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This book presents an updated selection of the most representative contributions to the 2nd and 3rd IEEE Workshops on Signal Propagation on Interconnects (SPI) which were held in Travemtinde (Baltic See Side), Germany, May 13-15, 1998, and in Titisee-Neustadt (Black Forest), Germany, May 19-21, 1999. This publication addresses the need of developers and researchers in the field of VLSI chip and package design. It offers a survey of current problems regarding the influence of interconnect effects on the electrical performance of electronic circuits and suggests innovative solutions. In this sense the present book represents a continua tion and a supplement to the first book "Signal Propagation on Interconnects", Kluwer Academic Publishers, 1998. The papers in this book cover a wide area of research directions: Beneath the des cription of general trends they deal with the solution of signal integrity problems, the modeling of interconnects, parameter extraction using calculations and measurements and last but not least actual problems in the field of optical interconnects.
Copper (Cu) has been used as an interconnection material in the semiconductor industry for years owing to its best balance of conductivity and performance. However, it is running out of steam as it is approaching its limits with respect to electrical performance and reliability. Graphene is a non-metal material, but it can help to improve electromigration (EM) performance of Cu because of its excellent properties. Combining graphene with Cu for very large-scale integration (VLSI) interconnects can be a viable solution. The incorporation of graphene into Cu allows the present Cu fabrication back-end process to remain unaltered, except for the small step of “inserting” graphene into Cu. Therefore, it has a great potential to revolutionize the VLSI integrated circuit (VLSI-IC) industry and appeal for further advancement of the semiconductor industry. This book is a compilation of comprehensive studies done on the properties of graphene and its synthesis methods suitable for applications of VLSI interconnects. It introduces the development of a new method to synthesize graphene, wherein it not only discusses the method to grow graphene over Cu but also allows the reader to know how to optimize graphene growth, using statistical design of experiments (DoE), on Cu interconnects in order to obtain good-quality and reliable interconnects. It provides a basic understanding of graphene–Cu interaction mechanism and evaluates the electrical and EM performance of graphenated Cu interconnects.
Copper (Cu) has been used as an interconnection material in the semiconductor industry for years owing to its best balance of conductivity and performance. However, it is running out of steam as it is approaching its limits with respect to electrical performance and reliability. Graphene is a non-metal material, but it can help to improve electromigration (EM) performance of Cu because of its excellent properties. Combining graphene with Cu for very large-scale integration (VLSI) interconnects can be a viable solution. The incorporation of graphene into Cu allows the present Cu fabrication back-end process to remain unaltered, except for the small step of “inserting” graphene into Cu. Therefore, it has a great potential to revolutionize the VLSI integrated circuit (VLSI-IC) industry and appeal for further advancement of the semiconductor industry. This book is a compilation of comprehensive studies done on the properties of graphene and its synthesis methods suitable for applications of VLSI interconnects. It introduces the development of a new method to synthesize graphene, wherein it not only discusses the method to grow graphene over Cu but also allows the reader to know how to optimize graphene growth, using statistical design of experiments (DoE), on Cu interconnects in order to obtain good-quality and reliable interconnects. It provides a basic understanding of graphene–Cu interaction mechanism and evaluates the electrical and EM performance of graphenated Cu interconnects.
State-of-the-art methods and current perspectives on interconnect The irrepressible march toward smaller and faster integrated circuits has made interconnect a hot topic for semiconductor research. The effects of wire size, topology construction, and network design on system performance and reliability have all been thoroughly investigated in recent years. Interconnect Analysis and Synthesis provides CAD researchers and engineers with powerful, state-of-the-art tools for the analysis, design, and optimization of interconnect. It brings together a wealth of information previously scattered throughout the literature, explaining in depth available analysis techniques and presenting a range of CAD algorithms for synthesizing and optimizing interconnect. Along with examples and results from the semiconductor industry and 150 illustrations, this practical work features: Models for interconnect as well as devices and the impact of scaling trends Modern analysis techniques, from matrix reduction and moment matching to transmission-line analysis An overview of the effects of inductance on on-chip interconnect Flexible CAD algorithms that can be generalized for different needs, from buffer insertion to wire sizing to routing topology Emphasis on realistic problem formulations, addressing key design tradeoffs such as those between area and performance
Copper (Cu) has been used as an interconnection material in the semiconductor industry for years owing to its best balance of conductivity and performance. However, it is running out of steam as it is approaching its limits with respect to electrical performance and reliability. Graphene is a non-metal material, but it can help to improve electromigration (EM) performance of Cu because of its excellent properties. Combining graphene with Cu for very large-scale integration (VLSI) interconnects can be a viable solution. The incorporation of graphene into Cu allows the present Cu fabrication back-end process to remain unaltered, except for the small step of “inserting” graphene into Cu. Therefore, it has a great potential to revolutionize the VLSI integrated circuit (VLSI-IC) industry and appeal for further advancement of the semiconductor industry. This book is a compilation of comprehensive studies done on the properties of graphene and its synthesis methods suitable for applications of VLSI interconnects. It introduces the development of a new method to synthesize graphene, wherein it not only discusses the method to grow graphene over Cu but also allows the reader to know how to optimize graphene growth, using statistical design of experiments (DoE), on Cu interconnects in order to obtain good-quality and reliable interconnects. It provides a basic understanding of graphene–Cu interaction mechanism and evaluates the electrical and EM performance of graphenated Cu interconnects.