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The main objective of this comprehensive text is to introduce the students the physics and the operational principles as well as the characteristics, and applications of the microwave semiconductor devices. These devices are making a revolutionary change in the field of communication and radars. As a result of the accelerating rate of growth of microwave technology in research and industry, students, engineers and scientists need to understand the theoretical and experimental design and analysis of these devices. The book also deals with higher frequency microwaves called millimeter waves, which are finding wide applications in ground and satellite communication, radars and missile guidance. Millimeter wave system development is one of the most advanced technologies in radio science, especially in view of the ever increasing demand of communication and saturation of microwave frequency range with increasing number of channels. The book discusses in greater detail about the semiconductor devices such as IMPATT diodes, Gunn diodes, HEMT diodes and FET diodes. It emphasizes on various two and three terminal devices in the microwave and millimeter wave field based on silicon and Groups III-V compound semiconductors. The book is intended to serve as a textbook for undergraduate electronics and electrical engineering students and postgraduate students of physics. It would also be a valuable reference book for professional engineers and physicists.
The Third Edition of the standard textbook and reference in the field of semiconductor devices This classic book has set the standard for advanced study and reference in the semiconductor device field. Now completely updated and reorganized to reflect the tremendous advances in device concepts and performance, this Third Edition remains the most detailed and exhaustive single source of information on the most important semiconductor devices. It gives readers immediate access to detailed descriptions of the underlying physics and performance characteristics of all major bipolar, field-effect, microwave, photonic, and sensor devices. Designed for graduate textbook adoptions and reference needs, this new edition includes: A complete update of the latest developments New devices such as three-dimensional MOSFETs, MODFETs, resonant-tunneling diodes, semiconductor sensors, quantum-cascade lasers, single-electron transistors, real-space transfer devices, and more Materials completely reorganized Problem sets at the end of each chapter All figures reproduced at the highest quality Physics of Semiconductor Devices, Third Edition offers engineers, research scientists, faculty, and students a practical basis for understanding the most important devices in use today and for evaluating future device performance and limitations. A Solutions Manual is available from the editorial department.
We have reached the double conclusion: that invention is choice, that this choice is imperatively governed by the sense of scientific beauty. Hadamard (1945), Princeton University Press, by permission. The great majority of all sources and amplifiers of microwave energy, and all devices for receiving or detecting microwaves, use a semiconductor active element. The development of microwave semiconductor devices, de scribed in this book, has proceeded from the simpler, two-terminal, devices such as GUNN or IMPATT devices, which originated in the 1960s, to the sophisticated monolithic circuit MESFET three-terminal active elements, of the 1980s and 1990s. The microwave field has experienced a renais sance in electrical engineering departments in the last few years, and much of this growth has been associated with microwave semiconductor devices. The University of Massachusetts has recently developed a well recognized program in microwave engineering. Much of the momentum for this pro gram has been provided by interaction with industrial companies, and the influx of a large number of industry-supported students. This program had a need for a course in microwave semiconductor devices, which covered the physical aspects, as well as the aspects of interest to the engineer who incorporates such devices in his designs. It was also felt that it would be im portant to introduce the most recently developed devices (HFETs, HBTs, and other advanced devices) as early as possible.
GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.
The past three decades have been a period where useful current and voltage instabilities in solids have progressed from exciting research problems to a wide variety of commercially available devices. Materials and electronics research has led to devices such as the tunnel (Esaki) diode, transferred electron (Gunn) diode, avalanche diodes, real-space transfer devices, and the like. These structures have proven to be very important in the generation, amplification, switching, and processing of microwave signals up to frequencies exceeding 100 GHz. In this treatise we focus on a detailed theoretical understanding of devices of the kind that can be made unstable against circuit oscillations, large amplitude switching events, and in some cases, internal rearrangement of the electric field or current density distribution. The book is aimed at the semiconductor device physicist, engineer, and graduate student. A knowledge of solid state physics on an elementary or introductory level is assumed. Furthermore, we have geared the book to device engineers and physicists desirous of obtaining an understanding substantially deeper than that associated with a small signal equivalent circuit approach. We focus on both analytical and numerical treatment of specific device problems, concerning ourselves with the mechanism that determines the constitutive relation governing the device, the boundary conditions (contact effects), and the effect of the local circuit environment.
A definitive and up-to-date handbook of semiconductor devices Semiconductor devices, the basic components of integrated circuits, are responsible for the rapid growth of the electronics industry over the past fifty years. Because there is a growing need for faster and more complex systems for the information age, existing semiconductor devices are constantly being studied for improvement, and new ones are being continually invented. As a result, a large number of types and variations of devices are available in the literature. The Second Edition of this unique engineering guide continues to be the only available complete collection of semiconductor devices, identifying 74 major devices and more than 200 variations of these devices. As in the First Edition, the value of this text lies in its comprehensive, yet highly readable presentation and its easy-to-use format, making it suitable for a wide range of audiences. Essential information is presented for a quick, balanced overview Each chapter is designed to cover only one specific device, for easy and focused reference Each device is discussed in detail, always including its history, its structure, its characteristics, and its applications The Second Edition has been significantly updated with eight new chapters, and the material rearranged to reflect recent developments in the field. As such, it remains an ideal reference source for graduate students who want a quick survey of the field, as well as for practitioners and researchers who need quick access to basic information, and a valuable pragmatic handbook for salespeople, lawyers, and anyone associated with the semiconductor industry.
This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
For some time there has been a need for a semiconductor device book that carries diode and transistor theory beyond an introductory level and yet has space to touch on a wider range of semiconductor device principles and applica tions. Such topics are covered in specialized monographs numbering many hun dreds, but the voluminous nature of this literature limits access for students. This book is the outcome of attempts to develop a broad course on devices and integrated electronics for university students at about senior-year level. The edu cational prerequisites are an introductory course in semiconductor junction and transistor concepts, and a course on analog and digital circuits that has intro duced the concepts of rectification, amplification, oscillators, modulation and logic and SWitching circuits. The book should also be of value to professional engineers and physicists because of both, the information included and the de tailed guide to the literature given by the references. The aim has been to bring some measure of order into the subject area examined and to provide a basic structure from which teachers may develop themes that are of most interest to students and themselves. Semiconductor devices and integrated circuits are reviewed and fundamental factors that control power levels, frequency, speed, size and cost are discussed. The text also briefly mentions how devices are used and presents circuits and comments on representative applications. Thus, the book seeks a balance be tween the extremes of device physics and circuit design.