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The search to replace the toxic lead telluride (PbTe) alloys for thermoelectric applications in power generation has led to intensive studies of other telluride-based chalcogenide semiconductors. In this context, the binary SnTe has re-emerged over the last years as a promising candidate due to its rock-salt structure and electronic valence band structure similar to PbTe. Indium is a particularly intriguing dopant for SnTe as it leads to the appearance of a resonant level and superconductivity. Another noteworthy chalcogenide semiconductor, InTe has been recently shown to harbor promising thermoelectric properties due to its remarkably very low lattice thermal conductivity. The lack of detailed studies of its transport properties makes this compound a promising area of research in the field of thermoelectrics. In this work, we report on a detailed experimental and theoretical investigations of the transport properties of these two Te-based chalcogenides (XTe; X = Sn, In) in a wide range of temperatures (2 - 800 K). In a first part, the influence of indium on the transport properties of Sn1.03-xInxTe (0 ≤ x ≤ 40 %) is considered. The experimental results are supported by electronic band structure calculations performed using the Korringa-Kohn-Rostoker method with the coherent potential approximation (KKR-CPA). Both experimental and theoretical results demonstrate the resonant nature of In in Sn1.03Te with an optimum doping level of 2% giving the highest thermopower value for this system. Low-temperature transport properties measurements further highlight the complex evolution of the transport properties for low In contents. Investigations performed on InTe were performed on both single-crystalline and polycrystalline samples. A large single crystal of InTe was grown by the vertical Bridgman method. The possibility to control the defect concentration in InTe was considered though the saturation annealing method, carried out on the In-rich and Te-rich side of the solidus. Comparable to the peak ZT of ~ 0.7 at 780 K achieved in single-crystalline InTe within the ab plane, a maximum ZT of ~ 0.9 at 710 K was obtained in polycrystalline InTe.
The data sheets present a compilation of a wide range of electronic properties for lead telluride, tin telluride and the lead-tin-tellurium ternary system. The energy band structure is thoroughly reviewed and included are effective mass and dielectric constant. Electrical properties include mobility, resistivity, lifetime and piezoresistance. The various thermal and magnetic properties such as Debye temperature, thermal conductivity, phonon dispersion and the Seebeck, Nernst and Ettingshausen coefficients are reported. The g-factor and magnetic susceptibility are given. The optical properties, absorption, refractive index and reflectivity are reported; also photoconductivity, photoelectric emission and laser effects. Each property is compiled over the widest possible range of parameters, including bulk and film samples. A data table which includes a wide range of mechanical, physical and thermal properties is included as well as a summary of crystal structure and phase transitions. A general discussion of preparation methods and device applications is given. (Author).
Doping effects and photoconductivity were studied for single crystal films of lead tin telluride (Pb(0.8)Sn(0.2)Te) grown by vapor phase epitaxy. Growth of films was carried out by an evaporation condensation process in which the alloy was evaporated from a polycrystalline source and the vapor was condensed on a barium fluoride substrate. Interesting doping effects were obtained with indium which produces a deep level in the gap with unusual properties. Extensive galvanomagnetic measurements suggest that indium enters as a self-compensating impurity and pins the Fermi level near midgap, in contrast to other Group III elements such as gallium and thallium which dope the material n-type and p-type, respectively. An investigation of the kinetics of photoconductivity revealed that around the 'device temperature' of 77 K, the recombination of excess carriers is thermally activated, but becomes approximately temperature independent below 50 K. These results and the magnitude of the photoconductive life-time lead to the surprising conclusion that contrary to prevailing opinion, Auger recombination is not the dominant recombination mechanism for samples with carrier concentration in the 1-10/10 to the 16th power cc range. (Author).
It has been almost thirty years since the publication of a book that is entirely dedicated to the theory, description, characterization and measurement of the thermal conductivity of solids. The recent discovery of new materials which possess more complex crystal structures and thus more complicated phonon scattering mechanisms have brought innovative challenges to the theory and experimental understanding of these new materials. With the development of new and novel solid materials and new measurement techniques, this book will serve as a current and extensive resource to the next generation researchers in the field of thermal conductivity. This book is a valuable resource for research groups and special topics courses (8-10 students), for 1st or 2nd year graduate level courses in Thermal Properties of Solids, special topics courses in Thermal Conductivity, Superconductors and Magnetic Materials, and to researchers in Thermoelectrics, Thermal Barrier Materials and Solid State Physics.
Four samples of lead telluride were tested and their thermal conductivity determined over a temperature range of 325 degrees K to 575 degrees K. The cut-bar method was employed and