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The report describes an improved method of growing A1 - A12O3 - Pb superconducting tunnel diodes. Since the resistance of the diode is dependent upon the thickness of the oxide layer, this layer must be carefully controlled in order to fabricate diodes of the desired resistance in a reproducible manner. The key to this method is a substrate holder which allows the entire process to be completed under vacuum. (Author).
Miniature electromechanical tunnel diode transducer.
Research was concerned with tunnel di de theory and applications although a considerable portion of the effort was devoted to the related objective of developing a better understanding of the behavior of negative resistance devices in general. The basic theory of the tunnel diode is presented which summarizes most of the known essential elements of tunnel diode theory at the present time. (Author).