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The present Volume of Lecture Notes in Chemistry fulfils one of the stated aims of the Series, that of disseminating results discussed and evaluated at recent scientific international conferences; in our case a Satellite Meeting of the well-known Conference Series on the Physics of Electronic and Atomic a:ollisions, the XIIIth ICPEAC, which took place in Castelgandolfo, near Rome, from 23 to 25 July 1983. Since the Satellite Meeting attracted a widely international and in­ terdisciplina~y audience whose general consensus was one of warm appro­ val for the scie'ntific level achieved during it, we hope that the pre­ sent collection of essays will be met by similar success, thus warran­ ting our having asked the participants to work still further for us. Before turning to their efforts, however, it is only just to thank the Italian National Research Council (Chemistry Committee and Physics Committee), the University of Rome, the C.N.R. Tnstitute H.A.I. of the Rome Research Area (Montelibretti) and the E.N.E.A. Organisation for their financial aid, which made the Castelgandolfo Meeting possible. We warmly acknowledge the professional expertise of the staff at Villa Montecucco and for their collaboration we are grateful to: Rita Abbasciano, Catherine Cajone, Lucilla Crescentini, .Roberta Fantoni, An­ tonio Montani, Amedeo Palma, Rosario Platania, Maurizio Venanzi.
Electron microscopy has revolutionized our understanding the extraordinary intellectual demands required of the mi of materials by completing the processing-structure-prop croscopist in order to do the job properly: crystallography, erties links down to atomistic levels. It now is even possible diffraction, image contrast, inelastic scattering events, and to tailor the microstructure (and meso structure ) of materials spectroscopy. Remember, these used to be fields in them to achieve specific sets of properties; the extraordinary abili selves. Today, one has to understand the fundamentals ties of modem transmission electron microscopy-TEM of all of these areas before one can hope to tackle signifi instruments to provide almost all of the structural, phase, cant problems in materials science. TEM is a technique of and crystallographic data allow us to accomplish this feat. characterizing materials down to the atomic limits. It must Therefore, it is obvious that any curriculum in modem mate be used with care and attention, in many cases involving rials education must include suitable courses in electron mi teams of experts from different venues. The fundamentals croscopy. It is also essential that suitable texts be available are, of course, based in physics, so aspiring materials sci for the preparation of the students and researchers who must entists would be well advised to have prior exposure to, for carry out electron microscopy properly and quantitatively.
This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those interested in silicon devices. Each chapter ends with exercises that have been designed to reinforce concepts, to complement arguments or derivations, and to emphasize the nature of approximations by critically evaluating realistic conditions.One of the most rigorous treatments of compound semiconductor device physics yet published**Essential reading for a complete understanding of modern devices**Includes chapter-ending exercises to facilitate understanding
Quantum Heterostructures provides a detailed description of the key physical and engineering principles of quantum semiconductor heterostructures. Blending important concepts from physics, materials science, and electrical engineering, it also explains clearly the behavior and operating features of modern microelectronic and optoelectronic devices. The authors begin by outlining the trends that have driven development in this field, most importantly the need for high-performance devices in computer, information, and communications technologies. They then describe the basics of quantum nanoelectronics, including various transport mechanisms. In the latter part of the book, they cover novel microelectronic devices, and optical devices based on quantum heterostructures. The book contains many homework problems and is suitable as a textbook for undergraduate and graduate courses in electrical engineering, physics, or materials science. It will also be of great interest to those involved in research or development in microelectronic or optoelectronic devices.
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Since the early days of modem physics spectroscopic techniques have been employed as a powerful tool to assess existing theoretical models and to uncover novel phenomena that promote the development of new concepts. Conventionally, the system to be probed is prepared in a well-defined state. Upon a controlled perturbation one measures then the spectrum of a single particle (electron, photon, etc.) emitted from the probe. The analysis of this single particle spectrum yields a wealth of important information on the properties of the system, such as optical and magnetic behaviour. Therefore, such analysis is nowadays a standard tool to investigate and characterize a variety of materials. However, it was clear at a very early stage that real physical compounds consist of many coupled particles that may be excited simultaneously in response to an external perturbation. Yet, the simultaneous (coincident) detection of two or more excited species proved to be a serious technical obstacle, in particular for extended electronic systems such as surfaces. In recent years, however, coincidence techniques have progressed so far as to image the multi-particle excitation spectrum in an impressive detail. Correspondingly, many-body theoretical concepts have been put forward to interpret the experimental findings and to direct future experimental research. This book gives a snapshot of the present status of multi-particle coincidence studies both from a theoretical and an experimental point of view. It also includes selected topical review articles that highlight the achievements and the power of coincident techniques.
Advances in Atomic and Molecular Physics