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The essentials of analog circuit design with a unique all-region MOSFET modeling approach.
This comprehensive compendium describes the basic modeling techniques for silicon-based semiconductor devices, introduces the basic concepts of silicon-based passive and active devices, and provides its state-of-the-art modeling and equivalent circuit parameter extraction methods.The unique reference text benefits practicing engineers, technicians, senior undergraduate and first-year graduate students working in the areas of RF, microwave and solid-state device, and integrated circuit design.
A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations. The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.
Bridges the gap between device modelling and analog circuit design. Includes dedicated software enabling actual circuit design. Covers the three significant models: BSIM3, Model 9 &, and EKV. Presents practical guidance on device development and circuit implementation. The authors offer a combination of extensive academic and industrial experience.
BSIM-Bulk MOSFET Model for IC Design - Digital, Analog, RF and High-Voltage provides in-depth knowledge of the internal operation of the model. The authors not only discuss the fundamental core of the model, but also provide details of the recent developments and new real-device effect models. In addition, the book covers the parameter extraction procedures, addressing geometrical scaling, temperatures, and more. There is also a dedicated chapter on extensive quality testing procedures and experimental results. This book discusses every aspect of the model in detail, and hence will be of significant use for the industry and academia. Those working in the semiconductor industry often run into a variety of problems like model non-convergence or non-physical simulation results. This is largely due to a limited understanding of the internal operations of the model as literature and technical manuals are insufficient. This also creates huge difficulty in developing their own IP models. Similarly, circuit designers and researcher across the globe need to know new features available to them so that the circuits can be more efficiently designed. - Reviews the latest advances in fabrication methods for metal chalcogenide-based biosensors - Discusses the parameters of biosensor devices to aid in materials selection - Provides readers with a look at the chemical and physical properties of reactive metals, noble metals, transition metals chalcogenides and their connection to biosensor device performance
This volume of Analog Circuit Design concentrates on three topics: (X)DSL and other communication systems; RF MOST models; and integrated filters and oscillators. The book comprises five chapters on the first topic with six each on the other two, all written by internationally recognized experts. They are tutorial in nature and together make a substantial contribution to improving the design of analog circuits. The book is divided into three parts: Part I: (X)DSL and other Communication Systems presents some examples of recent improved modem techniques which have resulted in much higher transmission speeds over the local telephone network. It also presents components for the implementation of different standards. Part II: RF MOST Models investigates the state of the art in RF MOST models. It compares the existing BSIM3v3, Philips' Model 9 and the EKV model with respect to their capability to accurately predict GHz performance with submicron CMOST technologies. It shows how it has now become quite feasible to model a MOST at very high frequencies, giving rise to an increased use of MOST technologies in RF applications. Part III: Integrated Filters and Oscillators illustrates how the increasing use of communication tools goes hand-in-hand with the design of analog filters and oscillators with greater flexibility and higher bandwidth.
Practicing designers, students, and educators in the semiconductor field face an ever expanding portfolio of MOSFET models. In Compact MOSFET Models for VLSI Design , A.B. Bhattacharyya presents a unified perspective on the topic, allowing the practitioner to view and interpret device phenomena concurrently using different modeling strategies. Readers will learn to link device physics with model parameters, helping to close the gap between device understanding and its use for optimal circuit performance. Bhattacharyya also lays bare the core physical concepts that will drive the future of VLSI development, allowing readers to stay ahead of the curve, despite the relentless evolution of new models. Adopts a unified approach to guide students through the confusing array of MOSFET models Links MOS physics to device models to prepare practitioners for real-world design activities Helps fabless designers bridge the gap with off-site foundries Features rich coverage of: quantum mechanical related phenomena Si-Ge strained-Silicon substrate non-classical structures such as Double Gate MOSFETs Presents topics that will prepare readers for long-term developments in the field Includes solutions in every chapter Can be tailored for use among students and professionals of many levels Comes with MATLAB code downloads for independent practice and advanced study This book is essential for students specializing in VLSI Design and indispensible for design professionals in the microelectronics and VLSI industries. Written to serve a number of experience levels, it can be used either as a course textbook or practitioner’s reference. Access the MATLAB code, solution manual, and lecture materials at the companion website: www.wiley.com/go/bhattacharyya
This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. Particular emphasis is placed on how the BSIM model evolved into the first ever industry standard SPICE MOSFET model for circuit simulation and CMOS technology development. The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model. Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.
The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.
Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. It is helpful to experts and students alike.