Download Free Strained Layer Quantum Wells And Their Applications Book in PDF and EPUB Free Download. You can read online Strained Layer Quantum Wells And Their Applications and write the review.

Semiconductor devices based on lattice mismatched heterostructures have been the subject of much study. This volume focuses on the physics, technology and applications of strained layer quantum wells and superlattices, featuring chapters on aspects ranging from theoretical modeling of quantum-well lasers to materials characterization and assessment by the most prominent researchers in the field. It is an essential reference for both researchers and students of semiconductor lasers, sensors and communications.
This book provides the information necessary for the reader to achieve a thorough understanding of all aspects of QW lasers - from the basic mechanism of optical gain, through the current technolgoical state of the art, to the future technologies of quantum wires and quantum dots. In view of the growing importance of QW lasers, this book should be read by all those with an active interest in laser science and technology, from the advanced student to the experienced laser scientist.* The first comprehensive book-length treatment of quantum well lasers* Provides a detailed treatment of quantum well laser basics* Covers strained quantum well lasers* Explores the different state-of-the-art quantum well laser types* Provides key information on future laser technologies
The following blurb to be used for the AP Report and ATI only as both volumes will not appear together there.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this volume offers a comprehensive discussion of strained-layer superlattices and focuses on fabrication technology and applications of the material. This volume combines with Volume 32, Strained-Layer Superlattices: Physics, in this series to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.****The following previously approved blurb is to be used in all other direct mail and advertising as both volumes will be promoted together.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this two-volume survey offers a comprehensive discussion of the physics of strained-layer superlattices (Volume 32), as well as detailing fabrication technology and applications of the material (Volume 33). Although each volume is edited to stand alone, the two books combine to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.
This book offers a thorough survey of long wavelength infrared semiconductor emitters based primarily on quantum wells and superlattices. Featuring contributions from the most prominent researchers in the field, this volume allows readers to compare different types of lasers as well as examine investigations of potential far-infrared/terrahertz sources. This is an essential reference for researchers, engineers and graduate students who wish to obtain comprehensive knowledge about infrared semiconductor sources and recent developments in this field.
Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.
Now in its second edition, this updated, combined volume provides a survey of GaInAsP-InP and GaInAsP-GaAs related materials for electronic and photonic device applications. It begins with an introduction to semiconductor compounds and the MOCVD growth process. It then discusses in situ and ex situ characterization techniques for MOCVD growth. Next, the book examines the specifics of the growth of GaAs and the growth and characterization of the GaAs-GaInP system. It describes optical devices based on GaAs and related compounds and details the specifics of GaAs-based laser diode structures. It also discusses electronic devices and provides an overview of optoelectronic integrated circuits (OEICs). It then reviews InP-InP and GaInAs(P)-InP MO
In recent years, extensive work has been done on strain, dislocations and mechanical properties of strained layers. Although it is not possible to describe all this work in a monograph of this size, Compound Semiconductors Strained Layers and Devices provides an overview with sufficient detail to cover all the essential aspects of recent developments in the field. The book concentrates on compound semiconductors with emphasis on wideband gap II-VI and III-Nitride semiconductors. GeSi strained layers are discussed for comparison to clarify the underlying physics. The effects of strain on band structure, transport, and optical properties of both the zinc blende and the wurtzite compound semiconductors are discussed, as are Piezoelectric Effects and Quantum Confined Stark Effects. Magnetic polarons in diluted II-VI magnetic polarons are also covered. Among the applications, blue and green LEDs and LDs and mid-IR LDs are included. A whole chapter is devoted to these devices. Another chapter examines transistors based on conventional III-V, II-VI and III-nitride semiconductors. The subject matter is treated at a level appropriate for students and senior researchers interested in material science, and in designing and modeling semiconductor devices. It will also be useful to engineers and material scientists concerned with the effects of strain on the mechanical properties of crystalline layers of any material.
This volume presents key papers published in recent years dealing with silicon-germanium strained layers and their applications.Papers are presented in three groups, dealing with growth and mechanical properties of strained layers, electronic and optical properties, and applications, notably in novel diode and transistor designs and high performance optical detectors. The collected papers will be an ideal source for new researchers who need quick and easy access to an authoritative selection of high quality papers. An important aspect of the selection is the cross-disciplinary nature of the papers, presenting material from electronic engineers as well as from physicists and materials scientists. An extensive bibliography gives details of a further 250 papers on the subject.
This comprehensive handbook gives a fully updated guide to lasers and laser systems, including the complete range of their technical applications. The first volume outlines the fundamental components of lasers, their properties and working principles. The second volume gives exhaustive coverage of all major categories of lasers, from solid-state and semiconductor diode to fiber, waveguide, gas, chemical, and dye lasers. The third volume covers modern applications in engineering and technology, including all new and updated case studies spanning telecommunications and data storage to medicine, optical measurement, defense and security, nanomaterials processing and characterization.
The invention of the laser was one of the towering achievements of the twentieth century. At the opening of the twenty-first century we are witnessing the burgeoning of the myriad technical innovations to which that invention has led. The Handbook of Laser Technology and Applications is a practical and long-lasting reference source for scientists and engineers who work with lasers. The Handbook provides, a comprehensive guide to the current status of lasers and laser systems; it is accessible to science or engineering graduates needing no more than standard undergraduate knowledge of optics. Whilst being a self-contained reference work, the Handbook provides extensive references to contemporary work, and is a basis for studying the professional journal literature on the subject. It covers applications through detailed case studies, and is therefore well suited to readers who wish to use it to solve specific problems of their own. The first of the three volumes comprises an introduction to the basic scientific principles of lasers, laser beams and non-linear optics. The second volume describes the mechanisms and operating characteristics of specific types of laser including crystalline solid - state lasers, semiconductor diode lasers, fibre lasers, gas lasers, chemical lasers, dye lasers and many others as well as detailing the optical and electronic components which tailor the laser's performance and beam delivery systems. The third volume is devoted to case studies of applications in a wide range of subjects including materials processing, optical measurement techniques, medicine, telecommunications, data storage, spectroscopy, earth sciences and astronomy, and plasma fusion research. This vast compendium of knowledge on laser science and technology is the work of over 130 international experts, many of whom are recognised as the world leaders in their respective fields. Whether the reader is engaged in the science, technology, industrial or medical applications of lasers or is researching the subject as a manager or investor in technical enterprises they cannot fail to be informed and enlightened by the wide range of information the Handbook supplies.