major role in dictating the morhological evolution.
Ion Implantation: Science and Technology serves as both an introduction to and tutorial on the science, techniques, and machines involved in ion implantation. The book is divided into two parts. Part 1 discusses topics such as the history of the ion implantation; the different types and purposes of ion implanters; the penetration of energetic ions into solids; damage annealing in silicon; and ion implantation metallurgy. Part 2 covers areas such as ion implementation system concepts; ion sources; underlying principles related to ion optics; and safety and radiation considerations in ion implantation. The text is recommended for engineers who would like to be acquainted with the principles and processes behind ion implantation or make studies on the field.
The first edition of this title has become a well-known reference book on ion sources. The field is evolving constantly and rapidly, calling for a new, up-to-date version of the book. In the second edition of this significant title, editor Ian Brown, himself an authority in the field, compiles yet again articles written by renowned experts covering various aspects of ion source physics and technology. The book contains full chapters on the plasma physics of ion sources, ion beam formation, beam transport, computer modeling, and treats many different specific kinds of ion sources in sufficient detail to serve as a valuable reference text.
Ion beam of various energies is a standard research tool in many areas of science, from basic physics to diverse areas in space science and technology, device fabrications, materials science, environment science, and medical sciences. It is an advance and versatile tool to frequently discover applications across a broad range of disciplines and fields. Moreover, scientists are continuously improving the ion beam sources and accelerators to explore ion beam at the forefront of scientific endeavours. This book provides a glance view on MeV ion beam applications, focused ion beam generation and its applications as well as practical applications of ion implantation.
The Handbook of Ion Sources delivers the data needed for daily work with ion sources. It also gives information for the selection of a suitable ion source and ion production method for a specific application. The Handbook concentrates on practical aspects and introduces the principle function of ion sources. The basic plasma parameters are defined and discussed. The working principles of various ion sources are explained, and examples of each type of ion source are presented with their operational data. Tables of ion current for various elements and charge states summarize the performance of different ion sources. The problems related to the production of ions of non-gaseous elements are detailed, and data on useful materials for evaporation and ion source construction are summarized. Additional chapters are dedicated to extraction and beam formation, ion beam diagnosis, ion source electronics, and computer codes for extraction, acceleration, and beam transport. Emittance and brilliance are described and space charge effects and neutralization discussed. Various methods for the measurement of current, profile, emittance, and time structure are presented and compared. Intensity limits for these methods are provided for different ion energies. Typical problems related to the operation of ion source plasmas are discussed and practical examples of circuits are given. The influence of high voltage on ion source electronics and possibilities for circuit protection are covered. The generation of microwaves and various microwave equipment are described and special problems related to microwave operation are summarized. The Handbook of Ion Sources is a valuable reference on the subject, of benefit to practitioners and graduate students interested in accelerators, ion implantation, and ion beam techniques.
The aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas as diverse as materials science, device production and advanced ion implanters.The contents open with a paper on the future developments of the microelectronics industry in Europe within the framework of the global competition. The subsequent invited and oral presentations cover in detail the following areas: trends in processing and devices, ion-solid interaction, materials science issues, advanced implanter systms, process control and yield, future trends and applications.
The conference is focused on recent advances and emerging technologies in semiconductor processing before, during and after ion implantation. The content encompasses fundamental physical understanding, common and novel applications as well as equipment issues, maintenance and design. The primary audience is process engineers in the microelectronics industry. Additional contributions come from academia and other industry segments (automotive, aerospace, and medical device manufacturing).
Leading readers through an extensive compilation of surface modification reactions and processes for specific tribological results, this reference compiles detailed studies on various residual stresses, reaction processes and mechanisms, heat treatment methods, plasma-based techniques, and more, for a solid understanding of surface structural changes that occur during various engineering procedures. This unique book explores topics previously ignored in other texts on surface engineering and tribology, offers guidelines for the consideration and design of wear life and frictional performance, and sections on laser impingement and nanometer scale surface modification.
A comprehensive review of ion beam application in modern materials research is provided, including the basics of ion beam physics and technology. The physics of ion-solid interactions for ion implantation, ion beam synthesis, sputtering and nano-patterning is treated in detail. Its applications in materials research, development and analysis, developments of special techniques and interaction mechanisms of ion beams with solid state matter result in the optimization of new material properties, which are discussed thoroughly. Solid-state properties optimization for functional materials such as doped semiconductors and metal layers for nano-electronics, metal alloys, and nano-patterned surfaces is demonstrated. The ion beam is an important tool for both materials processing and analysis. Researchers engaged in solid-state physics and materials research, engineers and technologists in the field of modern functional materials will welcome this text.