Published: 1998
Total Pages: 316
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The proceedings of the Fourth International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS '98) cover all aspects of ultra-clean Si-technology: cleaning, contamination control, Si-surface chemistry and topography, and its relationship to device performance and process yield. New areas of concern include: cleaning at the interconnect level, resist strip and polymer removal (dry and wet), cleaning and contamination aspects of metallization, wafer backside cleaning and cleaning after Chemical-Mechanical-Polishing (CMP). The large number of papers dealing with wet cleaning processes makes it clear that this is still the dominant technology, in spite of the fact that interesting new results have been obtained by using dry cleaning processes. Another important topic at this conference was the use of ozonated DI-water as a replacement for hydrogen peroxide, or even sulfuric-based mixtures, thus offering potentially great economic and environmental savings. Altogether, the 71 contributions presented at the symposium represent a timely and authoritative assessment of the state of the art of this very interesting field.