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This thesis is concerned with establishing a rigorous, modern theory of the stochastic and dissipative forces on crystal defects, which remain poorly understood despite their importance in any temperature dependent micro-structural process such as the ductile to brittle transition or irradiation damage. The author first uses novel molecular dynamics simulations to parameterise an efficient, stochastic and discrete dislocation model that allows access to experimental time and length scales. Simulated trajectories are in excellent agreement with experiment. The author also applies modern methods of multiscale analysis to extract novel bounds on the transport properties of these many body systems. Despite their successes in coarse graining, existing theories are found unable to explain stochastic defect dynamics. To resolve this, the author defines crystal defects through projection operators, without any recourse to elasticity. By rigorous dimensional reduction, explicit analytical forms are derived for the stochastic forces acting on crystal defects, allowing new quantitative insight into the role of thermal fluctuations in crystal plasticity.
Examines the advances made in the field in recent years and looks at the various methods now used; ideal for graduate students and researchers.
Dislocations in solids are peculiar among numerous defects in the crystal lattice. From the viewpoint of dimensionality, dislocation represents one-dimensional defect, translationally invariant along its axis. Physically, it is a topological defect, i.e. a fictitious formation violating the lattice symmetry. As a result, dislocations have a significant effect on various electric and optical characteristics of metals, as well as semiconductors. This book reviews the state of experiment and theory concerning the principal mechanisms of dislocational motion. Depending on the value of applied load, dislocation dynamics is considered in the Peierls potential relief, random field of point defects, or under interaction with free electrons.
This book describes behavior of crystalline solids primarily via methods of modern continuum mechanics. Emphasis is given to geometrically nonlinear descriptions, i.e., finite deformations. Primary topics include anisotropic crystal elasticity, plasticity, and methods for representing effects of defects in the solid on the material's mechanical response. Defects include crystal dislocations, point defects, twins, voids or pores, and micro-cracks. Thermoelastic, dielectric, and piezoelectric behaviors are addressed. Traditional and higher-order gradient theories of mechanical behavior of crystalline solids are discussed. Differential-geometric representations of kinematics of finite deformations and lattice defect distributions are presented. Multi-scale modeling concepts are described in the context of elastic and plastic material behavior. Representative substances towards which modeling techniques may be applied are single- and poly- crystalline metals and alloys, ceramics, and minerals. This book is intended for use by scientists and engineers involved in advanced constitutive modeling of nonlinear mechanical behavior of solid crystalline materials. Knowledge of fundamentals of continuum mechanics and tensor calculus is a prerequisite for accessing much of the text. This book could be used as supplemental material for graduate courses on continuum mechanics, elasticity, plasticity, micromechanics, or dislocation mechanics, for students in various disciplines of engineering, materials science, applied mathematics, and condensed matter physics.
An accessible textbook providing students with a working knowledge of the properties of defects in crystals, in a step-by-step tutorial style.
The study of defects and disorder in solids remains a central topic in solid state science. Developments in the field continue to be promoted by new experimental and theoretical techniques, while further impetus for the study of disorder in solids is provided by the growing range of applications of solid state materials in which disorder at the atomic level plays a crucial rOle. In this book we attempt to present a survey of fundamental and applied aspects of the field. We consider the basic aspects of defective crystalline and amorphous solids. We discuss recent studies of structural, electronic, transport, thermodynamic and spectroscopic properties of such materials. Experimental and theoretical methodologies are reviewed, and detailed consideration is given to materials such as fast ion conductors and amorphous semiconductors that are of importance in an applied context. Any survey of this large field is necessarily selective. We have chosen to emphasise insulating (especially oxidic) and semi-conducting materials. But many of the approaches and techniques we describe apply generally across the entire field of solid state science. This volume is based on a NATO ASI held at the Residencia Santa Teresa de Jesus, Madrid in September 1991. The Editor is grateful to the NATO Scientific Affairs Division for their sponsorship of this School. Thanks are also due to all who participated in and lectured at the school, but especially to the organising committee of A. V. Chadwick, G. N. Greaves, M. Grigorkiewicz, J. H. Harding and S. Kalbitzer. C. R. A.
The classic book that presents a unified approach to crystallography and the defects found within crystals, revised and updated This new edition of Crystallography and Crystal Defects explains the modern concepts of crystallography in a clear, succinct manner and shows how to apply these concepts in the analyses of point, line and planar defects in crystalline materials. Fully revised and updated, this book now includes: Original source references to key crystallographic terms familiar to materials scientists Expanded discussion on the elasticity of cubic materials New content on texture that contains more detail on Euler angles, orientation distribution functions and an expanded discussion on examples of textures in engineering materials Additional content on dislocations in materials of symmetry lower than cubic An expanded discussion of twinning which includes the description and classification of growth twins The inclusion and explanation of results from atomistic modelling of twin boundaries Problem sets with new questions, detailed worked solutions, supplementary lecture material and online computer programs for crystallographic calculations. Written by authors with extensive lecturing experience at undergraduate level, Crystallography and Crystal Defects, Third Edition continues to take its place as the core text on the topic and provides the essential resource for students and researchers in metallurgy, materials science, physics, chemistry, electrical, civil and mechanical engineering.