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In the quest to mitigate the buildup of greenhouse gases in Earth's atmosphere, researchers and policymakers have increasingly turned their attention to techniques for capturing greenhouse gases such as carbon dioxide and methane, either from the locations where they are emitted or directly from the atmosphere. Once captured, these gases can be stored or put to use. While both carbon storage and carbon utilization have costs, utilization offers the opportunity to recover some of the cost and even generate economic value. While current carbon utilization projects operate at a relatively small scale, some estimates suggest the market for waste carbon-derived products could grow to hundreds of billions of dollars within a few decades, utilizing several thousand teragrams of waste carbon gases per year. Gaseous Carbon Waste Streams Utilization: Status and Research Needs assesses research and development needs relevant to understanding and improving the commercial viability of waste carbon utilization technologies and defines a research agenda to address key challenges. The report is intended to help inform decision making surrounding the development and deployment of waste carbon utilization technologies under a variety of circumstances, whether motivated by a goal to improve processes for making carbon-based products, to generate revenue, or to achieve environmental goals.
As the failure temperature for 5 nm iridium barrier was 400 °C, the addition of TaN layer strongly improved the barrier performance. The utilization of Pd as a catalyst for Cu electroless deposition along with TaN to form a bilayer barrier was also investigated. The Pd/TaN bilayer structure was shown to prevent copper diffusion up to 550 °C for 1 h. Ternary refractory metal nitride W-B-N thin films were also studied as a candidate diffusion barrier for Cu metallization on Si. W-B-N thin films were amorphous with low resistivity ranging from 159.92 to 240.4 [mu][Omega]cm. The W-B-N thin films deposited at 5 % N2 flow ratio can block Cu diffusion after 500 °C annealing for 1 h. As one of the interesting refractory metal nitrides for Cu diffusion barrier application, the comparative study between ZrN and Zr-Ge-N thin films as diffusion barriers was also examined.