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The challenge of improving livelihoods in the remote mountains of northern Pakistan provides the backdrop for a series of reflective studies about social and rural development, featuring the analyses of multi-dimensional poverty, gender, microfinance, collective action and institutional options for natural resource management.
Heat in most semiconductor materials, including the traditional group IV elements (Si, Ge, diamond), III–V compounds (GaAs, wide-bandgap GaN), and carbon allotropes (graphene, CNTs), as well as emerging new materials like transition metal dichalcogenides (TMDCs), is stored and transported by lattice vibrations (phonons). Phonon generation through interactions with electrons (in nanoelectronics, power, and nonequilibrium devices) and light (optoelectronics) is the central mechanism of heat dissipation in nanoelectronics. This book focuses on the area of thermal effects in nanostructures, including the generation, transport, and conversion of heat at the nanoscale level. Phonon transport, including thermal conductivity in nanostructured materials, as well as numerical simulation methods, such as phonon Monte Carlo, Green’s functions, and first principles methods, feature prominently in the book, which comprises four main themes: (i) phonon generation/heat dissipation, (i) nanoscale phonon transport, (iii) applications/devices (including thermoelectrics), and (iv) emerging materials (graphene/2D). The book also covers recent advances in nanophononics—the study of phonons at the nanoscale. Applications of nanophononics focus on thermoelectric (TE) and tandem TE/photovoltaic energy conversion. The applications are augmented by a chapter on heat dissipation and self-heating in nanoelectronic devices. The book concludes with a chapter on thermal transport in nanoscale graphene ribbons, covering recent advances in phonon transport in 2D materials. The book will be an excellent reference for researchers and graduate students of nanoelectronics, device engineering, nanoscale heat transfer, and thermoelectric energy conversion. The book could also be a basis for a graduate special topics course in the field of nanoscale heat and energy.
This book compiles available knowledge of the response of mountain ecosystems to recent climate and land use change and intends to bridge the gap between science, policy and the community concerned. The chapters present key concepts, major drivers and key processes of mountain response, providing transdisciplinary orientation to mountain studies incorporating experiences of academics, community leaders and policy-makers from developed and less developed countries. The book chapters are arranged in two sections. The first section concerns the response processes of mountain environments to climate change. This section addresses climate change itself (past, current and future changes of temperature and precipitation) and its impacts on the cryosphere, hydrosphere, biosphere, and human-environment systems. The second section focuses on the response processes of mountain environments to land use/land cover change. The case studies address effects of changing agriculture and pastoralism, forest/water resources management and urbanization processes, landscape management, and biodiversity conservation. The book is designed as an interdisciplinary publication which critically evaluates developments in mountains of the world with contributions from both social and natural sciences.
This book contains the lectures delivered at the NATO Advanced Research Workshop on the "Intersubband Transistions in Quantum Wells" held in Cargese, France, between the t 9 h and the 14th of September 1991. The urge for this Workshop was justified by the impressive growth of work dealing with this subject during the last two or three years. Indeed, thanks to recent progresses of epitaxial growth techniques, such as Molecular Beam Epitaxy, it is now possible to realize semiconductor layers ( e.g. GaAs) with thicknesses controlled within one atomic layer, sandwiched between insulating layers (e.g. AlGaAs). When the semiconducting layer is very thin, i.e. less than 15 nm, the energy of the carriers corresponding to their motion perpendicular to these layers is quantized, forming subbands of allowed energies. Because of the low effective masses in these semiconducting materials, the oscillator strengths corresponding to intersubband transitions are extremely large and quantum optical effects become giant in the 5 - 20 ~ range: photoionization, optical nonlinearities, ... Moreover, a great theoretical surprise is that - thanks to the robustness of the effective mass theory - these quantum wells are a real life materialization of our old text book one-dimensional quantum well ideal. Complex physical phenomena may then be investigated on a simple model system.
Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: • Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials • All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework • Predictive capabilities of device models, discussed with systematic comparisons to experimental results
Since the early 1990s, quantum dots have become an integral part of research in solid state physics for their fundamental properties that mimic the behavior of atoms and molecules on a larger scale. They also have a broad range of applications in engineering and medicines for their ability to tune their electronic properties to achieve specific functions. This book is a compilation of articles that span 20 years of research on comprehensive physical models developed by their authors to understand the detailed properties of these quantum objects and to tailor them for specific applications. Far from being exhaustive, this book focuses on topics of interest for solid state physicists, materials scientists, engineers, and general readers, such as quantum dots and nanocrystals for single-electron charging with applications in memory devices, quantum dots for electron-spin manipulation with applications in quantum information processing, and finally self-assembled quantum dots for applications in nanophotonics.
Modern Electronic Structure Theory provides a didactically oriented description of the latest computational techniques in electronic structure theory and their impact in several areas of chemistry. The book is aimed at first year graduate students or college seniors considering graduate study in computational chemistry, or researchers who wish to acquire a wider knowledge of this field.
Advances in nanoscale science show that the properties of many materials are dominated by internal structures. In molecular cases, such as window glass and proteins, these internal structures obviously have a network character. However, in many partly disordered electronic materials, almost all attempts at understanding are based on traditional continuum models. This workshop focuses first on the phase diagrams and phase transitions of materials known to be composed of molecular networks. These phase properties characteristically contain remarkable features, such as intermediate phases that lead to reversibility windows in glass transitions as functions of composition. These features arise as a result of self-organization of the internal structures of the intermediate phases. In the protein case, this self-organization is the basis for protein folding. The second focus is on partly disordered electronic materials whose phase properties exhibit the same remarkable features. In fact, the phenomenon of High Temperature Superconductivity, discovered by Bednorz and Mueller in 1986, and now the subject of 75,000 research papers, also arises from such an intermediate phase. More recently discovered electronic phenomena, such as giant magnetoresistance, also are made possible only by the existence of such special phases. This book gives an overview of the methods and results obtained so far by studying the characteristics and properties of nanoscale self-organized networks. It demonstrates the universality of the network approach over a range of disciplines, from protein folding to the newest electronic materials.