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This volume is based on papers presented at the International Symposium on X-Ray Microscopy held at Brookhaven National Laboratory, Upton NY, August 31-September 4, 1987. Previous recent symposia on the sub ject were held in New York in 1979, Gottingen in 1983 and Taipei in 1986. Developments in x-ray microscopy continue at a rapid pace, with im portant advances in all major areas: x-ray sources, optics and components, and microscopes and imaging systems. Taken as a whole, the work pre sented here emphasizes three major directions: (a) improvements in the capability and image-quality of x-ray microscopy, expressed principally in systems attached to large, high-brightness x-ray sources; (b) greater access to x-ray microscopy, expressed chiefly in systems employing small, often pulsed, x-ray sources; and (c) increased rate of exploration of applications of x-ray microscopy. The number of papers presented at the symposium has roughly dou bled compared with that of its predecessors. While we are delighted at this growth as a manifestation of vitality and rapid growth of the field, we did have to ask the authors to limit the length of their papers and to submit them in camera-ready form. We thank the authors for their con tributions and for their efforts in adhering to the guidelines on manuscript preparation.
A complete introduction to x-ray microscopy, covering optics, 3D and chemical imaging, lensless imaging, radiation damage, and applications.
This book has evolved by processes of selection and expansion from its predecessor, Practical Scanning Electron Microscopy (PSEM), published by Plenum Press in 1975. The interaction of the authors with students at the Short Course on Scanning Electron Microscopy and X-Ray Microanalysis held annually at Lehigh University has helped greatly in developing this textbook. The material has been chosen to provide a student with a general introduction to the techniques of scanning electron microscopy and x-ray microanalysis suitable for application in such fields as biology, geology, solid state physics, and materials science. Following the format of PSEM, this book gives the student a basic knowledge of (1) the user-controlled functions of the electron optics of the scanning electron microscope and electron microprobe, (2) the characteristics of electron-beam-sample inter actions, (3) image formation and interpretation, (4) x-ray spectrometry, and (5) quantitative x-ray microanalysis. Each of these topics has been updated and in most cases expanded over the material presented in PSEM in order to give the reader sufficient coverage to understand these topics and apply the information in the laboratory. Throughout the text, we have attempted to emphasize practical aspects of the techniques, describing those instru ment parameters which the microscopist can and must manipulate to obtain optimum information from the specimen. Certain areas in particular have been expanded in response to their increasing importance in the SEM field. Thus energy-dispersive x-ray spectrometry, which has undergone a tremendous surge in growth, is treated in substantial detail.
Three-dimensional x-ray diffraction (3DXRD) microscopy is a novel experimental method for structural characterisation of polycrystalline materials. The position, morphology, phase, strain and crystallographic orientation of hundreds of grains or sub-grain embedded within mm-cm thick specimens can be determined simultaneously. Furthermore, the dynamics of the individual structural elements can be monitored during typical processes such as deformation or annealing. The book gives a comprehensive account of the methodology followed by a summary of selected applications. The method is presented from a mathematical/crystallographic point-of-view but with sufficient hands-on details to enable the reader to plan his or her own experiments. The scope of applications includes work in materials science and engineering, geophysics, geology, chemistry and pharmaceutical science.
This book has its origins in the intensive short courses on scanning elec tron microscopy and x-ray microanalysis which have been taught annually at Lehigh University since 1972. In order to provide a textbook containing the materials presented in the original course, the lecturers collaborated to write the book Practical Scanning Electron Microscopy (PSEM), which was published by Plenum Press in 1975. The course con tinued to evolve and expand in the ensuing years, until the volume of material to be covered necessitated the development of separate intro ductory and advanced courses. In 1981 the lecturers undertook the project of rewriting the original textbook, producing the volume Scan ning Electron Microscopy and X-Ray Microanalysis (SEMXM). This vol ume contained substantial expansions of the treatment of such basic material as electron optics, image formation, energy-dispersive x-ray spectrometry, and qualitative and quantitative analysis. At the same time, a number of chapters, which had been included in the PSEM vol ume, including those on magnetic contrast and electron channeling con trast, had to be dropped for reasons of space. Moreover, these topics had naturally evolved into the basis of the advanced course. In addition, the evolution of the SEM and microanalysis fields had resulted in the devel opment of new topics, such as digital image processing, which by their nature became topics in the advanced course.
