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The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research.
This volume provides an extensive overview of radiation effects on integrated circuits, offering major guidelines for coping with radiation effects on components. It contains a set of chapters based on the tutorials presented at the International School on Effects of Radiation on Embedded Systems for Space Applications (SERESSA) that was held in Manaus, Brazil, November 20-25, 2005.
Radiation-induced Soft Errors: A Chip-level Modeling Perspective summarizes and discusses selected publications that enable a truly chip-level radiation-induced soft error rate estimation methodology.
This book provides a comprehensive presentation of the most advanced research results and technological developments enabling understanding, qualifying and mitigating the soft errors effect in advanced electronics, including the fundamental physical mechanisms of radiation induced soft errors, the various steps that lead to a system failure, the modelling and simulation of soft error at various levels (including physical, electrical, netlist, event driven, RTL, and system level modelling and simulation), hardware fault injection, accelerated radiation testing and natural environment testing, soft error oriented test structures, process-level, device-level, cell-level, circuit-level, architectural-level, software level and system level soft error mitigation techniques. The book contains a comprehensive presentation of most recent advances on understanding, qualifying and mitigating the soft error effect in advanced electronic systems, presented by academia and industry experts in reliability, fault tolerance, EDA, processor, SoC and system design, and in particular, experts from industries that have faced the soft error impact in terms of product reliability and related business issues and were in the forefront of the countermeasures taken by these companies at multiple levels in order to mitigate the soft error effects at a cost acceptable for commercial products. In a fast moving field, where the impact on ground level electronics is very recent and its severity is steadily increasing at each new process node, impacting one after another various industry sectors (as an example, the Automotive Electronics Council comes to publish qualification requirements on soft errors), research and technology developments and industrial practices have evolve very fast, outdating the most recent books edited at 2004.
This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level.
Results are presented on the study of radiation effects in bulk CMOS microcircuits, basic logic cells of developmental integrated-injection-logic (I2L) LSI, and optical couplers. Radiation effects considered include the permanent damage effects resulting from neutron displacement damage and total ionizing radiation dose. Transient photoresponse has been measured as a function of ionizing radiation pulse width. CMOS latch-up was investigated as induced by electrical pulsed overstress and/or pulsed ionizing radiation exposure. No significant synergistic effects were observed. (Author).
Ionizing Radiation Effects in Electronics: From Memories to Imagers delivers comprehensive coverage of the effects of ionizing radiation on state-of-the-art semiconductor devices. The book also offers valuable insight into modern radiation-hardening techniques. The text begins by providing important background information on radiation effects, their underlying mechanisms, and the use of Monte Carlo techniques to simulate radiation transport and the effects of radiation on electronics. The book then: Explains the effects of radiation on digital commercial devices, including microprocessors and volatile and nonvolatile memories—static random-access memories (SRAMs), dynamic random-access memories (DRAMs), and Flash memories Examines issues like soft errors, total dose, and displacement damage, together with hardening-by-design solutions for digital circuits, field-programmable gate arrays (FPGAs), and mixed-analog circuits Explores the effects of radiation on fiber optics and imager devices such as complementary metal-oxide-semiconductor (CMOS) sensors and charge-coupled devices (CCDs) Featuring real-world examples, case studies, extensive references, and contributions from leading experts in industry and academia, Ionizing Radiation Effects in Electronics: From Memories to Imagers is suitable both for newcomers who want to become familiar with radiation effects and for radiation experts who are looking for more advanced material or to make effective use of beam time.