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The book presents a unified and self-sufficient and reader-friendly introduction to the anisotropic elasticity theory necessary to model a wide range of point, line, planar and volume type crystal defects (e.g., vacancies, dislocations, interfaces, inhomogeneities and inclusions).The necessary elasticity theory is first developed along with basic methods for obtaining solutions. This is followed by a detailed treatment of each defect type. Included are analyses of their elastic fields and energies, their interactions with imposed stresses and image stresses, and the interactions that occur between them, all employing the basic methods introduced earlier.All results are derived in full with intermediate steps shown, and 'it can be shown' is avoided. A particular effort is made to describe and compare different methods of solving important problems. Numerous exercises (with solutions) are provided to strengthen the reader's understanding and extend the immediate text.In the 2nd edition an additional chapter has been added which treats the important topic of the self-forces that are experienced by defects that are extended in more than one dimension. A considerable number of exercises have been added which expand the scope of the book and furnish further insights. Numerous sections of the book have been rewritten to provide additional clarity and scope.The major aim of the book is to provide, in one place, a unique and complete introduction to the anisotropic theory of elasticity for defects written in a manner suitable for both students and professionals.
It is nonnal for the preface to explain the motivation behind the writing of the book. Since many good books dealing with the general theory of crystal defects already exist, a new book has to be especially justified, and here its main justification lies in its treatment of crystal line interfaces. About 1961, the work of the author, essentially based on the fundamental work of Professor F. C. Frank, started to branch away from the main flow of thought in this field and eventually led to a general geometrical theory which is presented as a whole for the first time in this book. Although nearly all that is presented has already been published in different journals and symposia, it might be difficult for the reader to follow that literature, as a new terminology and new methods of analysis had to be developed. Special emphasis is given to discussion and many diagrams are included in order that a clear view of the basic concepts be obtained. Intennediate summaries try to bring out the main points of the chapters. Instead of specific exercises, general suggestions for them are given. The part up to chapter 9 is considered more or less as introductory, so that the book can be studied without specific knowledge of crystals and crystal defects. The presentation of that part developed out of lectures given by the author at the Swiss Federal Institute of Technology (ETH) in Zurich.
This edition has been greatly enlarged and updated to provide both scientists and engineers with a clear and comprehensive understanding of composite materials. In describing both theoretical and practical aspects of their production, properties and usage, the book crosses the borders of many disciplines. Topics covered include: fibres, matrices, laminates and interfaces; elastic deformation, stress and strain, strength, fatigue crack propagation and creep resistance; toughness and thermal properties; fatigue and deterioration under environmental conditions; fabrication and applications. Coverage has been increased to include polymeric, metallic and ceramic matrices and reinforcement in the form of long fibres, short fibres and particles. Designed primarily as a teaching text for final-year undergraduates in materials science and engineering, this book will also interest undergraduates and postgraduates in chemistry, physics, and mechanical engineering. In addition, it will be an excellent source book for academic and technological researchers on materials.
Examines the advances made in the field in recent years and looks at the various methods now used; ideal for graduate students and researchers.
This book contains the proceedings of a NATO Advanced Study Institute entitled "Characterization of Crystal Growth Defects by X-ray Methods' held in the University of Durham, England from 29th August to 10th September 1979. The current interest in electronic materials, in particular silicon, gallium aluminium arsenide, and quartz, and the recent availability of synchrotron radiation for X-ray diffraction studies made this Advanced Study Institute particularly timely. Two main themes ran through the course: 1. A survey of the various types of defect occurring in crystal growth, the mechanism of their different methods of generation and their influence on the properties of relativelY perfect crystals. 2. A detailed and advanced course on the observation and characterization of such defects by X-ray methods. The main emphasis was on X-ray topographic techniques but a substantial amount of time was spent on goniometric techniques such as double crystal diffractometry and gamma ray diffraction. The presentation of material in this book reflects these twin themes. Section A is concerned with defects, Section C with techniques and in linking them. Section B provides a concise account of the basic theory necessary for the interpretation of X-ray topographs and diffractometric data. Although the sequence follows roughly the order of presentation at the Advanced Study Institute certain major changes have been made in order to improve the pedagogy. In particular, the first two chapters provide a vital, and seldom articulated, case for the need for characterization for crystals used in device technologies.
This textbook provides students with a complete working knowledge of the properties of imperfections in crystalline solids. Readers will learn how to apply the fundamental principles of mechanics and thermodynamics to defect properties in materials science, gaining all the knowledge and tools needed to put this into practice in their own research. Beginning with an introduction to defects and a brief review of basic elasticity theory and statistical thermodynamics, the authors go on to guide the reader in a step-by-step way through point, line, and planar defects, with an emphasis on their structural, thermodynamic, and kinetic properties. Numerous end-of-chapter exercises enable students to put their knowledge into practice, and with solutions for instructors and MATLAB® programs available online, this is an essential text for advanced undergraduate and introductory graduate courses in crystal defects, as well as being ideal for self-study.
From its early beginning before the war, the field of semiconductors has developped as a classical example where the standard approximations of 'band theory' can be safely used to study its interesting electronic properties. Thus in these covalent crystals, the electronic structure is only weakly coupled with the atomic vibrations; one-electron Bloch functions can be used and their energy bands can be accurately computed in the neighborhood of the energy gap between the valence and conduction bands; nand p doping can be obtained by introducing substitutional impurities which only introduce shallow donors and acceptors and can be studied by an effective-mass weak-scattering description. Yet, even at the beginning, it was known from luminescence studies that these simple concepts failed to describe the various 'deep levels' introduced near the middle of the energy gap by strong localized imperfections. These imperfections not only include some interstitial and many substitutional atoms, but also 'broken bonds' associated with surfaces and interfaces, dis location cores and 'vacancies', i.e., vacant iattice sites in the crystal. In all these cases, the electronic structure can be strongly correlated with the details of the atomic structure and the atomic motion. Because these 'deep levels' are strongly localised, electron-electron correlations can also playa significant role, and any weak perturbation treatment from the perfect crystal structure obviously fails. Thus, approximate 'strong coupling' techniques must often be used, in line' with a more chemical de scription of bonding.
Provides a thorough understanding of the chemistry and physics of defects, enabling the reader to manipulate them in the engineering of materials. Reinforces theoretical concepts by placing emphasis on real world processes and applications. Includes two kinds of end-of-chapter problems: multiple choice (to test knowledge of terms and principles) and more extensive exercises and calculations (to build skills and understanding). Supplementary material on crystallography and band structure are included in separate appendices.
Although linear elasticity of defects in solids is well established, this textbook introduces the subject in a novel way by comparing key concepts at the atomic scale and at the usual continuum scale, and it explores the relationships between these treatments. There are exercises to work through, with solutions for instructors from the OUP website.