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This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A dealt with topics including: epitaxial growth of III-V, II-VI, IV-VI, Si-based structures; selective-area, localized and non-planar epitaxy, shadow-mask epitaxy; bulk and new optoelectronic materials; polymers for optoelectronics. Symposium B dealt with III-V epitaxial layers grown by low temperature molecular beam epitaxy, a subject which has undergone rapid development in the last three years.
Porous silicon is rapidly attracting increasing interest from various fields, including optoelectronics, microelectronics, photonics, medicine, sensor and energy technologies, chemistry, and biosensing. This nanostructured and biodegradable material has a range of unique properties that make it ideal for many applications. This book, the third of a
This work discusses techniques for developing new engineering materials such as elastomers, plastic blends, composites, ceramics and high-temperature alloys. Instrumentation for evaluating their properties and identifying potential end uses are presented.;The book is intended for materials, manufacturing, mechanical, chemical and metallurgical engi
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