This volume is based on papers presented at the International Symposium on X-Ray Microscopy held at Brookhaven National Laboratory, Upton NY, August 31-September 4, 1987. Previous recent symposia on the sub ject were held in New York in 1979, Gottingen in 1983 and Taipei in 1986. Developments in x-ray microscopy continue at a rapid pace, with im portant advances in all major areas: x-ray sources, optics and components, and microscopes and imaging systems. Taken as a whole, the work pre sented here emphasizes three major directions: (a) improvements in the capability and image-quality of x-ray microscopy, expressed principally in systems attached to large, high-brightness x-ray sources; (b) greater access to x-ray microscopy, expressed chiefly in systems employing small, often pulsed, x-ray sources; and (c) increased rate of exploration of applications of x-ray microscopy. The number of papers presented at the symposium has roughly dou bled compared with that of its predecessors. While we are delighted at this growth as a manifestation of vitality and rapid growth of the field, we did have to ask the authors to limit the length of their papers and to submit them in camera-ready form. We thank the authors for their con tributions and for their efforts in adhering to the guidelines on manuscript preparation.
Scanning electr on microscopy (SEM) and x-ray microanalysis can produce magnified images and in situ chemical information from virtually any type of specimen. The two instruments generally operate in a high vacuum and a very dry environment in order to produce the high energy beam of electrons needed for imaging and analysis. With a few notable exceptions, most specimens destined for study in the SEM are poor conductors and composed of beam sensitive light elements containing variable amounts of water. In the SEM, the imaging system depends on the specimen being sufficiently electrically conductive to ensure that the bulk of the incoming electrons go to ground. The formation of the image depends on collecting the different signals that are scattered as a consequence of the high energy beam interacting with the sample. Backscattered electrons and secondary electrons are generated within the primary beam-sample interactive volume and are the two principal signals used to form images. The backscattered electron coefficient ( ? ) increases with increasing atomic number of the specimen, whereas the secondary electron coefficient ( ? ) is relatively insensitive to atomic number. This fundamental diff- ence in the two signals can have an important effect on the way samples may need to be prepared. The analytical system depends on collecting the x-ray photons that are generated within the sample as a consequence of interaction with the same high energy beam of primary electrons used to produce images.
Meeting the long-felt need for in-depth information on one of the most advanced material characterization methods, a top team of editors and authors from highly prestigious facilities and institutions covers a range of synchrotron techniques that have proven useful for materials research. Following an introduction to synchrotron radiation and its sources, the second part goes on to describe the various techniques that benefit from this especially bright light, including X-ray absorption, diffraction, scattering, imaging, and lithography. The thrid and final part provides an overview of the applications of synchrotron radiation in materials science. bridging the gap between specialists in synchrotron research and material scientists, this is a unique and indispensable resource for academic and industrial researchers alike.
This fully corrected second impression of the classic 2006 text on microscopy runs to more than 1,000 pages and covers up-to-the-minute developments in the field. The two-volume work brings together a slew of experts who present comprehensive reviews of all the latest instruments and new versions of the older ones, as well as their associated operational techniques. The chapters draw attention to their principal areas of application. A huge range of subjects are benefiting from these new tools, including semiconductor physics, medicine, molecular biology, the nanoworld in general, magnetism, and ferroelectricity. This fascinating book will be an indispensable guide for a wide range of scientists in university laboratories as well as engineers and scientists in industrial R&D departments.
This detailed, comprehensive book describes the fundamental properties of soft X-rays and extreme ultraviolet (EUV) radiation and discusses their applications in a wide variety of fields, including EUV lithography for semiconductor chip manufacture and soft X-ray biomicroscopy. The author begins by presenting the relevant basic principles such as radiation and scattering, wave propagation, diffraction, and coherence. He then goes on to examine a broad range of phenomena and applications. The topics covered include spectromicroscopy, EUV astronomy, synchrotron radiation, and soft X-ray lasers. The author also provides a wealth of useful reference material such as electron binding energies, characteristic emission lines and photo-absorption cross-sections. The book will be of great interest to graduate students and researchers in engineering, physics, chemistry, and the life sciences. It will also appeal to practising engineers involved in semiconductor fabrication and materials science.