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This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.
The objective of the contract was the investigation of hot electron transport on a microscopic scale in metal oxide semiconductor (MOS) structures in order to assess intrinsic transport properties in SiO2 and defect generation processes that lead to oxide failure. The technique used to achieve microscopic resolution was Ballistic Electron Emission Microscopy (BEEM), a variant of the Scanning Tunneling Microscope (STM). In BEEM, use is made of the nearly monochromatic and highly forward focused electron beam of the STM to inject hot electrons through the thin metal 'gate' and into the conduction band of the SiO2. The measured minimum electron energy required to achieve injection and subsequent detection in the Si defines the oxide barrier potential. A research highlight was the demonstration of image force effects in electron transport through MOS structures. The observation was made that the oxide barrier potential decreased with the application of an oxide field. This effect was attributed to screening by metal electrons and was described by classical image force powering, an often-ignored concept by the MOS science and engineering community. The results led to a new 'dynamic' value for the dielectric constant of SiO2, which was confirmed by theoretical modeling of the MOS transport process. Monte Carlo simulations were made of the spreading of the beam as it traverses the oxide. The inclusion of image force effects was necessary for agreement with experiment.
The current transport mechanisms in metal-oxide-semiconductor (MOS) capacitors have been studied. The devices used in this study have characterized by current-voltage analyses. Physical parameter extractions and computer generated fit methods have been applied to experimental data. Two devices have been investigated: A relatively thick oxide (125 nm) and an ultra-thin oxide (3 nm) MOS structures. The voltage and temperature dependence of these devices have been explained by using present current transport models.
Herein, a program of research is detailed related to transport through the Si metal oxide semiconductor (MOS) quantum dots fabricated in a process flow compatible with modern ULSI (ultra large scale integrated circuit). Silicon quantum dots were fabricated by placing split gates within a MOSFET structure. Quantum dots of several sizes and geometries were fabricated by this process for the purpose of investigating the effects of size and shape on quantized transport through the dots. The transport properties of the different quantum dot sizes and shapes were investigated at low temperatures, and compared to normal MOSFETs fabricated by the same technology. Equilibrium measurements with the device biased in the regime from the onset of weak inversion to just past the onset of strong inversion revealed strongly oscillatory behavior in the tunneling conductance. The conductance peaks appear to map an energy level spectrum in the dot as the inversion and depletion gates are separately swept. Symmetric devices, biased both symmetrically and asymmetrically, show two groups of "branches" which evolve with different slopes in the V[subscript Inv]-V[subscript Depl] plane. An asymmetric device studied shows three groups of branches. In addition, a fine structure is observed in the conductance peak behavior of two devices. This apparent energy level structure is compared to the body of literature on the so-called artificial atoms, as well as self-consistent three dimensional quantum mechanical solutions for the energy levels in the same dot structure, which qualitatively agree with the overall slope of the observed data. However, the calculations reveal only the multiple sets of slopes when asymmetrically biased. These multiple slopes are postulated to arise due to the splitting of the degenerate states of the symmetric structure as the bias makes the structure increasingly asymmetric. Finally, a simplified model is presented which shows how slight asymmetry in the dot confining potential can give rise to both a fine structure and multiple slopes in the branches, and several alternative mechanisms are presented to explain the origin of the fine structure observed.
AMORPHOUS OXIDE SEMICONDUCTORS A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field In Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, the Editors deliver a comprehensive account of the current status of—and latest developments in—transparent oxide semiconductor technology. With contributions from leading international researchers and exponents in the field, this edited volume covers physical fundamentals, thin-film transistor applications, processing, circuits and device simulation, display and memory applications, and new materials relevant to amorphous oxide semiconductors. The book makes extensive use of structural diagrams of materials, energy level and energy band diagrams, device structure illustrations, and graphs of device transfer characteristics, photographs and micrographs to help illustrate the concepts discussed within. It also includes: A thorough introduction to amorphous oxide semiconductors, including discussions of commercial demand, common challenges faced during their manufacture, and materials design Comprehensive explorations of the electronic structure of amorphous oxide semiconductors, structural randomness, doping limits, and defects Practical discussions of amorphous oxide semiconductor processing, including oxide materials and interfaces for application and solution-process metal oxide semiconductors for flexible electronics In-depth examinations of thin film transistors (TFTs), including the trade-off relationship between mobility and reliability in oxide TFTs Perfect for practicing scientists, engineers, and device technologists working with transparent semiconductor systems, Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory will also earn a place in the libraries of students studying oxides and other non-classical and innovative semiconductor devices. WILEY SID Series in Display Technology Series Editor: Ian Sage, Abelian Services, Malvern, UK The Society for Information Display (SID) is an international society which has the aim of encouraging the development of all aspects of the field of information display. Complementary to the aims of the society, the Wiley-SID series is intended to explain the latest developments in information display technology at a professional level. The broad scope of the series addresses all facets of information displays from technical aspects through systems and prototypes to standards and ergonomics.
Metal Oxide-Based Thin Film Structures: Formation, Characterization and Application of Interface-Based Phenomena bridges the gap between thin film deposition and device development by exploring the synthesis, properties and applications of thin film interfaces. Part I deals with theoretical and experimental aspects of epitaxial growth, the structure and morphology of oxide-metal interfaces deposited with different deposition techniques and new developments in growth methods. Part II concerns analysis techniques for the electrical, optical, magnetic and structural properties of thin film interfaces. In Part III, the emphasis is on ionic and electronic transport at the interfaces of Metal-oxide thin films. Part IV discusses methods for tailoring metal oxide thin film interfaces for specific applications, including microelectronics, communication, optical electronics, catalysis, and energy generation and conservation. This book is an essential resource for anyone seeking to further their knowledge of metal oxide thin films and interfaces, including scientists and engineers working on electronic devices and energy systems and those engaged in research into electronic materials. Introduces the theoretical and experimental aspects of epitaxial growth for the benefit of readers new to the field Explores state-of-the-art analysis techniques and their application to interface properties in order to give a fuller understanding of the relationship between macroscopic properties and atomic-scale manipulation Discusses techniques for tailoring thin film interfaces for specific applications, including information, electronics and energy technologies, making this book essential reading for materials scientists and engineers alike
A comprehensive advanced level examination of the transport theory of nanoscale devices Provides advanced level material of electron transport in nanoscale devices from basic principles of quantum mechanics through to advanced theory and various numerical techniques for electron transport Combines several up-to-date theoretical and numerical approaches in a unified manner, such as Wigner-Boltzmann equation, the recent progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations The authors approach the subject in a logical and systematic way, reflecting their extensive teaching and research backgrounds