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Carbon nano tubes (CNT) are the main parts of the electronic devices. Due to high carrier mobility, these devices have very high speed. CNT has a wide range of application in making sensors which can detect different types of diseases, materials, viruses and bacteria.
“Neutrosophic Sets and Systems” has been created for publications on advanced studies in neutrosophy, neutrosophic set, neutrosophic logic, neutrosophic probability, neutrosophic statistics that started in 1995 and their applications in any field, such as the neutrosophic structures developed in algebra, geometry, topology, etc. In this issue: On Neutrosophic Crisp Sets and Neutrosophic Crisp Mathematical Morphology, New Results on Pythagorean Neutrosophic Open Sets in Pythagorean Neutrosophic Topological Spaces, Comparative Mathematical Model for Predicting of Financial Loans Default using Altman Z-Score and Neutrosophic AHP Methods.
Papers on neutrosophic statistics, neutrosophic probability, plithogenic set, paradoxism, neutrosophic set, NeutroAlgebra, etc. and their applications.
Possibly the most impactful material in the nanotechnology arena, carbon nanotubes have spurred a tremendous amount of scientific research and development. Their superior mechanical and chemical robustness makes them easily manipulable and allows for the assembly of various types of devices, including electronic, electromechanical, opto-electronic and sensing devices.In the field of nanotube devices, however, concepts that describe the properties of conventional devices do not apply. Carbon nanotube devices behave much differently from those using traditional materials, and offer entirely new functionality. This book – designed for researchers, engineers and graduate students alike – bridges the experimental and theoretical aspects of carbon nanotube devices. It emphasizes and explains the underlying physics that govern their working principles, including applications in electronics, nanoelectromechanical systems, field emission, optoelectronics and sensing. Other topics include: electrical contacts, p-n junctions, transistors, ballistic transport, field emission, oscillators, rotational actuators, electron-phonon scattering, photoconductivity, and light emission. Many of the aspects discussed here differ significantly from those learned in books or traditional materials, and are essential for the future development of carbon nanotube technology.• Bridges experimental and theoretical aspects of carbon nanotube devices, focusing on the underlying physics that govern their working principles • Explains applications in electronics, nanoelectromechanical systems, field emission, optoelectronics and sensing. • Other topics include: electrical contacts, p-n junctions, transistors, ballistic transport, field emission, oscillators, rotational actuators, electron-phonon scattering, photoconductivity, and light emission. • Covers aspects that significantly differ from those learned in traditional materials, yet are essential for future advancement of carbon nanotube technology.* Bridges experimental and theoretical aspects of carbon nanotube devices, focusing on the underlying physics that govern their working principles * Explains applications in electronics, nanoelectromechanical systems, field emission, optoelectronics and sensing.* Other topics include: electrical contacts, p-n junctions, transistors, ballistic transport, field emission, oscillators, rotational actuators, electron-phonon scattering, photoconductivity, and light emission* Covers aspects that significantly differ from those learned in traditional materials, yet are essential for future advancement of carbon nanotube technology.
Physics of Semiconductor Devices covers both basic classic topics such as energy band theory and the gradual-channel model of the MOSFET as well as advanced concepts and devices such as MOSFET short-channel effects, low-dimensional devices and single-electron transistors. Concepts are introduced to the reader in a simple way, often using comparisons to everyday-life experiences such as simple fluid mechanics. They are then explained in depth and mathematical developments are fully described. Physics of Semiconductor Devices contains a list of problems that can be used as homework assignments or can be solved in class to exemplify the theory. Many of these problems make use of Matlab and are aimed at illustrating theoretical concepts in a graphical manner.
This paper includes basics operator’s like union, intersection, complement, subset, null set, equal set etc., of Neutrosophic Hypersoft set (NHSS). The validity and the implementation are presented along with suitable examples. For more precision and accuracy, in future, proposed operations will play a vital role is decision-makings like personal selection, management problems and many others.
The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, "bottom-up approach" that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits.
This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.
With recent advancements in electronics, specifically nanoscale devices, new technologies are being implemented to improve the properties of automated systems. However, conventional materials are failing due to limited mobility, high leakage currents, and power dissipation. To mitigate these challenges, alternative resources are required to advance electronics further into the nanoscale domain. Carbon nanotube field-effect transistors are a potential solution yet lack the information and research to be properly utilized. Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET) is a collection of innovative research on the methods and applications of converting semiconductor devices from micron technology to nanotechnology. The book provides readers with an updated status on existing CNTs, CNTFETs, and their applications and examines practical applications to minimize short channel effects and power dissipation in nanoscale devices and circuits. While highlighting topics including interconnects, digital circuits, and single-wall CNTs, this book is ideally designed for electrical engineers, electronics engineers, students, researchers, academicians, industry professionals, and practitioners working in nanoscience, nanotechnology, applied physics, and electrical and electronics engineering.