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This edition has been greatly enlarged and updated to provide both scientists and engineers with a clear and comprehensive understanding of composite materials. In describing both theoretical and practical aspects of their production, properties and usage, the book crosses the borders of many disciplines. Topics covered include: fibres, matrices, laminates and interfaces; elastic deformation, stress and strain, strength, fatigue crack propagation and creep resistance; toughness and thermal properties; fatigue and deterioration under environmental conditions; fabrication and applications. Coverage has been increased to include polymeric, metallic and ceramic matrices and reinforcement in the form of long fibres, short fibres and particles. Designed primarily as a teaching text for final-year undergraduates in materials science and engineering, this book will also interest undergraduates and postgraduates in chemistry, physics, and mechanical engineering. In addition, it will be an excellent source book for academic and technological researchers on materials.
Fundamental Aspects of Dislocation Interactions: Low-Energy Dislocation Structures III covers the papers presented at a European Research Conference on Plasticity of Materials-Fundamental Aspects of Dislocation Interactions: Low-Energy Dislocation Structures III, held on August 30-September 4, 1992 in Ascona, Switzerland. The book focuses on the processes, technologies, reactions, transformations, and approaches involved in dislocation interactions. The selection first offers information on work softening and Hall-Petch hardening in extruded mechanically alloyed alloys and dynamic origin of dislocation structures in deformed solids. Discussions focus on stress-strain behavior in relation to composition, structure, and annealing; comparison of stress-strain curves with work softening theory; sweeping and trapping mechanism; and model of dipolar wall structure formation. The text then ponders on plastic instabilities and their relation to fracture and dislocation and kink dynamics in f.c.c. metals studied by mechanical spectroscopy. The book takes a look at misfit dislocation generation mechanisms in heterostructures and evolution of dislocation structure on the interfaces associated with diffusionless phase transitions. Discussions focus on dislocation representation of a wall of elastic domains; equation of equilibrium of an elastic domain; transformation of dislocations; and theoretical and experimental background. The selection is a valuable reference for readers interested in dislocation interactions.
Mechanical spectroscopy is a non-desctructive technique that is very well suited for studying the dynamics of singularities such as structural defects in solids. It has been successfully applied in solid state physics and materials science for more than 50 years, and in this textbook aims at summarizing the state-of-the-art in this field by presenting results obtained by Western European laboratories. spectroscopy (Ch. 1) is basedon a complete description of elastic, viscoelastic, and viscoplastic behaviour of solids. The anelastic response is analyzed from three different veiwpoints: phenomenology, rheology and thermodynamics. defect dimensionality: point defects (Ch. 2) one-dimensional defects, such as dislocations (Ch. 3), two-dimensional defects, such as grain boundaries (Ch. 4) or the surface of domains (Ch 6). Mechanical losses associated with phase transitions are presented in chapter 5, and relaxation in non-crystalline materials in chapter 7. as thin-layers, localized surface properties, stress relazation in composites, fatigue and the development of high-damping materials, are described, with examples, in chapter 8. Chapter 9 covers classical, and new, techniques for measuring internal friction or ultrasonic attenuation in solids, from macro- down to nanoscale.
This book provides a comprehensive understanding of the nucleation, motion, and interaction between crystalline defects called dislocations.
Dislocations and Plastic Deformation deals with dislocations and plastic deformation, and specifically discusses topics ranging from deformation of single crystals and dislocations in the lattice to the fundamentals of the continuum theory, the properties of point defects in crystals, multiplication of dislocations, and partial dislocations. The effect of lattice defects on the physical properties of metals is also considered. Comprised of nine chapters, this book begins by providing a short and, where possible, precise explanation of dislocation theory. The first six chapters discuss the properties of dislocations and point defects both in crystals and in an elastic continuum. The reader is then introduced to some applications of dislocation theory that show, for instance, the difficulties involved in understanding the hardening of alloys and the work-hardening of pure metals. This book concludes by analyzing the effect of heat treatment on the defect structure in metals. This text will be of interest to students and practitioners in the field of physics.
Provides a thorough understanding of the chemistry and physics of defects, enabling the reader to manipulate them in the engineering of materials. Reinforces theoretical concepts by placing emphasis on real world processes and applications. Includes two kinds of end-of-chapter problems: multiple choice (to test knowledge of terms and principles) and more extensive exercises and calculations (to build skills and understanding). Supplementary material on crystallography and band structure are included in separate appendices.
One of the first books to cover advanced silicon-based technologies, Advanced Silicon and Semiconducting Silicon Alloy-Based Materials and Devices presents important directions for research into silicon, its alloy-based semiconducting devices, and its development in commercial applications. The first section deals with single/mono crystalline silicon, focusing on the effects of heavy doping; the structure and electronic properties of defects and their impact on devices; the MBE of silicon, silicon alloys, and metals; CVD techniques for silicon and silicon germanium; the material properties of silicon germanium strained layers; silicon germanium heterojunction bipolar applications; FETs, IR detectors, and resonant tunneling devices in silicon, silicon germanium, and d-doped silicon; and the fascinating properties of crystalline silicon carbide and its applications. The second section explores polycrystalline silicon. It examines large grain polysilicon substrates for solar cells; the properties, analysis, and modeling of polysilicon TFTs; the technology of polysilicon TFTs in LCD displays; and the use of polycrystalline silicon and its alloys in VLSI applications. With contributors from leading academic and industrial research centers, this book provides wide coverage of fabrication techniques, material properties, and device applications.
It is nonnal for the preface to explain the motivation behind the writing of the book. Since many good books dealing with the general theory of crystal defects already exist, a new book has to be especially justified, and here its main justification lies in its treatment of crystal line interfaces. About 1961, the work of the author, essentially based on the fundamental work of Professor F. C. Frank, started to branch away from the main flow of thought in this field and eventually led to a general geometrical theory which is presented as a whole for the first time in this book. Although nearly all that is presented has already been published in different journals and symposia, it might be difficult for the reader to follow that literature, as a new terminology and new methods of analysis had to be developed. Special emphasis is given to discussion and many diagrams are included in order that a clear view of the basic concepts be obtained. Intennediate summaries try to bring out the main points of the chapters. Instead of specific exercises, general suggestions for them are given. The part up to chapter 9 is considered more or less as introductory, so that the book can be studied without specific knowledge of crystals and crystal defects. The presentation of that part developed out of lectures given by the author at the Swiss Federal Institute of Technology (ETH) in Zurich.