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The papers in this issue of ECS Transactions will address recent developments in inorganic compound and wide bandgap semiconductor technology. The following areas are of particular interest: bulk and epitaxial growth technologies; device processing; electronic, optoelectronic, and sensor devices; dielectric properties and passivation; bonding and packaging; process monitoring; characterization and testing; process-induced defects; reliability and device degradation.
The papers included in this issue of ECS Transactions were originally presented in the symposium ¿State-of-the-Art Program on Compound Semiconductors 52 (SOTAPOCS 52)¿, held during the 218th meeting of The Electrochemical Society, in Las Vegas, Nevada from October 10 to 15, 2010.
Section 1 addresses the most recent developments in processes at the semiconductor-solution interface include etching, oxidation, passivation, film growth, porous semiconductor formation, electrochemical, photoelectrochemical, electroluminescence and photoluminescence processes, electroanalytical measurements and related topics on both elemental and compound semiconductors. Section 2 addresses the most recent developments in compound semiconductors encompassing advanced devices, materials growth, characterization, processing, device fabrication, reliability, and related topics.