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Single Crystal Growth of Semiconductors from Metallic Solutions covers the four principal growth techniques currently in use for the growth of semiconductor single crystals from metallic solutions. Providing an in-depth review of the state-of-the-art of each, both experimentally and by numerical simulations. The importance of a close interaction between the numerical and experimental aspects of the processes is also emphasized. Advances in the fields of electronics and opto-electronics are hampered by the limited number of substrate materials which can be readily produced by melt-growth techniques such as the Czochralski and Bridgman methods. This can be alleviated by the use of alternative growth techniques, and in particular, growth from metallic solutions. The principal techniques currently in use are: Liquid Phase Epitaxy; Liquid Phase Electroepitaxy; the Travelling Heater Method, and; Liquid Phase Diffusion. Single Crystal Growth of Semiconductors from Metallic Solutions will serve as a valuable reference tool for researchers, and graduate and senior undergraduate students in the field of crystal growth. It covers most of the models developed in recent years. The detailed development of basic and constitutive equations and the associated interface and boundary conditions given for each technique will be very valuable to researchers for the development of their new models.* Describes the fundamentals of crystal growth modelling* Providing a state-of-the art description of the mathematical and experimental growth processes * Allows reader to gain clear insight into the practical and mathematical aspects of the topic
Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE. This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and silicon carbide, and a wide range of oxides/fluorides (including sapphire and quartz) that are used in many industrial applications. A separate chapter is devoted to the fascinating field of growth in various forms of microgravity, an activity that is approximately 30-years old and which has revealed many interesting features, some of which have been very surprising to experimenters and theoreticians alike. Covers the most important materials within the field The contributors come from a wide variety of countries and include both academics and industrialists, to give a balanced treatment Builds-on an established series known in the community Highly pertinent to current and future developments in telecommunications and computer-processing industries.
​ This book will serve as the definitive source of detailed information on radiation, ionization, and detection in nuclear medicine. It opens by considering fundamental aspects of nuclear radiation, including dose and energy, sources, and shielding. Subsequent chapters cover the full range of relevant topics, including the detection and measurement of radiation exposure (with detailed information on mathematical modelling); medical imaging; the different types of radiation detector and their working principles; basic principles of and experimental techniques for deposition of scintillating materials; device fabrication; the optical and electrical behaviors of radiation detectors; and the instrumentation used in nuclear medicine and its application. The book will be an invaluable source of information for academia, industry, practitioners, and researchers.
This book is the 2nd special volume dedicated to the memory of Gérard Maugin. Over 30 leading scientists present their contribution to reflect the vast field of scientific activity of Gérard Maugin. The topics of contributions employing often non-standard methods (generalized model) in this volume show the wide range of subjects that were covered by this exceptional scientific leader. The topics range from micromechanical basics to engineering applications, focusing on new models and applications of well-known models to new problems. They include micro-macro aspects, computational efforts, possibilities to identify the constitutive equations, and old problems with incorrect or non-satisfying solutions based on the classical continua assumptions.
Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds have become a key component of the arsenal in improving semiconductor performance. This issue of ECS Transactions discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.
Springer-Verlag, Berlin Heidelberg, in conjunction with Springer-Verlag New York, is pleased to announce a new series: CRYSTALS Growth, Properties, and Applications The series presents critical reviews of recent developments in the field of crystal growth, properties, and applications. A substantial portion of the new series will be devoted to the theory, mechanisms, and techniques of crystal growth. Occasionally, clear, concise, complete, and tested instructions for growing crystals will be published, particularly in the case of methods and procedures that promise to have general applicability. Responding to the ever-increasing need for crystal substances in research and industry, appropriate space will be devoted to methods of crystal characterization and analysis in the broadest sense, even though reproducible results may be expected only when structures, microstructures, and composition are really known. Relations among procedures, properties, and the morphology of crystals will also be treated with reference to specific aspects of their practical application. In this way the series will bridge the gaps between the needs of research and industry, the pos sibilities and limitations of crystal growth, and the properties of crystals. Reports on the broad spectrum of new applications - in electronics, laser tech nology, and nonlinear optics, to name only a few - will be of interest not only to industry and technology, but to wider areas of applied physics as well and to solid state physics in particular. In response to the growing interest in and importance of organic crystals and polymers, they will also be treated.
Almost thirty years after the remarkable monograph of K. Zanio and the numerous conferences and articles dedicated since that time to CdTe and CdZnTe, after all the significant progresses in that field and the increasing interest in these materials for several extremely attractive industrial applications, such as nuclear detectors and solar cells, the edition of a new enriched and updated monograph dedicated to these two very topical II-VI semiconductor compounds, covering all their most prominent, modern and fundamental aspects, seemed very relevant and useful. - Detailed coverage of the main topics associated with the very topical II-VI semiconductor compound CdTe and its alloy CZT - Review of the CdTe recent developments - Fundamental background of many topics clearly introduced and exposed
High Performance Computing Systems and Applications contains a selection of fully refereed papers presented at the 14th International Conference on High Performance Computing Systems and Applications held in Victoria, Canada, in June 2000. This book presents the latest research in HPC Systems and Applications, including distributed systems and architecture, numerical methods and simulation, network algorithms and protocols, computer architecture, distributed memory, and parallel algorithms. It also covers such topics as applications in astrophysics and space physics, cluster computing, numerical simulations for fluid dynamics, electromagnetics and crystal growth, networks and the Grid, and biology and Monte Carlo techniques. High Performance Computing Systems and Applications is suitable as a secondary text for graduate level courses, and as a reference for researchers and practitioners in industry.
Physicochemical Hydrodynamics: The Role of Convection and Fluid Flow in Solidification and Crystal Growth focuses on the processes, methodologies, reactions, and approaches involved in solidification and crystal growth brought about by convection and fluid flow. The selection first offers information on the techniques of crystal growth, convection in Czochralski growth melts, and Marangoni effects in crystal growth melts. Discussions focus on crystal growth under reduced gravity, Marangoni effects in growth from a crucible, thermocapillary convection in floating zones, near-field flow, Czochralski bulk flow, and melt, solution, and vapor growth. The text then examines the effect of convective flow on morphological stability and time-dependent natural convection in crystal growth systems. The manuscript elaborates on the effects of fluid flow on the solidification of industrial castings and ingots and application of holographic interferometry to hydrodynamic phenomena in crystal growth. Topics include effects of fluid flow on crystal structure, importance of macrosegregation defects in castings, value of convection in crystal growth, and occurrence of thermal oscillations in fluids. The selection is a dependable reference for readers interested in the role of convection and fluid flow in solidification and crystal growth.