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Explains in detail the basics, theory, design, fabrication, and operation of vertical-cavity surface-emitting lasers. All the chapters are written by pioneers and key experts who have exclusive access to the most up-to-date innovations in the respective fields.
To simulate vertical cavity surface emitting lasers (VCSELs), the authors are developing a three-dimensional, time-dependent field-gain model with absorption in bulk dielectric regions and gain in quantum well regions. Since the laser linewidth is narrow, the bulk absorption coefficient is assumed to be independent of frequency with a value determined by the material and the lattice temperature. In contrast, the frequency-dependent gain regions must be solved consistently in the time domain. Treatment of frequency-dependent media in a finite-difference time-domain code is computationally intensive. However, because the volume of the quantum well regions is small relative to the volume of the multilayer dielectric (MLD) mirror regions, the computational overhead is reasonable. A key issue is the calculation of the fields in the MLD mirror regions. Although computationally intensive, good agreement has been obtained between simulation results and matrix equation solutions for the reflection coefficient, transmission coefficient, and bandwidth of MLD mirrors. The authors discuss the development and testing of the two-dimensional field-gain model. This field-gain model will be integrated with a carrier transport model to form the self-consistent laser code, VCSEL.
A practical, hands-on guidebook for the efficient modeling of VCSELs Vertical Cavity Surface Emitting Lasers (VCSELs) are a unique type of semiconductor laser whose optical output is vertically emitted from the surface as opposed to conventional edge-emitting semiconductor lasers. Complex in design and expensive to produce, VCSELs nevertheless represent an already widely used laser technology that promises to have even more significant applications in the future. Although the research has accelerated, there have been relatively few books written on this important topic. Analysis and Design of Vertical Cavity Surface Emitting Lasers seeks to encapsulate this growing body of knowledge into a single, comprehensive reference that will be of equal value for both professionals and academics in the field. The author, a recognized expert in the field of VCSELs, attempts to clarify often conflicting assumptions in order to help readers achieve the simplest and most efficient VCSEL models for any given problem. Highlights of the text include: * A clear and comprehensive theoretical treatment of VCSELs * Detailed derivations for understanding the operational principles of VCSELs * Mathematical models for the investigation of electrical, optical, and thermal properties of VCSELs * Case studies on the mathematical modeling of VCSELs and the implementation of simulation programs
Broad-area lasers are edge-emitting semiconductor lasers with a wide lateral emission aperture. This feature enables high output powers but also diminishes the lateral beam quality and results in their inherently non-stationary behavior. Research in the area is driven by application, and the main objective is to increase the brightness, which includes both output power and lateral beam quality. To understand the underlying spatio-temporal phenomena and to apply this knowledge in order to reduce costs for brightness optimization, a self-consistent simulation tool taking all essential processes into account is vital. Firstly, in this work a quasi-three-dimensional opto-electronic and thermal model is presented that describes essential qualitative characteristics of real devices well. Time-dependent traveling-wave equations are utilized to characterize the inherently non-stationary optical fields, which are coupled to dynamic rate equations for the excess carriers in the active region. This model is extended by an injection-current-density model to accurately include lateral current spreading and spatial hole burning. Furthermore, a temperature model is presented that includes short-time local heating near the active region as well as the formation of a stationary temperature profile. Secondly, the reasons of brightness degradation, i.e. the origins of power saturation and the spatially modulated field profile, are investigated. And lastly, designs that mitigate those effects limiting the lateral brightness under pulsed and continuous-wave operation are discussed. Amongst those designs a novel “chessboard laser” is presented that utilizes longitudinal-lateral gain-loss modulation and an additional phase tailoring to obtain a very low far-field divergence.
This third edition of “Semiconductor Lasers, Stability, Instability and Chaos” was significantly extended. In the previous edition, the dynamics and characteristics of chaos in semiconductor lasers after the introduction of the fundamental theory of laser chaos and chaotic dynamics induced by self-optical feedback and optical injection was discussed. Semiconductor lasers with new device structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are interesting devices from the viewpoint of chaotic dynamics since they essentially involve chaotic dynamics even in their free-running oscillations. These topics are also treated with respect to the new developments in the current edition. Also the control of such instabilities and chaos control are critical issues for applications. Another interesting and important issue of semiconductor laser chaos in this third edition is chaos synchronization between two lasers and the application to optical secure communication. One of the new topics in this edition is fast physical number generation using chaotic semiconductor lasers for secure communication and development of chaos chips and their application. As other new important topics, the recent advance of new semiconductor laser structures is presented, such as quantum-dot semiconductor lasers, quantum-cascade semiconductor lasers, vertical-cavity surface-emitting lasers and physical random number generation with application to quantum key distribution. Stabilities, instabilities, and control of quantum-dot semiconductor lasers and quantum-cascade lasers are important topics in this field.